• 1587 Citations
  • 24 h-Index
1993 …2019
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Research Output 1993 2019

2019
1 Citation (Scopus)

Theory of photo-ionization defects in nano-porous SiC alloys

Tuttle, B. R., Summers, T., Barger, C., Noonan, J. & Pantelides, S. T., Jun 7 2019, In : Journal of Applied Physics. 125, 21, 215703.

Research output: Contribution to journalArticle

Open Access
porous silicon
silicon carbides
photoionization
defects
carbon
2018
4 Citations (Scopus)

Dangling bond defects in SiC: An ab initio study

Tuttle, B. R., Jan 10 2018, In : Physical Review B. 97, 4, 045203.

Research output: Contribution to journalArticle

Dangling bonds
Defects
defects
Vacancies
Hydrogen
5 Citations (Scopus)

Radiation-Induced Charge Trapping and Low-Frequency Noise of Graphene Transistors

Wang, P., Perini, C., O'Hara, A., Tuttle, B. R., Zhang, E. X., Gong, H., Dong, L., Liang, C., Jiang, R., Liao, W., Fleetwood, D. M., Schrimpf, R. D., Vogel, E. M. & Pantelides, S. T., Jan 1 2018, In : IEEE Transactions on Nuclear Science. 65, 1, p. 156-163 8 p., 8063913.

Research output: Contribution to journalArticle

Charge trapping
graphene
transistors
trapping
Irradiation
2017
3 Citations (Scopus)

Computational predictions for single chain chalcogenide-based one-dimensional materials

Tuttle, B., Alhassan, S. & Pantelides, S., May 17 2017, In : Nanomaterials. 7, 5, 115.

Research output: Contribution to journalArticle

Chalcogens
Quantum confinement
Silicon
Binding energy
Sulfur
1 Citation (Scopus)

Properties of hydrogenated Nanoporous SiC: An Ab initio study

Tuttle, B. R., Held, N. J., Lam, L. H., Zhang, Y. Y. & Pantelides, S. T., Jan 1 2017, In : Journal of Nanomaterials. 2017, 4705734.

Research output: Contribution to journalArticle

Permittivity
Silicon carbide
Density (specific gravity)
Pore size
Hydrogen
3 Citations (Scopus)

The properties of isolated dangling bonds on hydrogenated 2H-SiC surfaces

Tuttle, B. R. & Pantelides, S. T., Feb 1 2017, In : Surface Science. 656, p. 109-114 6 p.

Research output: Contribution to journalArticle

Dangling bonds
Carbon
Silicon
Defects
carbon
2015
3 Citations (Scopus)

Activation Energies for Oxide- and Interface-Trap Charge Generation Due to Negative-Bias Temperature Stress of Si-Capped SiGe-pMOSFETs

Duan, G. X., Hatchtel, J., Shen, X., Zhang, E. X., Zhang, C. X., Tuttle, B. R., Fleetwood, D. M., Schrimpf, R. D., Reed, R. A., Franco, J., Linten, D., Mitard, J., Witters, L., Collaert, N., Chisholm, M. F. & Pantelides, S. T., Sep 1 2015, In : IEEE Transactions on Device and Materials Reliability. 15, 3, p. 352-358 7 p., 7118163.

Research output: Contribution to journalArticle

Gate dielectrics
Oxides
Activation energy
Temperature
Atoms
23 Citations (Scopus)

Large excitonic effects in group-IV sulfide monolayers

Tuttle, B. R., Alhassan, S. M. & Pantelides, S. T., Dec 3 2015, In : Physical Review B - Condensed Matter and Materials Physics. 92, 23, 235405.

Research output: Contribution to journalArticle

Sulfides
Binding energy
Excitons
Optoelectronic devices
sulfides
116 Citations (Scopus)

Silicon carbide: A unique platform for metal-oxide-semiconductor physics

Liu, G., Tuttle, B. R. & Dhar, S., Jun 1 2015, In : Applied Physics Reviews. 2, 2, 021307.

Research output: Contribution to journalReview article

metal oxide semiconductors
silicon carbides
platforms
physics
electric power
2014
37 Citations (Scopus)

Atomic state and characterization of nitrogen at the SiC/SiO2 interface

Xu, Y., Zhu, X., Lee, H. D., Xu, C., Shubeita, S. M., Ahyi, A. C., Sharma, Y., Williams, J. R., Lu, W., Ceesay, S., Tuttle, B. R., Wan, A., Pantelides, S. T., Gustafsson, T., Garfunkel, E. L. & Feldman, L. C., Feb 10 2014, In : Journal of Applied Physics. 115, 3, 033502.

Research output: Contribution to journalArticle

nitrogen
oxides
photoelectric emission
field effect transistors
etching
2013
10 Citations (Scopus)

Competing atomic and molecular mechanisms of thermal oxidation-SiC versus Si

Shen, X., Tuttle, B. R. & Pantelides, S. T., Jul 21 2013, In : Journal of Applied Physics. 114, 3, 033522.

Research output: Contribution to journalArticle

oxidation
oxides
minorities
oxygen
3 Citations (Scopus)

Effects of strain on the electrical properties of silicon carbide

Steel, F. M., Tuttle, B. R., Shen, X. & Pantelides, S. T., Jul 7 2013, In : Journal of Applied Physics. 114, 1, 013702.

Research output: Contribution to journalArticle

silicon carbides
electrical properties
valleys
axial strain
conduction bands
6 Citations (Scopus)

Theory of hyperfine active nitrogen complexes observed in 4H-SiC diodes

Tuttle, B. R., Aichinger, T., Lenahan, P. M. & Pantelides, S. T., Sep 21 2013, In : Journal of Applied Physics. 114, 11, 113712.

Research output: Contribution to journalArticle

diodes
nitrogen
defects
electronic levels
signatures
5 Citations (Scopus)

Theory of near-interface trap quenching by impurities in SiC-based metal-oxide-semiconductor devices

Tuttle, B. R., Shen, X. & Pantelides, S. T., Mar 25 2013, In : Applied Physics Letters. 102, 12, 123505.

Research output: Contribution to journalArticle

semiconductor devices
metal oxide semiconductors
quenching
traps
impurities
2012
16 Citations (Scopus)

A nitrogen-related deep level defect in ion implanted 4H-SiC pn junctions-A spin dependent recombination study

Aichinger, T., Lenahan, P. M., Tuttle, B. R. & Peters, D., Mar 12 2012, In : Applied Physics Letters. 100, 11, 112113.

Research output: Contribution to journalArticle

nitrogen
defects
ions
implantation
20 Citations (Scopus)

Mechanisms Separating Time-Dependent and True Dose-Rate Effects in Irradiated Bipolar Oxides

Rowsey, N. L., Law, M. E., Schrimpf, R. D., Fleetwood, D. M., Tuttle, B. R. & Pantelides, S. T., Dec 2012, In : IEEE Transactions on Nuclear Science. 59, 6, p. 3069-3076 8 p.

Research output: Contribution to journalArticle

Dimerization
electron recombination
dosage
Hydrogen
Oxides
11 Citations (Scopus)

Radiation-induced oxide charge in low-and high-h 2 environments

Rowsey, N. L., Law, M. E., Schrimpf, R. D., Fleetwood, D. M., Tuttle, B. R. & Pantelides, S. T., Feb 21 2012, In : IEEE Transactions on Nuclear Science. 59, 4 PART 1, p. 755-759 5 p., 6153410.

Research output: Contribution to journalArticle

Radiation
Hydrogen
Oxides
oxides
traps
1 Citation (Scopus)

Recent advances in first principles computations in materials research

Ramprasad, R., Kumar, V., Fonseca, L. R. C. & Tuttle, B. R., Nov 1 2012, In : Journal of Materials Science. 47, 21, p. 7313-7316 4 p.

Research output: Contribution to journalReview article

Defects
Catalysts
Chemisorption
Optoelectronic devices
Oxides
20 Citations (Scopus)

Reliability of III-V devices - The defects that cause the trouble

Pantelides, S. T., Puzyrev, Y., Shen, X., Roy, T., Dasgupta, S., Tuttle, B. R., Fleetwood, D. M. & Schrimpf, R. D., Feb 1 2012, In : Microelectronic Engineering. 90, p. 3-8 6 p.

Research output: Contribution to journalArticle

Defects
causes
defects
degradation
Degradation
2 Citations (Scopus)

Sodium, rubidium and cesium in the gate oxides of SiC MOSFETs

Tuttle, B. R., Dhar, S., Ryu, S. H., Zhu, X., Williams, J. R., Feldman, L. C. & Pantelides, S. T., May 28 2012, Silicon Carbide and Related Materials 2011, ICSCRM 2011. p. 453-456 4 p. (Materials Science Forum; vol. 717-720).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Rubidium
Cesium
rubidium
cesium
Oxides
29 Citations (Scopus)

The effects of proton-defect interactions on radiation-induced interface-trap formation and annealing

Hughart, D. R., Schrimpf, R. D., Fleetwood, D. M., Rowsey, N. L., Law, M. E., Tuttle, B. R. & Pantelides, S. T., Jan 1 2012, In : IEEE Transactions on Nuclear Science. 59, 6, p. 3087-3092 6 p., 6359809.

Research output: Contribution to journalArticle

Protons
traps
Annealing
Radiation
Defects
2011
29 Citations (Scopus)

A quantitative model for ELDRS and H 2 degradation effects in irradiated oxides based on first principles calculations

Rowsey, N. L., Law, M. E., Schrimpf, R. D., Fleetwood, D. M., Tuttle, B. R. & Pantelides, S. T., Dec 1 2011, In : IEEE Transactions on Nuclear Science. 58, 6 PART 1, p. 2937-2944 8 p., 6060936.

Research output: Contribution to journalArticle

degradation
Degradation
Defects
Oxides
oxides
65 Citations (Scopus)

Dehydrogenation of defects and hot-electron degradation in GaN high-electron-mobility transistors

Puzyrev, Y. S., Roy, T., Beck, M., Tuttle, B. R., Schrimpf, R. D., Fleetwood, D. M. & Pantelides, S. T., Feb 1 2011, In : Journal of Applied Physics. 109, 3, 034501.

Research output: Contribution to journalArticle

dehydrogenation
high electron mobility transistors
hot electrons
point defects
degradation
19 Citations (Scopus)

High electron mobility due to sodium ions in the gate oxide of SiC-metal-oxide-semiconductor field-effect transistors

Tuttle, B. R., Dhar, S., Ryu, S. H., Zhu, X., Williams, J. R., Feldman, L. C. & Pantelides, S. T., Jan 15 2011, In : Journal of Applied Physics. 109, 2, 023702.

Research output: Contribution to journalArticle

electron mobility
metal oxide semiconductors
field effect transistors
sodium
impurities
14 Citations (Scopus)

Mechanisms of interface trap buildup and annealing during elevated temperature irradiation

Hughart, D. R., Schrimpf, R. D., Fleetwood, D. M., Tuttle, B. R. & Pantelides, S. T., Dec 1 2011, In : IEEE Transactions on Nuclear Science. 58, 6 PART 1, p. 2930-2936 7 p., 6072293.

Research output: Contribution to journalArticle

traps
Irradiation
Annealing
irradiation
annealing
1 Citation (Scopus)

Radiation-induced oxide charge in low- and high-H 2 environments

Rowsey, N. L., Law, M. E., Schrimpf, R. D., Fleetwood, D. M., Tuttle, B. R. & Pantelides, S. T., 2011, RADECS 2011 - 12th European Conference on Radiation and Its Effects on Component and Systems, Conference Proceedings. p. 51-53 3 p. 6131384

Research output: Chapter in Book/Report/Conference proceedingConference contribution

trapping
electronic structure
Radiation
Hydrogen
irradiation
2010
34 Citations (Scopus)

Defect interactions of H2 in SiO2: Implications for ELDRS and latent interface trap buildup

Tuttle, B. R., Hughart, D. R., Schrimpf, R. D., Fleetwood, D. M. & Pantelides, S. T., Dec 1 2010, In : IEEE Transactions on Nuclear Science. 57, 6 PART 1, p. 3046-3053 8 p., 5658003.

Research output: Contribution to journalArticle

Vacancies
cracks
traps
Cracks
Defects
34 Citations (Scopus)

Electrical-stress-induced degradation in AlGaN/GaN high electron mobility transistors grown under gallium-rich, nitrogen-rich, and ammonia-rich conditions

Roy, T., Puzyrev, Y. S., Tuttle, B. R., Fleetwood, D. M., Schrimpf, R. D., Brown, D. F., Mishra, U. K. & Pantelides, S. T., Apr 12 2010, In : Applied Physics Letters. 96, 13, 133503.

Research output: Contribution to journalArticle

high electron mobility transistors
gallium
ammonia
degradation
nitrogen
27 Citations (Scopus)

Excess carbon in silicon carbide

Shen, X., Oxley, M. P., Puzyrev, Y., Tuttle, B. R., Duscher, G. & Pantelides, S. T., Dec 15 2010, In : Journal of Applied Physics. 108, 12, 123705.

Research output: Contribution to journalArticle

silicon carbides
carbon
transition layers
interstitials
carrier mobility
19 Citations (Scopus)

Performance, reliability, radiation effects, and aging issues in microelectronics - From atomic-scale physics to engineering-level modeling

Pantelides, S. T., Tsetseris, L., Beck, M. J., Rashkeev, S. N., Hadjisavvas, G., Batyrev, I. G., Tuttle, B. R., Marinopoulos, A. G., Zhou, X. J., Fleetwood, D. M. & Schrimpf, R. D., Sep 1 2010, In : Solid-State Electronics. 54, 9, p. 841-848 8 p.

Research output: Contribution to journalArticle

Radiation effects
radiation effects
microelectronics
Microelectronics
Physics
36 Citations (Scopus)

Theory of hot-carrier-induced phenomena in GaN high-electron-mobility transistors

Puzyrev, Y. S., Tuttle, B. R., Schrimpf, R. D., Fleetwood, D. M. & Pantelides, S. T., Feb 17 2010, In : Applied Physics Letters. 96, 5, 053505.

Research output: Contribution to journalArticle

high electron mobility transistors
hot electrons
luminescence
defects
hydrogen
2009
3 Citations (Scopus)

Performance, reliability, radiation effects, and aging issues in microelectronics - From atomic-scale physics to engineering-level modeling

Pantelides, S. T., Tsetseris, L., Beck, M. J., Rashkeev, S. N., Hadjisavvas, G., Batyrev, I. G., Tuttle, B. R., Marinopoulos, A. G., Zhou, X. J., Fleetwood, D. M. & Schrimpf, R. D., Dec 1 2009, ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference. p. 48-55 8 p. 5331355. (ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

microelectronics
Radiation effects
Microelectronics
physics
Physics

Performance, reliability, radiation effects, and aging issues in microelectronics - From atomic-scale physics to engineering-level modeling

Pantelides, S. T., Tsetseris, L., Beck, M. J., Rashkeev, S. N., Hadjisawas, G., Batyrev, I., Tuttle, B., Marinopoulos, A. G., Zhou, X. J., Fleetwood, D. M. & Schrimpf, R. D., Dec 1 2009, Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 10. 2 ed. p. 319-337 19 p. (ECS Transactions; vol. 19, no. 2).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Radiation effects
Microelectronics
Physics
Aging of materials
Electron mobility

Performance, reliability, radiation effects, and aging issues in microelectronics - From atomic-scale physics to engineering-level modeling

Pantelides, S. T., Tsetseris, L., Beck, M. J., Rashkeev, S. N., Hadjisavvas, G., Batyrev, I. G., Tuttle, B. R., Marinopoulos, A. G., Zhou, X. J., Fleetwood, D. M. & Schrimpf, R. D., Dec 1 2009, ESSCIRC 2009 - Proceedings of the 35th European Solid-State Circuits Conference. p. 76-83 8 p. 5325931. (ESSCIRC 2009 - Proceedings of the 35th European Solid-State Circuits Conference).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Radiation effects
Microelectronics
Physics
Aging of materials
Electron mobility
5 Citations (Scopus)

The effects of aging and hydrogen on the radiation response of gated lateral PNP bipolar transistors

Hughart, D. R., Schrimpf, R. D., Fleetwood, D. M., Chen, X. J., Barnaby, H. J., Holbert, K. E., Pease, R. L., Platteter, D. G., Tuttle, B. R. & Pantelides, S. T., Dec 1 2009, In : IEEE Transactions on Nuclear Science. 56, 6, p. 3361-3366 6 p., 5341350.

Research output: Contribution to journalArticle

Bipolar transistors
bipolar transistors
Aging of materials
Radiation
Hydrogen
18 Citations (Scopus)
Amorphous silicon
Silicon Dioxide
Vacancies
amorphous silicon
Density functional theory
2008
21 Citations (Scopus)

Atomic displacement effects in single-event gate rupture

Beck, M. J., Tuttle, B. R., Schrimpf, R. D., Fleetwood, D. M. & Pantelides, S. T., Dec 1 2008, In : IEEE Transactions on Nuclear Science. 55, 6, p. 3025-3031 7 p., 4723776.

Research output: Contribution to journalArticle

Heavy ions
heavy ions
Defects
defects
nuclear energy
6 Citations (Scopus)

Comment on "theory of defect levels and the 'band gap problem' in silicon"

Tuttle, B. R. & Pantelides, S. T., Aug 21 2008, In : Physical Review Letters. 101, 8, 089701.

Research output: Contribution to journalReview article

defects
silicon
13 Citations (Scopus)

Effects of hydrogen on the radiation response of bipolar transistors: Experiment and modeling

Batyrev, I. G., Hughart, D., Durand, R., Bounasser, M., Tuttle, B. R., Fleetwood, D. M., Schrimpf, R. D., Rashkeev, S. N., Dunham, G. W., Law, M. & Pantelides, S. T., Dec 1 2008, In : IEEE Transactions on Nuclear Science. 55, 6, p. 3039-3045 7 p., 4723752.

Research output: Contribution to journalArticle

Bipolar transistors
bipolar transistors
Radiation
Hydrogen
Protons
40 Citations (Scopus)

Reactions of water molecules in silica-based network glasses

Batyrev, I. G., Tuttle, B., Fleetwood, D. M., Schrimpf, R. D., Tsetseris, L. & Pantelides, S. T., Mar 13 2008, In : Physical Review Letters. 100, 10, 105503.

Research output: Contribution to journalArticle

silica glass
dissolving
silicon dioxide
glass
water
2007
38 Citations (Scopus)

Diffusion of O vacancies near Si:Hf O2 interfaces: An ab initio investigation

Tang, C., Tuttle, B. R. & Ramprasad, R., Aug 13 2007, In : Physical Review B - Condensed Matter and Materials Physics. 76, 7, 073306.

Research output: Contribution to journalArticle

Oxygen vacancies
Vacancies
Thermodynamics
oxygen
energy of formation
11 Citations (Scopus)

First-principles study of the valence band offset between silicon and hafnia

Tuttle, B. R., Tang, C. & Ramprasad, R., Jun 22 2007, In : Physical Review B - Condensed Matter and Materials Physics. 75, 23, 235324.

Research output: Contribution to journalArticle

Silicon
Valence bands
Density functional theory
Heterojunctions
Crystalline materials
1 Citation (Scopus)

Microscopic aspects of the variations in the retention times of dynamic random access memory

Tuttle, B. R. & Meade, R., May 28 2007, In : Applied Physics Letters. 90, 20, 202105.

Research output: Contribution to journalArticle

random access memory
defects
silicon
hydrogen
density functional theory
2006
14 Citations (Scopus)

Hydrogen release in SiO2: Source sites and release mechanisms

Van Ginhoven, R. M., Hjalmarson, H. P., Edwards, A. H. & Tuttle, B. R., Sep 1 2006, In : Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 250, 1-2 SPEC. ISS., p. 274-278 5 p.

Research output: Contribution to journalArticle

Protons
Hydrogen
protons
hydrogen
Dangling bonds
143 Citations (Scopus)

Mechanical stability of possible structures of PtN investigated using first-principles calculations

Patil, S. K. R., Khare, S. V., Tuttle, B. R., Bording, J. K. & Kodambaka, S., Apr 7 2006, In : Physical Review B - Condensed Matter and Materials Physics. 73, 10, 104118.

Research output: Contribution to journalArticle

Mechanical stability
Platinum
Nitrides
nitrides
platinum
2005
3 Citations (Scopus)

On the microscopic behavior of hydrogen in amorphous silicon

Tuttle, B. R., Jun 30 2005, In : Modern Physics Letters B. 19, 15, p. 683-695 13 p.

Research output: Contribution to journalArticle

amorphous silicon
hydrogen
metastable state
electronic structure
defects
2004
22 Citations (Scopus)
Valence bands
Oxides
valence
oxides
Electronic structure
7 Citations (Scopus)

Theory of hydrogen-related metastability in disordered silicon

Tuttle, B. R., Nov 19 2004, In : Physical Review Letters. 93, 21, 215504.

Research output: Contribution to journalArticle

metastable state
amorphous silicon
silicon
hydrogen
atoms
2003
Valence bands
Silicon
Oxides
valence
oxides
23 Citations (Scopus)

Ab initio valence band offsets between Si(100) and SiO2 from microscopic models

Tuttle, B. R., Apr 1 2003, In : Physical Review B - Condensed Matter and Materials Physics. 67, 15, p. 1553241-15532410 13979170 p., 155324.

Research output: Contribution to journalArticle

Valence bands
Silicon
Oxides
valence
oxides