• 1852 Citations
  • 23 h-Index
1990 …2019
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Research Output 1990 2019

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Conference contribution
2012

Advancing quasi-freestanding epitaxial graphene electronics through integration of wafer scale hexagonal boron nitride dielectrics

Bresnehan, M. S., Hollander, M. J., Marucci, R. L., LaBella, M., Trumbull, K. A., Cavalero, R., Snyder, D. W. & Robinson, J. A., 2012, Carbon Nanotubes, Graphene, and Associated Devices V. Vol. 8462. 846207

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Nitrides
Graphite
Boron nitride
Graphene
boron nitrides

Effects of silicon doping and threading dislocation density on stress evolution in AlGaN films

Redwing, J. M., Manning, I. C., Weng, X., Eichfeld, S. M., Acord, J. D., Fanton, M. A. & Snyder, D. W., Aug 20 2012, Compound Semiconductors for Generating, Emitting and Manipulating Energy. p. 183-191 9 p. (Materials Research Society Symposium Proceedings; vol. 1396).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Silicon
Doping (additives)
silicon
inclination
Compressive stress
1 Citation (Scopus)

High performance RF FETs using high-k dielectrics on wafer-scale quasi-free-standing epitaxial graphene

Robinson, J. A., Hollander, M. J., La Bella, M., Trumbull, K., Zhu, M., Cavalero, R. & Snyder, D. W., May 28 2012, Silicon Carbide and Related Materials 2011, ICSCRM 2011. p. 669-674 6 p. (Materials Science Forum; vol. 717-720).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Graphite
Field effect transistors
Graphene
graphene
field effect transistors
14 Citations (Scopus)

Record high conversion gain ambipolar graphene mixer at 10GHz using scaled gate oxide

Madan, H., Hollander, M. J., Labella, M., Cavalero, R., Snyder, D. W., Robinson, J. A. & Datta, S., 2012, 2012 IEEE International Electron Devices Meeting, IEDM 2012. 6478977

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Graphite
Oxides
Graphene
graphene
oxides
2009
34 Citations (Scopus)

Epitaxial graphene growth on SiC wafers

Gaskill, D. K., Jernigan, G. G., Campbell, P. M., Tedesco, J. L., Culbertson, J. C., VanMil, B. L., Myers-Ward, R. L., Eddy, C. R., Moon, J., Curtis, D., Hu, M., Wong, D., McGuire, C., Robinson, J. A., Fanton, M. A., Stitt, J. P., Stitt, T., Snyder, D. W., Wang, X. & Frantz, E., Dec 1 2009, ECS Transactions - Graphene and Emerging Materials for Post-CMOS Applications. 5 ed. p. 117-124 8 p. (ECS Transactions; vol. 19, no. 5).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Graphene
Thermal desorption
Field effect transistors
Raman scattering
Chemical vapor deposition
5 Citations (Scopus)

Large-area epitaxial graphene: Effect of strain and thickness on electronic properties

Robinson, J. A., Fanton, M. A., Stitt, J. P., Stitt, T., Snyder, D. W., Frantz, E., Tedesco, J. L., VanMil, B. L., Jernigan, G., Campbell, P., Myers-Ward, R. L., Eddy, C. R. & Gaskill, D. K., Dec 1 2009, ECS Transactions - Graphene and Emerging Materials for Post-CMOS Applications. 5 ed. p. 107-109 3 p. (ECS Transactions; vol. 19, no. 5).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Electronic properties
Graphene
Hall mobility
Carrier mobility
Silicon carbide
2008

High temperature piezoelectric single crystal GdCa4O(BO 3)3 for sensor application

Frantz, E., Snyder, D. W., Everson, W., Randi, III, J. A., Zhang, S. & Shrout, T. R., Dec 1 2008, International Conference and Exhibition on High Temperature Electronics 2008, HiTEC 2008. p. 308-311 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Single crystals
Sensors
Electromechanical coupling
Temperature
Crystals
1 Citation (Scopus)

High temperature piezoelectric single crystal ReCa4O(BO 3)3 for sensors

Zhang, S., Shrout, T. R., Fei, Y., Chai, B. H. T., Frantz, E. & Snyder, D. W., Nov 13 2008, 2008 IEEE International Frequency Control Symposium, FCS. p. 316-319 4 p. 4623011. (2008 IEEE International Frequency Control Symposium, FCS).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Single crystals
Sensors
Temperature
Crystal growth from melt
Electromechanical coupling
2007

Stress and morphology evolution during the heteroepitaxial growth of group III-nitrides

Redwing, J. M., Acord, J. D., Manning, I., Raghavan, S., Weng, X., Dickey, E. C. & Snyder, D. W., Dec 1 2007, 2007 International Semiconductor Device Research Symposium, ISDRS. 4422504. (2007 International Semiconductor Device Research Symposium, ISDRS).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Epitaxial growth
Nitrides
2006
3 Citations (Scopus)

Growth kinetics and polytype stability in halide chemical vapor deposition of SiC

Nigam, S., Chung, H. J., Huh, S. W., Grim, J., Polyakov, A. Y., Fanton, M. A., Weiland, B., Snyder, D. W. & Skowronski, M., Dec 1 2006, Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005. PART 1 ed. p. 27-30 4 p. (Materials Science Forum; vol. 527-529, no. PART 1).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Growth kinetics
halides
Chemical vapor deposition
vapor deposition
kinetics
1 Citation (Scopus)

Growth of SiC boules with low boron concentration

Fanton, M. A., Cavalero, R. L., Ray, R. G., Weiland, B. E., Everson, W., Snyder, D., Gamble, R. & Oslosky, E., Dec 1 2006, Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005. PART 1 ed. p. 47-50 4 p. (Materials Science Forum; vol. 527-529, no. PART 1).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

boules
Boron
boron
Graphite
Diffusion barriers

Microwave dielectric loss characterization of silicon carbide wafers

Bogart, T., Everson, B., Gamble, R., Oslosky, E., Snyder, D., Furman, E., Perini, S. & Lanagan, M., Dec 1 2006, Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005. PART 1 ed. p. 733-736 4 p. (Materials Science Forum; vol. 527-529, no. PART 1).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Dielectric losses
Silicon carbide
Microwaves
Dielectric resonators
High electron mobility transistors
2 Citations (Scopus)

Preparation and evaluation of damage free surfaces on silicon carbide

Everson, W. J., Heydemann, V. D., Gamble, R. D., Snyder, D. W., Goda, G., Skowronski, M., Grim, J., Berkman, E., Redwing, J. M. & Acord, J. D., Dec 1 2006, Silicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005. PART 2 ed. p. 1091-1094 4 p. (Materials Science Forum; vol. 527-529, no. PART 2).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Silicon carbide
Chemical mechanical polishing
Epitaxial layers
Substrates
Polishing

Spatially and temporally resolved temperature measurement of laser diode arrays

Carter, J. & Snyder, D. W., 2006, Proceedings of the ASME/Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems: Advances in Electronic Packaging 2005. Vol. PART C. p. 2241-2255 15 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Temperature measurement
Semiconductor lasers
Wavelength
Temperature
Spectrographs
2005

Spatially and temporally resolved temperature measurement of laser diode arrays

Carter, J. & Snyder, D. W., Dec 1 2005, Proceedings of the ASME Summer Heat Transfer Conference, HT 2005. p. 789-803 15 p. HT2005-72162. (Proceedings of the ASME Summer Heat Transfer Conference; vol. 4).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Temperature measurement
Semiconductor lasers
Wavelength
Temperature
Spectrographs