• 1879 Citations
  • 23 h-Index
1990 …2019

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Article
2019

Multi-wafer batch synthesis of graphene on Cu films by quasi-static flow chemical vapor deposition

Huet, B., Zhang, X., Redwing, J. M., Snyder, D. W. & Raskin, J. P., Aug 16 2019, In : 2D Materials. 6, 4, 045032.

Research output: Contribution to journalArticle

1 Scopus citations
2018

Atomic layer deposition of PbTiO3 and PbZrxTi1-xO3 films using metal alkyl and alkylamide precursors

Sbrockey, N. M., Tompa, G. S., Lavelle, R., Trumbull, K. A., Fanton, M. A., Snyder, D. W., Polcawich, R. G. & Potrepka, D. M., May 2 2018, In : Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 36, 3, 031509.

Research output: Contribution to journalArticle

3 Scopus citations

Thermal characterization of gallium oxide Schottky barrier diodes

Chatterjee, B., Jayawardena, A., Heller, E., Snyder, D. W., Dhar, S. & Choi, S., Nov 1 2018, In : Review of Scientific Instruments. 89, 11, 114903.

Research output: Contribution to journalArticle

10 Scopus citations
2014

Impact of copper overpressure on the synthesis of hexagonal boron nitride atomic layers

Bresnehan, M. S., Bhimanapati, G. R., Wang, K., Snyder, D. W. & Robinson, J. A., Oct 8 2014, In : ACS Applied Materials and Interfaces. 6, 19, p. 16755-16762 8 p.

Research output: Contribution to journalArticle

11 Scopus citations

Prospects of direct growth boron nitride films as substrates for graphene electronics

Bresnehan, M. S., Hollander, M. J., Wetherington, M., Wang, K., Miyagi, T., Pastir, G., Snyder, D. W., Gengler, J. J., Voevodin, A. A., Mitchel, W. C. & Robinson, J. A., Feb 14 2014, In : Journal of Materials Research. 29, 3, p. 459-471 13 p.

Research output: Contribution to journalArticle

30 Scopus citations

Short-channel graphene nanoribbon transistors with enhanced symmetry between p- and n-branches

Hollander, M. J., Madan, H., Shukla, N., Snyder, D. A., Robinson, J. A. & Datta, S., May 2014, In : Applied Physics Express. 7, 5, 055103.

Research output: Contribution to journalArticle

8 Scopus citations
2013

Heterogeneous integration of hexagonal boron nitride on bilayer quasi-free-standing epitaxial graphene and its impact on electrical transport properties

Hollander, M. J., Agrawal, A., Bresnehan, M. S., Labella, M., Trumbull, K. A., Cavalero, R., Snyder, D. W., Datta, S. & Robinson, J. A., Jun 1 2013, In : Physica Status Solidi (A) Applications and Materials Science. 210, 6, p. 1062-1070 9 p.

Research output: Contribution to journalArticle

9 Scopus citations
2012

Epitaxial graphene on SiC(0001̄): Stacking order and interfacial structure

Weng, X., Robinson, J. A., Trumbull, K., Cavalero, R., Fanton, M. A. & Snyder, D., Jan 16 2012, In : Applied Physics Letters. 100, 3, 031904.

Research output: Contribution to journalArticle

5 Scopus citations

Integration of hexagonal boron nitride with quasi-freestanding epitaxial graphene: Toward wafer-scale, high-performance devices

Bresnehan, M. S., Hollander, M. J., Wetherington, M., Labella, M., Trumbull, K. A., Cavalero, R., Snyder, D. W. & Robinson, J. A., Jun 26 2012, In : ACS nano. 6, 6, p. 5234-5241 8 p.

Research output: Contribution to journalArticle

85 Scopus citations

Substrate considerations for graphene synthesis on thin copper films

Howsare, C. A., Weng, X., Bojan, V., Snyder, D. W. & Robinson, J. A., Apr 6 2012, In : Nanotechnology. 23, 13, 135601.

Research output: Contribution to journalArticle

29 Scopus citations
2011

Characterization of graphene films and transistors grown on sapphire by metal-free chemical vapor deposition

Fanton, M. A., Robinson, J. A., Puls, C., Liu, Y., Hollander, M. J., Weiland, B. E., Labella, M., Trumbull, K., Kasarda, R., Howsare, C., Stitt, J. & Snyder, D. W., Oct 25 2011, In : ACS nano. 5, 10, p. 8062-8069 8 p.

Research output: Contribution to journalArticle

114 Scopus citations

Contacting graphene

Robinson, J. A., Labella, M., Zhu, M., Hollander, M., Kasarda, R., Hughes, Z., Trumbull, K., Cavalero, R. & Snyder, D., Jan 31 2011, In : Applied Physics Letters. 98, 5, 053103.

Research output: Contribution to journalArticle

257 Scopus citations

Dual temperature process for reduction in regrowth interfacial charge in AlGaN/GaN HEMTs grown on GaN substrates

Eichfeld, S. M., Won, D., Trumbull, K., Labella, M., Weng, X., Robinson, J. A., Snyder, D. W., Redwing, J. M., Paskova, T., Udwary, K., Mulholland, G., Preble, E. & Evans, K. R., Jul 1 2011, In : Physica Status Solidi (C) Current Topics in Solid State Physics. 8, 7-8, p. 2053-2055 3 p.

Research output: Contribution to journalArticle

2 Scopus citations

Effects of substrate orientation on the structural and electronic properties of epitaxial graphene on SiC(0001)

Robinson, J. A., Trumbull, K. A., Labella, M., Cavalero, R., Hollander, M. J., Zhu, M., Wetherington, M. T., Fanton, M. & Snyder, D. W., May 30 2011, In : Applied Physics Letters. 98, 22, 222109.

Research output: Contribution to journalArticle

20 Scopus citations

Enhanced transport and transistor performance with oxide seeded high-κ gate dielectrics on wafer-scale epitaxial graphene

Hollander, M. J., Labella, M., Hughes, Z. R., Zhu, M., Trumbull, K. A., Cavalero, R., Snyder, D. W., Wang, X., Hwang, E., Datta, S. & Robinson, J. A., Sep 14 2011, In : Nano letters. 11, 9, p. 3601-3607 7 p.

Research output: Contribution to journalArticle

82 Scopus citations

Epitaxial graphene transistors: Enhancing performance via hydrogen intercalation

Robinson, J. A., Hollander, M., Labella, M., Trumbull, K. A., Cavalero, R. & Snyder, D. W., Sep 14 2011, In : Nano letters. 11, 9, p. 3875-3880 6 p.

Research output: Contribution to journalArticle

116 Scopus citations

High temperature ReCOB piezocrystals: Recent developments

Zhang, S., Yu, F., Xia, R., Fei, Y., Frantz, E., Zhao, X., Yuan, D., Chai, B. H. T., Snyder, D. & Shrout, T. R., Mar 1 2011, In : Journal of Crystal Growth. 318, 1, p. 884-889 6 p.

Research output: Contribution to journalArticle

20 Scopus citations
2010

Effects of composition on dislocation microstructure and stress in Si-doped AlxGa1-xN

Manning, I. C., Weng, X., Fanton, M. A., Snyder, D. W. & Redwing, J. M., Apr 1 2010, In : Journal of Crystal Growth. 312, 8, p. 1301-1306 6 p.

Research output: Contribution to journalArticle

5 Scopus citations

Epitaxial graphene materials integration: Effects of dielectric overlayers on structural and electronic properties

Robinson, J. A., Labella, M., Trumbull, K. A., Weng, X., Cavelero, R., Daniels, T., Hughes, Z., Hollander, M., Fanton, M. A. & Snyder, D. W., May 25 2010, In : ACS Nano. 4, 5, p. 2667-2672 6 p.

Research output: Contribution to journalArticle

94 Scopus citations

Nucleation of epitaxial graphene on SiC(0001)

Robinson, J. A., Weng, X., Trumbull, K., Cavalero, R., Wetherington, M., Frantz, E., LaBella, M., Hughes, Z., Fanton, M. A. & Snyder, D. W., Jan 26 2010, In : ACS Nano. 4, 1, p. 153-158 6 p.

Research output: Contribution to journalArticle

117 Scopus citations

Structure of few-layer epitaxial graphene on 6H -SiC(0001) at atomic resolution

Weng, X., Robinson, J. A., Trumbull, K., Cavalero, R., Fanton, M. A. & Snyder, D. W., Nov 15 2010, In : Applied Physics Letters. 97, 20, 201905.

Research output: Contribution to journalArticle

25 Scopus citations
2009

Correlating raman spectral signatures with carrier mobility in epitaxial graphene: A guide to achieving high mobility on the wafer scale

Robinson, J. A., Wetherington, M., Tedesco, J. L., Campbell, P. M., Weng, X., Stitt, J., Fanton, M. A., Frantz, E., Snyder, D., VanMil, B. L., Jernigan, G. G., Rachael, L. M. W., Eddy, C. R. & Gaskill, D. K., Aug 12 2009, In : Nano letters. 9, 8, p. 2873-2876 4 p.

Research output: Contribution to journalArticle

147 Scopus citations

Modeling studies of an impinging jet reactor design for hybrid physical-chemical vapor deposition of superconducting MgB2 films

Lamborn, D. R., Wilke, R. H. T., Li, Q., Xi, X. X., Snyder, D. W. & Redwing, J. M., Mar 1 2009, In : Journal of Crystal Growth. 311, 6, p. 1501-1507 7 p.

Research output: Contribution to journalArticle

2 Scopus citations

Tensile stress generation and dislocation reduction in Si-doped Al x Ga1-x N films

Manning, I. C., Weng, X., Acord, J. D., Fanton, M. A., Snyder, D. W. & Redwing, J. M., Aug 12 2009, In : Journal of Applied Physics. 106, 2, 023506.

Research output: Contribution to journalArticle

36 Scopus citations
2008

Characterization of piezoelectric single crystal y Ca4 O(B O3)3 for high temperature applications

Zhang, S., Fei, Y., Chai, B. H. T., Frantz, E., Snyder, D. W., Jiang, X. & Shrout, T. R., May 30 2008, In : Applied Physics Letters. 92, 20, 202905.

Research output: Contribution to journalArticle

65 Scopus citations

Effects of a compositionally graded buffer layer on stress evolution during GaN and AlxGa1-xN MOCVD on SiC substrates

Acord, J. D., Weng, X., Dickey, E. C., Snyder, D. W. & Redwing, J. M., Apr 1 2008, In : Journal of Crystal Growth. 310, 7-9, p. 2314-2319 6 p.

Research output: Contribution to journalArticle

10 Scopus citations

Gadolinium calcium oxyborate piezoelectric single crystals for ultrahigh temperature (≥1000 °c) applications

Zhang, S., Frantz, E., Xia, R., Everson, W., Randi, III, J. A., Snyder, D. W. & Shrout, T. R., Nov 7 2008, In : Journal of Applied Physics. 104, 8, 084103.

Research output: Contribution to journalArticle

53 Scopus citations

Growth and characterization of high temperature La3Nb0.5Ga5.3Al0.2O14 (LNGA) and La3Ta0.5Ga5.3Al0.2O14 (LTGA) piezoelectric single crystals

Zhang, S., Yoshikawa, A., Kamada, K., Frantz, E., Xia, R., Snyder, D. W., Fukuda, T. & Shrout, T. R., Nov 1 2008, In : Solid State Communications. 148, 5-6, p. 213-216 4 p.

Research output: Contribution to journalArticle

46 Scopus citations

Growth of thick MgB2 films by impinging-jet hybrid physical-chemical vapor deposition

Lamborn, D. R., Wilke, R. H. T., Li, Q., Xi, A., Snyder, D. W. & Redwing, J. M., Jan 18 2008, In : Advanced Materials. 20, 2, p. 319-323 5 p.

Research output: Contribution to journalArticle

14 Scopus citations

High-temperature piezoelectric single crystal ReCa4O(BO 3)3 for sensor applications

Zhang, S., Fei, Y., Frantz, E., Snyder, D. W., Chai, B. H. T. & Shrout, T. R., Dec 1 2008, In : IEEE transactions on ultrasonics, ferroelectrics, and frequency control. 55, 12, p. 2703-2708 6 p.

Research output: Contribution to journalArticle

49 Scopus citations

In situ measurement of stress generation arising from dislocation inclination in AlxGa1-xN:Si thin films

Acord, J. D., Manning, I. C., Weng, X., Snyder, D. W. & Redwing, J. M., Sep 29 2008, In : Applied Physics Letters. 93, 11, 111910.

Research output: Contribution to journalArticle

21 Scopus citations
2007

Dual-heater reactor design for hybrid physical-chemical vapor deposition of MgB2 thin films

Lamborn, D. R., Wilke, R. H. T., Li, Q., Xi, X. X., Snyder, D. W. & Redwing, J. M., Jun 1 2007, In : IEEE Transactions on Applied Superconductivity. 17, 2, p. 2862-2866 5 p.

Research output: Contribution to journalArticle

5 Scopus citations

Modeling studies of the chemical vapor deposition of boron films from B2H6

Lamborn, D. R., Snyder, D. W., Xi, X. X. & Redwing, J. M., Feb 15 2007, In : Journal of Crystal Growth. 299, 2, p. 358-364 7 p.

Research output: Contribution to journalArticle

14 Scopus citations

Thermodynamic equilibrium limitations on the growth of SiC by halide chemical vapor deposition

Fanton, M. A., Weiland, B. E., Snyder, D. W. & Redwing, J. M., Jan 24 2007, In : Journal of Applied Physics. 101, 1, 014903.

Research output: Contribution to journalArticle

11 Scopus citations
2006

Growth of 6H-SiC crystals with low boron concentration

Fanton, M. A., Cavalero, R. L., Weiland, B. E., Ray, R. G., Snyder, D. W., Gamble, R. D., Oslosky, E. J. & Everson, W. J., Jan 25 2006, In : Journal of Crystal Growth. 287, 2, p. 363-366 4 p.

Research output: Contribution to journalArticle

2 Scopus citations

Growth of nitrogen-doped SiC boules by halide chemical vapor deposition

Fanton, M., Snyder, D., Weiland, B., Cavalero, R., Polyakov, A., Skowronski, M. & Chung, H., Jan 25 2006, In : Journal of Crystal Growth. 287, 2, p. 359-362 4 p.

Research output: Contribution to journalArticle

14 Scopus citations
2005

Bulk growth of high-purity 6H-SiC single crystals by halide chemical-vapor deposition

Chung, H. J., Polyakov, A. Y., Huh, S. W., Nigam, S., Skowronski, M., Fanton, M. A., Weiland, B. E. & Snyder, D. W., Apr 27 2005, In : Journal of Applied Physics. 97, 8, 084913.

Research output: Contribution to journalArticle

34 Scopus citations

Growth kinetics study in halide chemical vapor deposition of SiC

Nigam, S., Chung, H. J., Polyakov, A. Y., Fanton, M. A., Weiland, B. E., Snyder, D. W. & Skowronski, M., Oct 15 2005, In : Journal of Crystal Growth. 284, 1-2, p. 112-122 11 p.

Research output: Contribution to journalArticle

26 Scopus citations
2004

Electrical nonuniformities and their impact on the electron mobility in semi-insulating SiC crystals

Li, Q., Polyakov, A. Y., Skowronski, M., Roth, M. D., Fanton, M. A. & Snyder, D. W., Jul 1 2004, In : Journal of Applied Physics. 96, 1, p. 411-414 4 p.

Research output: Contribution to journalArticle

12 Scopus citations

In situ stress measurements during MOCVD growth of AlGaN on SiC

Acord, J. D., Raghavan, S., Snyder, D. W. & Redwing, J. M., Dec 10 2004, In : Journal of Crystal Growth. 272, 1-4 SPEC. ISS., p. 65-71 7 p.

Research output: Contribution to journalArticle

27 Scopus citations
2000

Formation of thermal decomposition cavities in physical vapor transport of silicon carbide

Sanchez, E. K., Kuhr, T., Heydemann, V. D., Snyder, D. W., Rohrer, G. S. & Skowronski, M., Mar 2000, In : Journal of Electronic Materials. 29, 3, p. 347-352 6 p.

Research output: Contribution to journalArticle

18 Scopus citations
1992

On the rate and uniformity of CdTe deposition in an impinging jet reactor: experimental results

Snyder, D. W., Sides, P. J. & Ko, E. I., Sep 1992, In : Journal of Crystal Growth. 123, 1-2, p. 163-173 11 p.

Research output: Contribution to journalArticle

2 Scopus citations

On the rate and uniformity of CdTe deposition in an impinging jet reactor: numerical simulations

Snyder, D. W., Sides, P. J. & Ko, E. I., Aug 1 1992, In : Journal of Crystal Growth. 121, 4, p. 631-642 12 p.

Research output: Contribution to journalArticle

5 Scopus citations
3 Scopus citations
1991

Effect of substrate misorientation on surface morphology of homoepitaxial CdTe films grown by organometallic vapor phase epitaxy

Snyder, D. W., Mahajan, S., Ko, E. I. & Sides, P. J., Dec 1 1991, In : Applied Physics Letters. 58, 8, p. 848-850 3 p.

Research output: Contribution to journalArticle

26 Scopus citations
1990

A comparison of Hg1-xCdxTe MOCVD films on lattice-matched (CdZn)Te and Cd(TeSe) substrates

Bevan, M. J., Doyle, N. J. & Snyder, D. W., Jun 1 1990, In : Journal of Crystal Growth. 102, 4, p. 785-792 8 p.

Research output: Contribution to journalArticle

10 Scopus citations

Growth of CdTe by organometallic vapor phase epitaxy in an impinging jet reactor

Snyder, D. W., Ko, E. I., Sides, P. J. & Mahajan, S., Dec 1 1990, In : Applied Physics Letters. 56, 12, p. 1166-1168 3 p.

Research output: Contribution to journalArticle

12 Scopus citations