Chalcogenide MOCVD System with In situ Optical Characterization (MOCVD 2)

    Equipment/facility: Equipment

      Description

      A second Chalcogenide Metal Organic Chemical Vapor Deposition (MOCVD 2) instrument with the capabilities for in situ optical characterization is expected to be installed during the summer of 2018. In-situ optical characterization will enable on-the-fly modifications to the growth process for the desired layer composition. It would also provide a powerful tool to probe the growth mechanism of the layered chalcogenides. The additional analysis chamber with Raman and PL aids in characterizing these sensitive materials in a controlled ambient.

      Capabilities:
      8 bubbler stations and 4 gas sources including H2Se and H2S
      In situ spectroscopic ellipsometery
      Separate analysis chamber for Raman and Photoluminescence analysis
      Wide range of growth temperatures (200-1000°C) and reactor pressures (50-700 Torr)
      Current Process Capabilities:
      WS2, WSe2, MoS2, MoSe2, NbS2, NbSe2, including various doped, alloys and heterostructures of these compounds

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      Metallorganic chemical vapor deposition
      Organic Chemicals
      Chalcogenides
      Spectroscopic analysis
      Growth temperature
      Heterojunctions
      Chemical vapor deposition
      Photoluminescence
      Gases
      Metals
      Chemical analysis