• 1852 Citations
  • 23 h-Index
1990 …2019
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Research Output 1990 2019

2019

Multi-wafer batch synthesis of graphene on Cu films by quasi-static flow chemical vapor deposition

Huet, B., Zhang, X., Redwing, J. M., Snyder, D. W. & Raskin, J. P., Aug 16 2019, In : 2D Materials. 6, 4, 045032.

Research output: Contribution to journalArticle

Graphite
Graphene
Chemical vapor deposition
graphene
vapor deposition
2018
3 Citations (Scopus)

Atomic layer deposition of PbTiO3 and PbZrxTi1-xO3 films using metal alkyl and alkylamide precursors

Sbrockey, N. M., Tompa, G. S., Lavelle, R., Trumbull, K. A., Fanton, M. A., Snyder, D. W., Polcawich, R. G. & Potrepka, D. M., May 2 2018, In : Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 36, 3, 031509.

Research output: Contribution to journalArticle

Atomic layer deposition
atomic layer epitaxy
metal films
Metals
Zirconium
8 Citations (Scopus)

Thermal characterization of gallium oxide Schottky barrier diodes

Chatterjee, B., Jayawardena, A., Heller, E., Snyder, D. W., Dhar, S. & Choi, S., Nov 1 2018, In : Review of Scientific Instruments. 89, 11, 114903.

Research output: Contribution to journalArticle

Schottky barrier diodes
gallium oxides
Gallium
Schottky diodes
Oxides
2014
11 Citations (Scopus)

Impact of copper overpressure on the synthesis of hexagonal boron nitride atomic layers

Bresnehan, M. S., Bhimanapati, G. R., Wang, K., Snyder, D. W. & Robinson, J. A., Oct 8 2014, In : ACS Applied Materials and Interfaces. 6, 19, p. 16755-16762 8 p.

Research output: Contribution to journalArticle

Boron nitride
Copper
Fullerenes
Metal foil
Chemical vapor deposition
29 Citations (Scopus)

Prospects of direct growth boron nitride films as substrates for graphene electronics

Bresnehan, M. S., Hollander, M. J., Wetherington, M., Wang, K., Miyagi, T., Pastir, G., Snyder, D. W., Gengler, J. J., Voevodin, A. A., Mitchel, W. C. & Robinson, J. A., Feb 14 2014, In : Journal of Materials Research. 29, 3, p. 459-471 13 p.

Research output: Contribution to journalArticle

Graphite
Boron nitride
boron nitrides
Graphene
graphene
8 Citations (Scopus)

Short-channel graphene nanoribbon transistors with enhanced symmetry between p- and n-branches

Hollander, M. J., Madan, H., Shukla, N., Snyder, D. A., Robinson, J. A. & Datta, S., May 2014, In : Applied Physics Express. 7, 5, 055103.

Research output: Contribution to journalArticle

Nanoribbons
Graphene
graphene
Transistors
transistors
2013
9 Citations (Scopus)

Heterogeneous integration of hexagonal boron nitride on bilayer quasi-free-standing epitaxial graphene and its impact on electrical transport properties

Hollander, M. J., Agrawal, A., Bresnehan, M. S., Labella, M., Trumbull, K. A., Cavalero, R., Snyder, D. W., Datta, S. & Robinson, J. A., Jun 1 2013, In : Physica Status Solidi (A) Applications and Materials Science. 210, 6, p. 1062-1070 9 p.

Research output: Contribution to journalArticle

Graphite
Boron nitride
boron nitrides
Transport properties
Graphene
2012

Advancing quasi-freestanding epitaxial graphene electronics through integration of wafer scale hexagonal boron nitride dielectrics

Bresnehan, M. S., Hollander, M. J., Marucci, R. L., LaBella, M., Trumbull, K. A., Cavalero, R., Snyder, D. W. & Robinson, J. A., 2012, Carbon Nanotubes, Graphene, and Associated Devices V. Vol. 8462. 846207

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Nitrides
Graphite
Boron nitride
Graphene
boron nitrides

Effects of silicon doping and threading dislocation density on stress evolution in AlGaN films

Redwing, J. M., Manning, I. C., Weng, X., Eichfeld, S. M., Acord, J. D., Fanton, M. A. & Snyder, D. W., Aug 20 2012, Compound Semiconductors for Generating, Emitting and Manipulating Energy. p. 183-191 9 p. (Materials Research Society Symposium Proceedings; vol. 1396).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Silicon
Doping (additives)
silicon
inclination
Compressive stress
5 Citations (Scopus)

Epitaxial graphene on SiC(0001̄): Stacking order and interfacial structure

Weng, X., Robinson, J. A., Trumbull, K., Cavalero, R., Fanton, M. A. & Snyder, D. W., Jan 16 2012, In : Applied Physics Letters. 100, 3, 031904.

Research output: Contribution to journalArticle

graphene
transmission electron microscopy
interlayers
spacing
electron diffraction
1 Citation (Scopus)

High performance RF FETs using high-k dielectrics on wafer-scale quasi-free-standing epitaxial graphene

Robinson, J. A., Hollander, M. J., La Bella, M., Trumbull, K., Zhu, M., Cavalero, R. & Snyder, D. W., May 28 2012, Silicon Carbide and Related Materials 2011, ICSCRM 2011. p. 669-674 6 p. (Materials Science Forum; vol. 717-720).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Graphite
Field effect transistors
Graphene
graphene
field effect transistors
84 Citations (Scopus)

Integration of hexagonal boron nitride with quasi-freestanding epitaxial graphene: Toward wafer-scale, high-performance devices

Bresnehan, M. S., Hollander, M. J., Wetherington, M., Labella, M., Trumbull, K. A., Cavalero, R., Snyder, D. W. & Robinson, J. A., Jun 26 2012, In : ACS nano. 6, 6, p. 5234-5241 8 p.

Research output: Contribution to journalArticle

Graphite
Boron nitride
boron nitrides
Graphene
graphene
14 Citations (Scopus)

Record high conversion gain ambipolar graphene mixer at 10GHz using scaled gate oxide

Madan, H., Hollander, M. J., Labella, M., Cavalero, R., Snyder, D. W., Robinson, J. A. & Datta, S., 2012, 2012 IEEE International Electron Devices Meeting, IEDM 2012. 6478977

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Graphite
Oxides
Graphene
graphene
oxides
28 Citations (Scopus)

Substrate considerations for graphene synthesis on thin copper films

Howsare, C. A., Weng, X., Bojan, V., Snyder, D. W. & Robinson, J. A., Apr 6 2012, In : Nanotechnology. 23, 13, 135601.

Research output: Contribution to journalArticle

Graphite
Graphene
Copper
Substrates
Chemical vapor deposition
2011
109 Citations (Scopus)

Characterization of graphene films and transistors grown on sapphire by metal-free chemical vapor deposition

Fanton, M. A., Robinson, J. A., Puls, C., Liu, Y., Hollander, M. J., Weiland, B. E., Labella, M., Trumbull, K., Kasarda, R., Howsare, C., Stitt, J. & Snyder, D. W., Oct 25 2011, In : ACS nano. 5, 10, p. 8062-8069 8 p.

Research output: Contribution to journalArticle

Graphite
Aluminum Oxide
Sapphire
Graphene
Chemical vapor deposition
255 Citations (Scopus)

Contacting graphene

Robinson, J. A., Labella, M., Zhu, M., Hollander, M., Kasarda, R., Hughes, Z., Trumbull, K., Cavalero, R. & Snyder, D., Jan 31 2011, In : Applied Physics Letters. 98, 5, 053103.

Research output: Contribution to journalArticle

electric contacts
graphene
contact resistance
metals
high speed
2 Citations (Scopus)

Dual temperature process for reduction in regrowth interfacial charge in AlGaN/GaN HEMTs grown on GaN substrates

Eichfeld, S. M., Won, D., Trumbull, K., Labella, M., Weng, X., Robinson, J. A., Snyder, D. W., Redwing, J. M., Paskova, T., Udwary, K., Mulholland, G., Preble, E. & Evans, K. R., Jul 1 2011, In : Physica Status Solidi (C) Current Topics in Solid State Physics. 8, 7-8, p. 2053-2055 3 p.

Research output: Contribution to journalArticle

high electron mobility transistors
temperature compensation
metalorganic chemical vapor deposition
temperature
electrical properties
20 Citations (Scopus)

Effects of substrate orientation on the structural and electronic properties of epitaxial graphene on SiC(0001)

Robinson, J. A., Trumbull, K. A., Labella, M., Cavalero, R., Hollander, M. J., Zhu, M., Wetherington, M. T., Fanton, M. A. & Snyder, D. W., May 30 2011, In : Applied Physics Letters. 98, 22, 222109.

Research output: Contribution to journalArticle

silicon carbides
graphene
electronics
wafers
carrier mobility
81 Citations (Scopus)

Enhanced transport and transistor performance with oxide seeded high-κ gate dielectrics on wafer-scale epitaxial graphene

Hollander, M. J., Labella, M., Hughes, Z. R., Zhu, M., Trumbull, K. A., Cavalero, R., Snyder, D. W., Wang, X., Hwang, E., Datta, S. & Robinson, J. A., Sep 14 2011, In : Nano letters. 11, 9, p. 3601-3607 7 p.

Research output: Contribution to journalArticle

Graphite
Gate dielectrics
Oxides
Graphene
graphene
112 Citations (Scopus)

Epitaxial graphene transistors: Enhancing performance via hydrogen intercalation

Robinson, J. A., Hollander, M., Labella, M., Trumbull, K. A., Cavalero, R. & Snyder, D. W., Sep 14 2011, In : Nano Letters. 11, 9, p. 3875-3880 6 p.

Research output: Contribution to journalArticle

Intercalation
intercalation
Hydrogen
Buffers
graphene
19 Citations (Scopus)

High temperature ReCOB piezocrystals: Recent developments

Zhang, S., Yu, F., Xia, R., Fei, Y., Frantz, E., Zhao, X., Yuan, D., Chai, B. H. T., Snyder, D. W. & Shrout, T. R., Mar 1 2011, In : Journal of Crystal Growth. 318, 1, p. 884-889 6 p.

Research output: Contribution to journalArticle

Crystals
crystals
Temperature
electrical resistivity
temperature
2010
5 Citations (Scopus)

Effects of composition on dislocation microstructure and stress in Si-doped AlxGa1-xN

Manning, I. C., Weng, X., Fanton, M. A., Snyder, D. W. & Redwing, J. M., Apr 1 2010, In : Journal of Crystal Growth. 312, 8, p. 1301-1306 6 p.

Research output: Contribution to journalArticle

Epilayers
Tensile stress
inclination
Transmission electron microscopy
Defects
94 Citations (Scopus)

Epitaxial graphene materials integration: Effects of dielectric overlayers on structural and electronic properties

Robinson, J. A., Labella, M., Trumbull, K. A., Weng, X., Cavelero, R., Daniels, T., Hughes, Z., Hollander, M., Fanton, M. A. & Snyder, D. W., May 25 2010, In : ACS Nano. 4, 5, p. 2667-2672 6 p.

Research output: Contribution to journalArticle

Graphite
Electronic properties
Graphene
Structural properties
graphene
117 Citations (Scopus)

Nucleation of epitaxial graphene on SiC(0001)

Robinson, J. A., Weng, X., Trumbull, K., Cavalero, R., Wetherington, M., Frantz, E., LaBella, M., Hughes, Z., Fanton, M. A. & Snyder, D. W., Jan 26 2010, In : ACS Nano. 4, 1, p. 153-158 6 p.

Research output: Contribution to journalArticle

Graphite
Graphene
graphene
Nucleation
nucleation
25 Citations (Scopus)

Structure of few-layer epitaxial graphene on 6H -SiC(0001) at atomic resolution

Weng, X., Robinson, J. A., Trumbull, K., Cavalero, R., Fanton, M. A. & Snyder, D. W., Nov 15 2010, In : Applied Physics Letters. 97, 20, 201905.

Research output: Contribution to journalArticle

graphene
interlayers
discontinuity
graphite
spacing
2009
142 Citations (Scopus)

Correlating raman spectral signatures with carrier mobility in epitaxial graphene: A guide to achieving high mobility on the wafer scale

Robinson, J. A., Wetherington, M., Tedesco, J. L., Campbell, P. M., Weng, X., Stitt, J., Fanton, M. A., Frantz, E., Snyder, D., VanMil, B. L., Jernigan, G. G., Rachael, L. M. W., Eddy, C. R. & Gaskill, D. K., Aug 12 2009, In : Nano letters. 9, 8, p. 2873-2876 4 p.

Research output: Contribution to journalArticle

spectral signatures
Graphite
Carrier mobility
carrier mobility
Silicon carbide
34 Citations (Scopus)

Epitaxial graphene growth on SiC wafers

Gaskill, D. K., Jernigan, G. G., Campbell, P. M., Tedesco, J. L., Culbertson, J. C., VanMil, B. L., Myers-Ward, R. L., Eddy, C. R., Moon, J., Curtis, D., Hu, M., Wong, D., McGuire, C., Robinson, J. A., Fanton, M. A., Stitt, J. P., Stitt, T., Snyder, D. W., Wang, X. & Frantz, E., Dec 1 2009, ECS Transactions - Graphene and Emerging Materials for Post-CMOS Applications. 5 ed. p. 117-124 8 p. (ECS Transactions; vol. 19, no. 5).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Graphene
Thermal desorption
Field effect transistors
Raman scattering
Chemical vapor deposition
5 Citations (Scopus)

Large-area epitaxial graphene: Effect of strain and thickness on electronic properties

Robinson, J. A., Fanton, M. A., Stitt, J. P., Stitt, T., Snyder, D. W., Frantz, E., Tedesco, J. L., VanMil, B. L., Jernigan, G., Campbell, P., Myers-Ward, R. L., Eddy, C. R. & Gaskill, D. K., Dec 1 2009, ECS Transactions - Graphene and Emerging Materials for Post-CMOS Applications. 5 ed. p. 107-109 3 p. (ECS Transactions; vol. 19, no. 5).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Electronic properties
Graphene
Hall mobility
Carrier mobility
Silicon carbide
2 Citations (Scopus)

Modeling studies of an impinging jet reactor design for hybrid physical-chemical vapor deposition of superconducting MgB2 films

Lamborn, D. R., Wilke, R. H. T., Li, Q., Xi, X. X., Snyder, D. W. & Redwing, J. M., Mar 1 2009, In : Journal of Crystal Growth. 311, 6, p. 1501-1507 7 p.

Research output: Contribution to journalArticle

reactor design
Superconducting films
Physical vapor deposition
superconducting films
Boron
36 Citations (Scopus)

Tensile stress generation and dislocation reduction in Si-doped Al x Ga1-x N films

Manning, I. C., Weng, X., Acord, J. D., Fanton, M. A., Snyder, D. W. & Redwing, J. M., Aug 12 2009, In : Journal of Applied Physics. 106, 2, 023506.

Research output: Contribution to journalArticle

tensile stress
inclination
metalorganic chemical vapor deposition
proportion
curvature
2008
63 Citations (Scopus)

Characterization of piezoelectric single crystal y Ca4 O(B O3)3 for high temperature applications

Zhang, S., Fei, Y., Chai, B. H. T., Frantz, E., Snyder, D. W., Jiang, X. & Shrout, T. R., May 30 2008, In : Applied Physics Letters. 92, 20, 202905.

Research output: Contribution to journalArticle

piezoelectric crystals
single crystals
temperature
smart structures
yttrium
10 Citations (Scopus)

Effects of a compositionally graded buffer layer on stress evolution during GaN and AlxGa1-xN MOCVD on SiC substrates

Acord, J. D., Weng, X., Dickey, E. C., Snyder, D. W. & Redwing, J. M., Apr 1 2008, In : Journal of Crystal Growth. 310, 7-9, p. 2314-2319 6 p.

Research output: Contribution to journalArticle

Organic Chemicals
Organic chemicals
Buffer layers
metalorganic chemical vapor deposition
Chemical vapor deposition
53 Citations (Scopus)

Gadolinium calcium oxyborate piezoelectric single crystals for ultrahigh temperature (≥1000 °c) applications

Zhang, S., Frantz, E., Xia, R., Everson, W., Randi, III, J. A., Snyder, D. W. & Shrout, T. R., Nov 7 2008, In : Journal of Applied Physics. 104, 8, 084103.

Research output: Contribution to journalArticle

piezoelectric crystals
gadolinium
calcium
single crystals
crystals
46 Citations (Scopus)

Growth and characterization of high temperature La3Nb0.5Ga5.3Al0.2O14 (LNGA) and La3Ta0.5Ga5.3Al0.2O14 (LTGA) piezoelectric single crystals

Zhang, S., Yoshikawa, A., Kamada, K., Frantz, E., Xia, R., Snyder, D. W., Fukuda, T. & Shrout, T. R., Nov 1 2008, In : Solid State Communications. 148, 5-6, p. 213-216 4 p.

Research output: Contribution to journalArticle

piezoelectric crystals
Single crystals
single crystals
operators
Crystals
14 Citations (Scopus)

Growth of thick MgB2 films by impinging-jet hybrid physical-chemical vapor deposition

Lamborn, D. R., Wilke, R. H. T., Li, Q., Xi, A., Snyder, D. W. & Redwing, J. M., Jan 18 2008, In : Advanced Materials. 20, 2, p. 319-323 5 p.

Research output: Contribution to journalArticle

Physical vapor deposition
Thick films
Chemical vapor deposition
Thin films
Superconducting materials
20 Citations (Scopus)

High-performance, high-TC piezoelectric crystals

Zhang, S., Luo, J., Snyder, D. W. & Shrout, T. R., Mar 20 2008, Handbook of Advanced Dielectric, Piezoelectric and Ferroelectric Materials: Synthesis, Properties and Applications. Elsevier Ltd, p. 130-157 28 p.

Research output: Chapter in Book/Report/Conference proceedingChapter

Crystals

High temperature piezoelectric single crystal GdCa4O(BO 3)3 for sensor application

Frantz, E., Snyder, D. W., Everson, W., Randi, III, J. A., Zhang, S. & Shrout, T. R., Dec 1 2008, International Conference and Exhibition on High Temperature Electronics 2008, HiTEC 2008. p. 308-311 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Single crystals
Sensors
Electromechanical coupling
Temperature
Crystals
49 Citations (Scopus)

High-temperature piezoelectric single crystal ReCa4O(BO 3)3 for sensor applications

Zhang, S., Fei, Y., Frantz, E., Snyder, D. W., Chai, B. H. T. & Shrout, T. R., Dec 1 2008, In : IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control. 55, 12, p. 2703-2708 6 p.

Research output: Contribution to journalArticle

piezoelectric crystals
Single crystals
sensors
single crystals
Sensors
1 Citation (Scopus)

High temperature piezoelectric single crystal ReCa4O(BO 3)3 for sensors

Zhang, S., Shrout, T. R., Fei, Y., Chai, B. H. T., Frantz, E. & Snyder, D. W., Nov 13 2008, 2008 IEEE International Frequency Control Symposium, FCS. p. 316-319 4 p. 4623011. (2008 IEEE International Frequency Control Symposium, FCS).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Single crystals
Sensors
Temperature
Crystal growth from melt
Electromechanical coupling
21 Citations (Scopus)

In situ measurement of stress generation arising from dislocation inclination in AlxGa1-xN:Si thin films

Acord, J. D., Manning, I. C., Weng, X., Snyder, D. W. & Redwing, J. M., Sep 29 2008, In : Applied Physics Letters. 93, 11, 111910.

Research output: Contribution to journalArticle

in situ measurement
inclination
thin films
tensile stress
metalorganic chemical vapor deposition
2007
5 Citations (Scopus)

Dual-heater reactor design for hybrid physical-chemical vapor deposition of MgB2 thin films

Lamborn, D. R., Wilke, R. H. T., Li, Q., Xi, X. X., Snyder, D. W. & Redwing, J. M., Jun 1 2007, In : IEEE Transactions on Applied Superconductivity. 17, 2, p. 2862-2866 5 p.

Research output: Contribution to journalArticle

reactor design
Physical vapor deposition
heaters
Chemical vapor deposition
vapor deposition
14 Citations (Scopus)

Modeling studies of the chemical vapor deposition of boron films from B2H6

Lamborn, D. R., Snyder, D. W., Xi, X. X. & Redwing, J. M., Feb 15 2007, In : Journal of Crystal Growth. 299, 2, p. 358-364 7 p.

Research output: Contribution to journalArticle

Boron
Chemical vapor deposition
boron
vapor deposition
Boranes

Stress and morphology evolution during the heteroepitaxial growth of group III-nitrides

Redwing, J. M., Acord, J. D., Manning, I., Raghavan, S., Weng, X., Dickey, E. C. & Snyder, D. W., Dec 1 2007, 2007 International Semiconductor Device Research Symposium, ISDRS. 4422504. (2007 International Semiconductor Device Research Symposium, ISDRS).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Epitaxial growth
Nitrides
11 Citations (Scopus)

Thermodynamic equilibrium limitations on the growth of SiC by halide chemical vapor deposition

Fanton, M. A., Weiland, B. E., Snyder, D. W. & Redwing, J. M., Jan 24 2007, In : Journal of Applied Physics. 101, 1, 014903.

Research output: Contribution to journalArticle

thermodynamic equilibrium
halides
vapor deposition
single crystals
vapor phases
2006
3 Citations (Scopus)

Growth kinetics and polytype stability in halide chemical vapor deposition of SiC

Nigam, S., Chung, H. J., Huh, S. W., Grim, J., Polyakov, A. Y., Fanton, M. A., Weiland, B., Snyder, D. W. & Skowronski, M., Dec 1 2006, Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005. PART 1 ed. p. 27-30 4 p. (Materials Science Forum; vol. 527-529, no. PART 1).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Growth kinetics
halides
Chemical vapor deposition
vapor deposition
kinetics
2 Citations (Scopus)

Growth of 6H-SiC crystals with low boron concentration

Fanton, M. A., Cavalero, R. L., Weiland, B. E., Ray, R. G., Snyder, D. W., Gamble, R. D., Oslosky, E. J. & Everson, W. J., Jan 25 2006, In : Journal of Crystal Growth. 287, 2, p. 363-366 4 p.

Research output: Contribution to journalArticle

Boron
boron
boules
Atoms
Crystals
14 Citations (Scopus)

Growth of nitrogen-doped SiC boules by halide chemical vapor deposition

Fanton, M. A., Snyder, D. W., Weiland, B., Cavalero, R., Polyakov, A., Skowronski, M. & Chung, H., Jan 25 2006, In : Journal of Crystal Growth. 287, 2, p. 359-362 4 p.

Research output: Contribution to journalArticle

boules
halides
Chemical vapor deposition
Nitrogen
vapor deposition
1 Citation (Scopus)

Growth of SiC boules with low boron concentration

Fanton, M. A., Cavalero, R. L., Ray, R. G., Weiland, B. E., Everson, W., Snyder, D., Gamble, R. & Oslosky, E., Dec 1 2006, Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005. PART 1 ed. p. 47-50 4 p. (Materials Science Forum; vol. 527-529, no. PART 1).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

boules
Boron
boron
Graphite
Diffusion barriers

Microwave dielectric loss characterization of silicon carbide wafers

Bogart, T., Everson, B., Gamble, R., Oslosky, E., Snyder, D., Furman, E., Perini, S. & Lanagan, M., Dec 1 2006, Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005. PART 1 ed. p. 733-736 4 p. (Materials Science Forum; vol. 527-529, no. PART 1).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Dielectric losses
Silicon carbide
Microwaves
Dielectric resonators
High electron mobility transistors
2 Citations (Scopus)

Preparation and evaluation of damage free surfaces on silicon carbide

Everson, W. J., Heydemann, V. D., Gamble, R. D., Snyder, D. W., Goda, G., Skowronski, M., Grim, J., Berkman, E., Redwing, J. M. & Acord, J. D., Dec 1 2006, Silicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005. PART 2 ed. p. 1091-1094 4 p. (Materials Science Forum; vol. 527-529, no. PART 2).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Silicon carbide
Chemical mechanical polishing
Epitaxial layers
Substrates
Polishing