• 1923 Citations
  • 23 h-Index
1990 …2020

Research output per year

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Research Output

2020

Fundamental limitations in transferred CVD graphene caused by Cu catalyst surface morphology

Huet, B., Raskin, J. P., Snyder, D. W. & Redwing, J. M., Aug 15 2020, In : Carbon. 163, p. 95-104 10 p.

Research output: Contribution to journalArticle

Physical vapor deposition of zinc phthalocyanine nanostructures on oxidized silicon and graphene substrates

Mirabito, T., Huet, B., Briseno, A. L. & Snyder, D. W., Mar 1 2020, In : Journal of Crystal Growth. 533, 125484.

Research output: Contribution to journalArticle

2019

A Study of GaAs1- xSbx Axial Nanowires Grown on Monolayer Graphene by Ga-Assisted Molecular Beam Epitaxy for Flexible Near-Infrared Photodetectors

Nalamati, S., Sharma, M., Deshmukh, P., Kronz, J., Lavelle, R., Snyder, D., Reynolds, C. L., Liu, Y. & Iyer, S., Jan 1 2019, In : ACS Applied Nano Materials. 2, 7, p. 4528-4537 10 p.

Research output: Contribution to journalArticle

1 Scopus citations

Multi-wafer batch synthesis of graphene on Cu films by quasi-static flow chemical vapor deposition

Huet, B., Zhang, X., Redwing, J. M., Snyder, D. W. & Raskin, J. P., Aug 16 2019, In : 2D Materials. 6, 4, 045032.

Research output: Contribution to journalArticle

2 Scopus citations
2018

Atomic layer deposition of PbTiO3 and PbZrxTi1-xO3 films using metal alkyl and alkylamide precursors

Sbrockey, N. M., Tompa, G. S., Lavelle, R., Trumbull, K. A., Fanton, M. A., Snyder, D. W., Polcawich, R. G. & Potrepka, D. M., May 2 2018, In : Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 36, 3, 031509.

Research output: Contribution to journalArticle

3 Scopus citations

Thermal characterization of gallium oxide Schottky barrier diodes

Chatterjee, B., Jayawardena, A., Heller, E., Snyder, D. W., Dhar, S. & Choi, S., Nov 1 2018, In : Review of Scientific Instruments. 89, 11, 114903.

Research output: Contribution to journalArticle

11 Scopus citations
2014

Impact of copper overpressure on the synthesis of hexagonal boron nitride atomic layers

Bresnehan, M. S., Bhimanapati, G. R., Wang, K., Snyder, D. W. & Robinson, J. A., Oct 8 2014, In : ACS Applied Materials and Interfaces. 6, 19, p. 16755-16762 8 p.

Research output: Contribution to journalArticle

11 Scopus citations

Prospects of direct growth boron nitride films as substrates for graphene electronics

Bresnehan, M. S., Hollander, M. J., Wetherington, M., Wang, K., Miyagi, T., Pastir, G., Snyder, D. W., Gengler, J. J., Voevodin, A. A., Mitchel, W. C. & Robinson, J. A., Feb 14 2014, In : Journal of Materials Research. 29, 3, p. 459-471 13 p.

Research output: Contribution to journalArticle

31 Scopus citations

Short-channel graphene nanoribbon transistors with enhanced symmetry between p- and n-branches

Hollander, M. J., Madan, H., Shukla, N., Snyder, D. A., Robinson, J. A. & Datta, S., May 2014, In : Applied Physics Express. 7, 5, 055103.

Research output: Contribution to journalArticle

8 Scopus citations
2013

Heterogeneous integration of hexagonal boron nitride on bilayer quasi-free-standing epitaxial graphene and its impact on electrical transport properties

Hollander, M. J., Agrawal, A., Bresnehan, M. S., Labella, M., Trumbull, K. A., Cavalero, R., Snyder, D. W., Datta, S. & Robinson, J. A., Jun 1 2013, In : Physica Status Solidi (A) Applications and Materials Science. 210, 6, p. 1062-1070 9 p.

Research output: Contribution to journalArticle

9 Scopus citations
2012

Advancing quasi-freestanding epitaxial graphene electronics through integration of wafer scale hexagonal boron nitride dielectrics

Bresnehan, M. S., Hollander, M. J., Marucci, R. L., LaBella, M., Trumbull, K. A., Cavalero, R., Snyder, D. W. & Robinson, J. A., 2012, Carbon Nanotubes, Graphene, and Associated Devices V. Vol. 8462. 846207

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Effects of silicon doping and threading dislocation density on stress evolution in AlGaN films

Redwing, J. M., Manning, I. C., Weng, X., Eichfeld, S. M., Acord, J. D., Fanton, M. A. & Snyder, D. W., Aug 20 2012, Compound Semiconductors for Generating, Emitting and Manipulating Energy. p. 183-191 9 p. (Materials Research Society Symposium Proceedings; vol. 1396).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Epitaxial graphene on SiC(0001̄): Stacking order and interfacial structure

Weng, X., Robinson, J. A., Trumbull, K., Cavalero, R., Fanton, M. A. & Snyder, D., Jan 16 2012, In : Applied Physics Letters. 100, 3, 031904.

Research output: Contribution to journalArticle

6 Scopus citations

High performance RF FETs using high-k dielectrics on wafer-scale quasi-free-standing epitaxial graphene

Robinson, J. A., Hollander, M. J., La Bella, M., Trumbull, K., Zhu, M., Cavalero, R. & Snyder, D. W., May 28 2012, Silicon Carbide and Related Materials 2011, ICSCRM 2011. p. 669-674 6 p. (Materials Science Forum; vol. 717-720).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Integration of hexagonal boron nitride with quasi-freestanding epitaxial graphene: Toward wafer-scale, high-performance devices

Bresnehan, M. S., Hollander, M. J., Wetherington, M., Labella, M., Trumbull, K. A., Cavalero, R., Snyder, D. W. & Robinson, J. A., Jun 26 2012, In : ACS nano. 6, 6, p. 5234-5241 8 p.

Research output: Contribution to journalArticle

87 Scopus citations

Record high conversion gain ambipolar graphene mixer at 10GHz using scaled gate oxide

Madan, H., Hollander, M. J., Labella, M., Cavalero, R., Snyder, D. W., Robinson, J. A. & Datta, S., 2012, 2012 IEEE International Electron Devices Meeting, IEDM 2012. 6478977

Research output: Chapter in Book/Report/Conference proceedingConference contribution

14 Scopus citations

Substrate considerations for graphene synthesis on thin copper films

Howsare, C. A., Weng, X., Bojan, V., Snyder, D. & Robinson, J. A., Apr 6 2012, In : Nanotechnology. 23, 13, 135601.

Research output: Contribution to journalArticle

30 Scopus citations
2011

Characterization of graphene films and transistors grown on sapphire by metal-free chemical vapor deposition

Fanton, M. A., Robinson, J. A., Puls, C., Liu, Y., Hollander, M. J., Weiland, B. E., Labella, M., Trumbull, K., Kasarda, R., Howsare, C., Stitt, J. & Snyder, D. W., Oct 25 2011, In : ACS nano. 5, 10, p. 8062-8069 8 p.

Research output: Contribution to journalArticle

116 Scopus citations

Contacting graphene

Robinson, J. A., Labella, M., Zhu, M., Hollander, M., Kasarda, R., Hughes, Z., Trumbull, K., Cavalero, R. & Snyder, D., Jan 31 2011, In : Applied Physics Letters. 98, 5, 053103.

Research output: Contribution to journalArticle

261 Scopus citations

Dual temperature process for reduction in regrowth interfacial charge in AlGaN/GaN HEMTs grown on GaN substrates

Eichfeld, S. M., Won, D., Trumbull, K., Labella, M., Weng, X., Robinson, J. A., Snyder, D. W., Redwing, J. M., Paskova, T., Udwary, K., Mulholland, G., Preble, E. & Evans, K. R., Jul 1 2011, In : Physica Status Solidi (C) Current Topics in Solid State Physics. 8, 7-8, p. 2053-2055 3 p.

Research output: Contribution to journalArticle

3 Scopus citations

Effects of substrate orientation on the structural and electronic properties of epitaxial graphene on SiC(0001)

Robinson, J. A., Trumbull, K. A., Labella, M., Cavalero, R., Hollander, M. J., Zhu, M., Wetherington, M. T., Fanton, M. & Snyder, D. W., May 30 2011, In : Applied Physics Letters. 98, 22, 222109.

Research output: Contribution to journalArticle

20 Scopus citations

Enhanced transport and transistor performance with oxide seeded high-κ gate dielectrics on wafer-scale epitaxial graphene

Hollander, M. J., Labella, M., Hughes, Z. R., Zhu, M., Trumbull, K. A., Cavalero, R., Snyder, D. W., Wang, X., Hwang, E., Datta, S. & Robinson, J. A., Sep 14 2011, In : Nano letters. 11, 9, p. 3601-3607 7 p.

Research output: Contribution to journalArticle

83 Scopus citations

Epitaxial graphene transistors: Enhancing performance via hydrogen intercalation

Robinson, J. A., Hollander, M., Labella, M., Trumbull, K. A., Cavalero, R. & Snyder, D. W., Sep 14 2011, In : Nano letters. 11, 9, p. 3875-3880 6 p.

Research output: Contribution to journalArticle

118 Scopus citations

High temperature ReCOB piezocrystals: Recent developments

Zhang, S., Yu, F., Xia, R., Fei, Y., Frantz, E., Zhao, X., Yuan, D., Chai, B. H. T., Snyder, D. & Shrout, T. R., Mar 1 2011, In : Journal of Crystal Growth. 318, 1, p. 884-889 6 p.

Research output: Contribution to journalArticle

22 Scopus citations
2010

Effects of composition on dislocation microstructure and stress in Si-doped AlxGa1-xN

Manning, I. C., Weng, X., Fanton, M. A., Snyder, D. W. & Redwing, J. M., Apr 1 2010, In : Journal of Crystal Growth. 312, 8, p. 1301-1306 6 p.

Research output: Contribution to journalArticle

5 Scopus citations

Epitaxial graphene materials integration: Effects of dielectric overlayers on structural and electronic properties

Robinson, J. A., Labella, M., Trumbull, K. A., Weng, X., Cavelero, R., Daniels, T., Hughes, Z., Hollander, M., Fanton, M. A. & Snyder, D. W., May 25 2010, In : ACS Nano. 4, 5, p. 2667-2672 6 p.

Research output: Contribution to journalArticle

96 Scopus citations

Nucleation of epitaxial graphene on SiC(0001)

Robinson, J., Weng, X., Trumbull, K., Cavalero, R., Wetherington, M., Frantz, E., LaBella, M., Hughes, Z., Fanton, M. & Snyder, D., Jan 26 2010, In : ACS nano. 4, 1, p. 153-158 6 p.

Research output: Contribution to journalArticle

119 Scopus citations

Structure of few-layer epitaxial graphene on 6H -SiC(0001) at atomic resolution

Weng, X., Robinson, J. A., Trumbull, K., Cavalero, R., Fanton, M. A. & Snyder, D. W., Nov 15 2010, In : Applied Physics Letters. 97, 20, 201905.

Research output: Contribution to journalArticle

25 Scopus citations
2009

Correlating raman spectral signatures with carrier mobility in epitaxial graphene: A guide to achieving high mobility on the wafer scale

Robinson, J. A., Wetherington, M., Tedesco, J. L., Campbell, P. M., Weng, X., Stitt, J., Fanton, M. A., Frantz, E., Snyder, D., VanMil, B. L., Jernigan, G. G., Rachael, L. M. W., Eddy, C. R. & Gaskill, D. K., Aug 12 2009, In : Nano letters. 9, 8, p. 2873-2876 4 p.

Research output: Contribution to journalArticle

149 Scopus citations

Epitaxial graphene growth on SiC wafers

Gaskill, D. K., Jernigan, G. G., Campbell, P. M., Tedesco, J. L., Culbertson, J. C., VanMil, B. L., Myers-Ward, R. L., Eddy, C. R., Moon, J., Curtis, D., Hu, M., Wong, D., McGuire, C., Robinson, J. A., Fanton, M. A., Stitt, J. P., Stitt, T., Snyder, D., Wang, X. & Frantz, E., Dec 1 2009, ECS Transactions - Graphene and Emerging Materials for Post-CMOS Applications. 5 ed. p. 117-124 8 p. (ECS Transactions; vol. 19, no. 5).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

34 Scopus citations

Large-area epitaxial graphene: Effect of strain and thickness on electronic properties

Robinson, J. A., Fanton, M. A., Stitt, J. P., Stitt, T., Snyder, D., Frantz, E., Tedesco, J. L., VanMil, B. L., Jernigan, G., Campbell, P., Myers-Ward, R. L., Eddy, C. R. & Gaskill, D. K., Dec 1 2009, ECS Transactions - Graphene and Emerging Materials for Post-CMOS Applications. 5 ed. p. 107-109 3 p. (ECS Transactions; vol. 19, no. 5).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations

Modeling studies of an impinging jet reactor design for hybrid physical-chemical vapor deposition of superconducting MgB2 films

Lamborn, D. R., Wilke, R. H. T., Li, Q., Xi, X. X., Snyder, D. W. & Redwing, J. M., Mar 1 2009, In : Journal of Crystal Growth. 311, 6, p. 1501-1507 7 p.

Research output: Contribution to journalArticle

2 Scopus citations

Tensile stress generation and dislocation reduction in Si-doped Al x Ga1-x N films

Manning, I. C., Weng, X., Acord, J. D., Fanton, M. A., Snyder, D. W. & Redwing, J. M., Aug 12 2009, In : Journal of Applied Physics. 106, 2, 023506.

Research output: Contribution to journalArticle

37 Scopus citations
2008

Characterization of piezoelectric single crystal y Ca4 O(B O3)3 for high temperature applications

Zhang, S., Fei, Y., Chai, B. H. T., Frantz, E., Snyder, D. W., Jiang, X. & Shrout, T. R., May 30 2008, In : Applied Physics Letters. 92, 20, 202905.

Research output: Contribution to journalArticle

68 Scopus citations

Effects of a compositionally graded buffer layer on stress evolution during GaN and AlxGa1-xN MOCVD on SiC substrates

Acord, J. D., Weng, X., Dickey, E. C., Snyder, D. W. & Redwing, J. M., Apr 1 2008, In : Journal of Crystal Growth. 310, 7-9, p. 2314-2319 6 p.

Research output: Contribution to journalArticle

10 Scopus citations

Gadolinium calcium oxyborate piezoelectric single crystals for ultrahigh temperature (≥1000 °c) applications

Zhang, S., Frantz, E., Xia, R., Everson, W., Randi, J., Snyder, D. W. & Shrout, T. R., Nov 7 2008, In : Journal of Applied Physics. 104, 8, 084103.

Research output: Contribution to journalArticle

54 Scopus citations

Growth and characterization of high temperature La3Nb0.5Ga5.3Al0.2O14 (LNGA) and La3Ta0.5Ga5.3Al0.2O14 (LTGA) piezoelectric single crystals

Zhang, S., Yoshikawa, A., Kamada, K., Frantz, E., Xia, R., Snyder, D. W., Fukuda, T. & Shrout, T. R., Nov 1 2008, In : Solid State Communications. 148, 5-6, p. 213-216 4 p.

Research output: Contribution to journalArticle

47 Scopus citations

Growth of thick MgB2 films by impinging-jet hybrid physical-chemical vapor deposition

Lamborn, D. R., Wilke, R. H. T., Li, Q., Xi, A., Snyder, D. W. & Redwing, J. M., Jan 18 2008, In : Advanced Materials. 20, 2, p. 319-323 5 p.

Research output: Contribution to journalArticle

14 Scopus citations

High-performance, high-TC piezoelectric crystals

Zhang, S. J., Luo, J., Snyder, D. W. & Shrout, T. R., Mar 20 2008, Handbook of Advanced Dielectric, Piezoelectric and Ferroelectric Materials: Synthesis, Properties and Applications. Elsevier Ltd, p. 130-157 28 p.

Research output: Chapter in Book/Report/Conference proceedingChapter

23 Scopus citations

High temperature piezoelectric single crystal GdCa4O(BO 3)3 for sensor application

Frantz, E., Snyder, D. W., Everson, W., Randi, J., Zhang, S. & Shrout, T. R., Dec 1 2008, International Conference and Exhibition on High Temperature Electronics 2008, HiTEC 2008. p. 308-311 4 p. (International Conference and Exhibition on High Temperature Electronics 2008, HiTEC 2008).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

High-temperature piezoelectric single crystal ReCa4O(BO 3)3 for sensor applications

Zhang, S., Fei, Y., Frantz, E., Snyder, D. W., Chai, B. H. T. & Shrout, T. R., Dec 1 2008, In : IEEE transactions on ultrasonics, ferroelectrics, and frequency control. 55, 12, p. 2703-2708 6 p.

Research output: Contribution to journalArticle

52 Scopus citations

High temperature piezoelectric single crystal ReCa4O(BO 3)3 for sensors

Zhang, S., Shrout, T. R., Fei, Y., Chai, B. H. T., Frantz, E. & Snyder, D. W., Nov 13 2008, 2008 IEEE International Frequency Control Symposium, FCS. p. 316-319 4 p. 4623011. (2008 IEEE International Frequency Control Symposium, FCS).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

In situ measurement of stress generation arising from dislocation inclination in AlxGa1-xN:Si thin films

Acord, J. D., Manning, I. C., Weng, X., Snyder, D. W. & Redwing, J. M., Sep 29 2008, In : Applied Physics Letters. 93, 11, 111910.

Research output: Contribution to journalArticle

21 Scopus citations
2007

Dual-heater reactor design for hybrid physical-chemical vapor deposition of MgB2 thin films

Lamborn, D. R., Wilke, R. H. T., Li, Q., Xi, X. X., Snyder, D. W. & Redwing, J. M., Jun 1 2007, In : IEEE Transactions on Applied Superconductivity. 17, 2, p. 2862-2866 5 p.

Research output: Contribution to journalArticle

5 Scopus citations

Modeling studies of the chemical vapor deposition of boron films from B2H6

Lamborn, D. R., Snyder, D. W., Xi, X. X. & Redwing, J. M., Feb 15 2007, In : Journal of Crystal Growth. 299, 2, p. 358-364 7 p.

Research output: Contribution to journalArticle

14 Scopus citations

Stress and morphology evolution during the heteroepitaxial growth of group III-nitrides

Redwing, J. M., Acord, J. D., Manning, I., Raghavan, S., Weng, X., Dickey, E. C. & Snyder, D. W., Dec 1 2007, 2007 International Semiconductor Device Research Symposium, ISDRS. 4422504. (2007 International Semiconductor Device Research Symposium, ISDRS).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Thermodynamic equilibrium limitations on the growth of SiC by halide chemical vapor deposition

Fanton, M. A., Weiland, B. E., Snyder, D. W. & Redwing, J. M., Jan 24 2007, In : Journal of Applied Physics. 101, 1, 014903.

Research output: Contribution to journalArticle

13 Scopus citations
2006

Growth kinetics and polytype stability in halide chemical vapor deposition of SiC

Nigam, S., Chung, H. J., Huh, S. W., Grim, J., Polyakov, A. Y., Fanton, M. A., Weiland, B., Snyder, D. W. & Skowronski, M., Dec 1 2006, Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005. PART 1 ed. p. 27-30 4 p. (Materials Science Forum; vol. 527-529, no. PART 1).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Growth of 6H-SiC crystals with low boron concentration

Fanton, M. A., Cavalero, R. L., Weiland, B. E., Ray, R. G., Snyder, D. W., Gamble, R. D., Oslosky, E. J. & Everson, W. J., Jan 25 2006, In : Journal of Crystal Growth. 287, 2, p. 363-366 4 p.

Research output: Contribution to journalArticle

2 Scopus citations

Growth of nitrogen-doped SiC boules by halide chemical vapor deposition

Fanton, M., Snyder, D., Weiland, B., Cavalero, R., Polyakov, A., Skowronski, M. & Chung, H., Jan 25 2006, In : Journal of Crystal Growth. 287, 2, p. 359-362 4 p.

Research output: Contribution to journalArticle

15 Scopus citations