• 329 Citations
  • 9 h-Index
20032018
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Fingerprint Dive into the research topics where Chad Eichfeld is active. These topic labels come from the works of this person. Together they form a unique fingerprint.

  • 4 Similar Profiles
Silicon Chemical Compounds
Nanowires Engineering & Materials Science
nanowires Physics & Astronomy
silicon Physics & Astronomy
Diffusion barriers Chemical Compounds
Vapors Engineering & Materials Science
Ohmic contacts Chemical Compounds
Field effect transistors Engineering & Materials Science

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Research Output 2003 2018

  • 329 Citations
  • 9 h-Index
  • 16 Article
  • 4 Conference contribution
1 Citation (Scopus)

Fabrication and Diffraction Efficiency of a Large-format, Replicated X-Ray Reflection Grating

Miles, D. M., McCoy, J. A., McEntaffer, R. L., Eichfeld, C., Lavallee, G., Labella, M., Drawl, W., Liu, B., Deroo, C. T. & Steiner, T., Dec 20 2018, In : Astrophysical Journal. 869, 2, 95.

Research output: Contribution to journalArticle

diffraction
format
gratings
fabrication
x rays
1 Citation (Scopus)
Topography
topography
gratings
Fabrication
X rays

On the trends and application of pattern density dependent isofocal dose of positive resists for 100 keV electron beam lithography

Lopez, G. G., De Villafranca, G., Azadi, M., Metzler, M. G., Lister, K., Labella, M., Eichfeld, C., Belic, N. & Hofmann, U., Nov 1 2018, In : Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 36, 6, 06JA05.

Research output: Contribution to journalArticle

Electron beam lithography
Silicon
lithography
electron beams
trends
63 Citations (Scopus)

Mimicking Neurotransmitter Release in Chemical Synapses via Hysteresis Engineering in MoS2 Transistors

Arnold, A. J., Razavieh, A., Nasr, J. R., Schulman, D. S., Eichfeld, C. & Das, S., Mar 28 2017, In : ACS Nano. 11, 3, p. 3110-3118 9 p.

Research output: Contribution to journalArticle

neurotransmitters
synapses
Field effect transistors
Neurotransmitter Agents
Hysteresis
3 Citations (Scopus)

Enhancement mode strained (1.3%) germanium quantum well FinFET (WFin=20nm) with high mobility (μHole=700 cm2/Vs), low EOT (∼0.7nm) on bulk silicon substrate

Agrawal, A., Barth, M., Rayner, G. B., Arun, V. T., Eichfeld, C., Lavallee, G., Yu, S. Y., Sang, X., Brookes, S., Zheng, Y., Lee, Y. J., Lin, Y. R., Wu, C. H., Ko, C. H., LeBeau, J., Engel-Herbert, R., Mohney, S. E., Yeo, Y. C. & Datta, S., Feb 20 2015, 2014 IEEE International Electron Devices Meeting, IEDM 2014. February ed. Institute of Electrical and Electronics Engineers Inc., p. 16.4.1-16.4.4 7047064. (Technical Digest - International Electron Devices Meeting, IEDM; vol. 2015-February, no. February).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Germanium
Hole mobility
hole mobility
Silicon
Semiconductor quantum wells