• 1852 Citations
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1990 …2019
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Research Output 1990 2019

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2019

Multi-wafer batch synthesis of graphene on Cu films by quasi-static flow chemical vapor deposition

Huet, B., Zhang, X., Redwing, J. M., Snyder, D. W. & Raskin, J. P., Aug 16 2019, In : 2D Materials. 6, 4, 045032.

Research output: Contribution to journalArticle

Graphite
Graphene
Chemical vapor deposition
graphene
vapor deposition
2018
3 Citations (Scopus)

Atomic layer deposition of PbTiO3 and PbZrxTi1-xO3 films using metal alkyl and alkylamide precursors

Sbrockey, N. M., Tompa, G. S., Lavelle, R., Trumbull, K. A., Fanton, M. A., Snyder, D. W., Polcawich, R. G. & Potrepka, D. M., May 2 2018, In : Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 36, 3, 031509.

Research output: Contribution to journalArticle

Atomic layer deposition
atomic layer epitaxy
metal films
Metals
Zirconium
8 Citations (Scopus)

Thermal characterization of gallium oxide Schottky barrier diodes

Chatterjee, B., Jayawardena, A., Heller, E., Snyder, D. W., Dhar, S. & Choi, S., Nov 1 2018, In : Review of Scientific Instruments. 89, 11, 114903.

Research output: Contribution to journalArticle

Schottky barrier diodes
gallium oxides
Gallium
Schottky diodes
Oxides
2014
11 Citations (Scopus)

Impact of copper overpressure on the synthesis of hexagonal boron nitride atomic layers

Bresnehan, M. S., Bhimanapati, G. R., Wang, K., Snyder, D. W. & Robinson, J. A., Oct 8 2014, In : ACS Applied Materials and Interfaces. 6, 19, p. 16755-16762 8 p.

Research output: Contribution to journalArticle

Boron nitride
Copper
Fullerenes
Metal foil
Chemical vapor deposition
29 Citations (Scopus)

Prospects of direct growth boron nitride films as substrates for graphene electronics

Bresnehan, M. S., Hollander, M. J., Wetherington, M., Wang, K., Miyagi, T., Pastir, G., Snyder, D. W., Gengler, J. J., Voevodin, A. A., Mitchel, W. C. & Robinson, J. A., Feb 14 2014, In : Journal of Materials Research. 29, 3, p. 459-471 13 p.

Research output: Contribution to journalArticle

Graphite
Boron nitride
boron nitrides
Graphene
graphene
8 Citations (Scopus)

Short-channel graphene nanoribbon transistors with enhanced symmetry between p- and n-branches

Hollander, M. J., Madan, H., Shukla, N., Snyder, D. A., Robinson, J. A. & Datta, S., May 2014, In : Applied Physics Express. 7, 5, 055103.

Research output: Contribution to journalArticle

Nanoribbons
Graphene
graphene
Transistors
transistors
2013
9 Citations (Scopus)

Heterogeneous integration of hexagonal boron nitride on bilayer quasi-free-standing epitaxial graphene and its impact on electrical transport properties

Hollander, M. J., Agrawal, A., Bresnehan, M. S., Labella, M., Trumbull, K. A., Cavalero, R., Snyder, D. W., Datta, S. & Robinson, J. A., Jun 1 2013, In : Physica Status Solidi (A) Applications and Materials Science. 210, 6, p. 1062-1070 9 p.

Research output: Contribution to journalArticle

Graphite
Boron nitride
boron nitrides
Transport properties
Graphene
2012
5 Citations (Scopus)

Epitaxial graphene on SiC(0001̄): Stacking order and interfacial structure

Weng, X., Robinson, J. A., Trumbull, K., Cavalero, R., Fanton, M. A. & Snyder, D. W., Jan 16 2012, In : Applied Physics Letters. 100, 3, 031904.

Research output: Contribution to journalArticle

graphene
transmission electron microscopy
interlayers
spacing
electron diffraction
84 Citations (Scopus)

Integration of hexagonal boron nitride with quasi-freestanding epitaxial graphene: Toward wafer-scale, high-performance devices

Bresnehan, M. S., Hollander, M. J., Wetherington, M., Labella, M., Trumbull, K. A., Cavalero, R., Snyder, D. W. & Robinson, J. A., Jun 26 2012, In : ACS nano. 6, 6, p. 5234-5241 8 p.

Research output: Contribution to journalArticle

Graphite
Boron nitride
boron nitrides
Graphene
graphene
28 Citations (Scopus)

Substrate considerations for graphene synthesis on thin copper films

Howsare, C. A., Weng, X., Bojan, V., Snyder, D. W. & Robinson, J. A., Apr 6 2012, In : Nanotechnology. 23, 13, 135601.

Research output: Contribution to journalArticle

Graphite
Graphene
Copper
Substrates
Chemical vapor deposition
2011
109 Citations (Scopus)

Characterization of graphene films and transistors grown on sapphire by metal-free chemical vapor deposition

Fanton, M. A., Robinson, J. A., Puls, C., Liu, Y., Hollander, M. J., Weiland, B. E., Labella, M., Trumbull, K., Kasarda, R., Howsare, C., Stitt, J. & Snyder, D. W., Oct 25 2011, In : ACS nano. 5, 10, p. 8062-8069 8 p.

Research output: Contribution to journalArticle

Graphite
Aluminum Oxide
Sapphire
Graphene
Chemical vapor deposition
255 Citations (Scopus)

Contacting graphene

Robinson, J. A., Labella, M., Zhu, M., Hollander, M., Kasarda, R., Hughes, Z., Trumbull, K., Cavalero, R. & Snyder, D., Jan 31 2011, In : Applied Physics Letters. 98, 5, 053103.

Research output: Contribution to journalArticle

electric contacts
graphene
contact resistance
metals
high speed
2 Citations (Scopus)

Dual temperature process for reduction in regrowth interfacial charge in AlGaN/GaN HEMTs grown on GaN substrates

Eichfeld, S. M., Won, D., Trumbull, K., Labella, M., Weng, X., Robinson, J. A., Snyder, D. W., Redwing, J. M., Paskova, T., Udwary, K., Mulholland, G., Preble, E. & Evans, K. R., Jul 1 2011, In : Physica Status Solidi (C) Current Topics in Solid State Physics. 8, 7-8, p. 2053-2055 3 p.

Research output: Contribution to journalArticle

high electron mobility transistors
temperature compensation
metalorganic chemical vapor deposition
temperature
electrical properties
20 Citations (Scopus)

Effects of substrate orientation on the structural and electronic properties of epitaxial graphene on SiC(0001)

Robinson, J. A., Trumbull, K. A., Labella, M., Cavalero, R., Hollander, M. J., Zhu, M., Wetherington, M. T., Fanton, M. A. & Snyder, D. W., May 30 2011, In : Applied Physics Letters. 98, 22, 222109.

Research output: Contribution to journalArticle

silicon carbides
graphene
electronics
wafers
carrier mobility
81 Citations (Scopus)

Enhanced transport and transistor performance with oxide seeded high-κ gate dielectrics on wafer-scale epitaxial graphene

Hollander, M. J., Labella, M., Hughes, Z. R., Zhu, M., Trumbull, K. A., Cavalero, R., Snyder, D. W., Wang, X., Hwang, E., Datta, S. & Robinson, J. A., Sep 14 2011, In : Nano letters. 11, 9, p. 3601-3607 7 p.

Research output: Contribution to journalArticle

Graphite
Gate dielectrics
Oxides
Graphene
graphene
112 Citations (Scopus)

Epitaxial graphene transistors: Enhancing performance via hydrogen intercalation

Robinson, J. A., Hollander, M., Labella, M., Trumbull, K. A., Cavalero, R. & Snyder, D. W., Sep 14 2011, In : Nano Letters. 11, 9, p. 3875-3880 6 p.

Research output: Contribution to journalArticle

Intercalation
intercalation
Hydrogen
Buffers
graphene
19 Citations (Scopus)

High temperature ReCOB piezocrystals: Recent developments

Zhang, S., Yu, F., Xia, R., Fei, Y., Frantz, E., Zhao, X., Yuan, D., Chai, B. H. T., Snyder, D. W. & Shrout, T. R., Mar 1 2011, In : Journal of Crystal Growth. 318, 1, p. 884-889 6 p.

Research output: Contribution to journalArticle

Crystals
crystals
Temperature
electrical resistivity
temperature
2010
5 Citations (Scopus)

Effects of composition on dislocation microstructure and stress in Si-doped AlxGa1-xN

Manning, I. C., Weng, X., Fanton, M. A., Snyder, D. W. & Redwing, J. M., Apr 1 2010, In : Journal of Crystal Growth. 312, 8, p. 1301-1306 6 p.

Research output: Contribution to journalArticle

Epilayers
Tensile stress
inclination
Transmission electron microscopy
Defects
94 Citations (Scopus)

Epitaxial graphene materials integration: Effects of dielectric overlayers on structural and electronic properties

Robinson, J. A., Labella, M., Trumbull, K. A., Weng, X., Cavelero, R., Daniels, T., Hughes, Z., Hollander, M., Fanton, M. A. & Snyder, D. W., May 25 2010, In : ACS Nano. 4, 5, p. 2667-2672 6 p.

Research output: Contribution to journalArticle

Graphite
Electronic properties
Graphene
Structural properties
graphene
117 Citations (Scopus)

Nucleation of epitaxial graphene on SiC(0001)

Robinson, J. A., Weng, X., Trumbull, K., Cavalero, R., Wetherington, M., Frantz, E., LaBella, M., Hughes, Z., Fanton, M. A. & Snyder, D. W., Jan 26 2010, In : ACS Nano. 4, 1, p. 153-158 6 p.

Research output: Contribution to journalArticle

Graphite
Graphene
graphene
Nucleation
nucleation
25 Citations (Scopus)

Structure of few-layer epitaxial graphene on 6H -SiC(0001) at atomic resolution

Weng, X., Robinson, J. A., Trumbull, K., Cavalero, R., Fanton, M. A. & Snyder, D. W., Nov 15 2010, In : Applied Physics Letters. 97, 20, 201905.

Research output: Contribution to journalArticle

graphene
interlayers
discontinuity
graphite
spacing
2009
142 Citations (Scopus)

Correlating raman spectral signatures with carrier mobility in epitaxial graphene: A guide to achieving high mobility on the wafer scale

Robinson, J. A., Wetherington, M., Tedesco, J. L., Campbell, P. M., Weng, X., Stitt, J., Fanton, M. A., Frantz, E., Snyder, D., VanMil, B. L., Jernigan, G. G., Rachael, L. M. W., Eddy, C. R. & Gaskill, D. K., Aug 12 2009, In : Nano letters. 9, 8, p. 2873-2876 4 p.

Research output: Contribution to journalArticle

spectral signatures
Graphite
Carrier mobility
carrier mobility
Silicon carbide
2 Citations (Scopus)

Modeling studies of an impinging jet reactor design for hybrid physical-chemical vapor deposition of superconducting MgB2 films

Lamborn, D. R., Wilke, R. H. T., Li, Q., Xi, X. X., Snyder, D. W. & Redwing, J. M., Mar 1 2009, In : Journal of Crystal Growth. 311, 6, p. 1501-1507 7 p.

Research output: Contribution to journalArticle

reactor design
Superconducting films
Physical vapor deposition
superconducting films
Boron
36 Citations (Scopus)

Tensile stress generation and dislocation reduction in Si-doped Al x Ga1-x N films

Manning, I. C., Weng, X., Acord, J. D., Fanton, M. A., Snyder, D. W. & Redwing, J. M., Aug 12 2009, In : Journal of Applied Physics. 106, 2, 023506.

Research output: Contribution to journalArticle

tensile stress
inclination
metalorganic chemical vapor deposition
proportion
curvature
2008
63 Citations (Scopus)

Characterization of piezoelectric single crystal y Ca4 O(B O3)3 for high temperature applications

Zhang, S., Fei, Y., Chai, B. H. T., Frantz, E., Snyder, D. W., Jiang, X. & Shrout, T. R., May 30 2008, In : Applied Physics Letters. 92, 20, 202905.

Research output: Contribution to journalArticle

piezoelectric crystals
single crystals
temperature
smart structures
yttrium
10 Citations (Scopus)

Effects of a compositionally graded buffer layer on stress evolution during GaN and AlxGa1-xN MOCVD on SiC substrates

Acord, J. D., Weng, X., Dickey, E. C., Snyder, D. W. & Redwing, J. M., Apr 1 2008, In : Journal of Crystal Growth. 310, 7-9, p. 2314-2319 6 p.

Research output: Contribution to journalArticle

Organic Chemicals
Organic chemicals
Buffer layers
metalorganic chemical vapor deposition
Chemical vapor deposition
53 Citations (Scopus)

Gadolinium calcium oxyborate piezoelectric single crystals for ultrahigh temperature (≥1000 °c) applications

Zhang, S., Frantz, E., Xia, R., Everson, W., Randi, III, J. A., Snyder, D. W. & Shrout, T. R., Nov 7 2008, In : Journal of Applied Physics. 104, 8, 084103.

Research output: Contribution to journalArticle

piezoelectric crystals
gadolinium
calcium
single crystals
crystals
46 Citations (Scopus)

Growth and characterization of high temperature La3Nb0.5Ga5.3Al0.2O14 (LNGA) and La3Ta0.5Ga5.3Al0.2O14 (LTGA) piezoelectric single crystals

Zhang, S., Yoshikawa, A., Kamada, K., Frantz, E., Xia, R., Snyder, D. W., Fukuda, T. & Shrout, T. R., Nov 1 2008, In : Solid State Communications. 148, 5-6, p. 213-216 4 p.

Research output: Contribution to journalArticle

piezoelectric crystals
Single crystals
single crystals
operators
Crystals
14 Citations (Scopus)

Growth of thick MgB2 films by impinging-jet hybrid physical-chemical vapor deposition

Lamborn, D. R., Wilke, R. H. T., Li, Q., Xi, A., Snyder, D. W. & Redwing, J. M., Jan 18 2008, In : Advanced Materials. 20, 2, p. 319-323 5 p.

Research output: Contribution to journalArticle

Physical vapor deposition
Thick films
Chemical vapor deposition
Thin films
Superconducting materials
49 Citations (Scopus)

High-temperature piezoelectric single crystal ReCa4O(BO 3)3 for sensor applications

Zhang, S., Fei, Y., Frantz, E., Snyder, D. W., Chai, B. H. T. & Shrout, T. R., Dec 1 2008, In : IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control. 55, 12, p. 2703-2708 6 p.

Research output: Contribution to journalArticle

piezoelectric crystals
Single crystals
sensors
single crystals
Sensors
21 Citations (Scopus)

In situ measurement of stress generation arising from dislocation inclination in AlxGa1-xN:Si thin films

Acord, J. D., Manning, I. C., Weng, X., Snyder, D. W. & Redwing, J. M., Sep 29 2008, In : Applied Physics Letters. 93, 11, 111910.

Research output: Contribution to journalArticle

in situ measurement
inclination
thin films
tensile stress
metalorganic chemical vapor deposition
2007
5 Citations (Scopus)

Dual-heater reactor design for hybrid physical-chemical vapor deposition of MgB2 thin films

Lamborn, D. R., Wilke, R. H. T., Li, Q., Xi, X. X., Snyder, D. W. & Redwing, J. M., Jun 1 2007, In : IEEE Transactions on Applied Superconductivity. 17, 2, p. 2862-2866 5 p.

Research output: Contribution to journalArticle

reactor design
Physical vapor deposition
heaters
Chemical vapor deposition
vapor deposition
14 Citations (Scopus)

Modeling studies of the chemical vapor deposition of boron films from B2H6

Lamborn, D. R., Snyder, D. W., Xi, X. X. & Redwing, J. M., Feb 15 2007, In : Journal of Crystal Growth. 299, 2, p. 358-364 7 p.

Research output: Contribution to journalArticle

Boron
Chemical vapor deposition
boron
vapor deposition
Boranes
11 Citations (Scopus)

Thermodynamic equilibrium limitations on the growth of SiC by halide chemical vapor deposition

Fanton, M. A., Weiland, B. E., Snyder, D. W. & Redwing, J. M., Jan 24 2007, In : Journal of Applied Physics. 101, 1, 014903.

Research output: Contribution to journalArticle

thermodynamic equilibrium
halides
vapor deposition
single crystals
vapor phases
2006
2 Citations (Scopus)

Growth of 6H-SiC crystals with low boron concentration

Fanton, M. A., Cavalero, R. L., Weiland, B. E., Ray, R. G., Snyder, D. W., Gamble, R. D., Oslosky, E. J. & Everson, W. J., Jan 25 2006, In : Journal of Crystal Growth. 287, 2, p. 363-366 4 p.

Research output: Contribution to journalArticle

Boron
boron
boules
Atoms
Crystals
14 Citations (Scopus)

Growth of nitrogen-doped SiC boules by halide chemical vapor deposition

Fanton, M. A., Snyder, D. W., Weiland, B., Cavalero, R., Polyakov, A., Skowronski, M. & Chung, H., Jan 25 2006, In : Journal of Crystal Growth. 287, 2, p. 359-362 4 p.

Research output: Contribution to journalArticle

boules
halides
Chemical vapor deposition
Nitrogen
vapor deposition
2005
34 Citations (Scopus)

Bulk growth of high-purity 6H-SiC single crystals by halide chemical-vapor deposition

Chung, H. J., Polyakov, A. Y., Huh, S. W., Nigam, S., Skowronski, M., Fanton, M. A., Weiland, B. E. & Snyder, D. W., Apr 27 2005, In : Journal of Applied Physics. 97, 8, 084913.

Research output: Contribution to journalArticle

halides
purity
silicon tetrachloride
vapor deposition
single crystals
26 Citations (Scopus)

Growth kinetics study in halide chemical vapor deposition of SiC

Nigam, S., Chung, H. J., Polyakov, A. Y., Fanton, M. A., Weiland, B. E., Snyder, D. W. & Skowronski, M., Oct 15 2005, In : Journal of Crystal Growth. 284, 1-2, p. 112-122 11 p.

Research output: Contribution to journalArticle

Growth kinetics
halides
Chemical vapor deposition
vapor deposition
Silicon
2004
25 Citations (Scopus)

Chemi-mechanical polishing of on-axis semi-insulating SiC substrates

Heydemann, V. D., Everson, W. J., Gamble, R. D., Snyder, D. W. & Skowronski, M., 2004, In : Materials Science Forum. 457-460, II, p. 805-808 4 p.

Research output: Contribution to journalArticle

abrasives
Polishing
polishing
Abrasives
Silicon Dioxide
12 Citations (Scopus)

Electrical nonuniformities and their impact on the electron mobility in semi-insulating SiC crystals

Li, Q., Polyakov, A. Y., Skowronski, M., Roth, M. D., Fanton, M. A. & Snyder, D. W., Jul 1 2004, In : Journal of Applied Physics. 96, 1, p. 411-414 4 p.

Research output: Contribution to journalArticle

electron mobility
nonuniformity
wafers
vapors
vapor deposition
27 Citations (Scopus)

In situ stress measurements during MOCVD growth of AlGaN on SiC

Acord, J. D., Raghavan, S., Snyder, D. W. & Redwing, J. M., Dec 10 2004, In : Journal of Crystal Growth. 272, 1-4 SPEC. ISS., p. 65-71 7 p.

Research output: Contribution to journalArticle

stress measurement
Stress measurement
Metallorganic chemical vapor deposition
metalorganic chemical vapor deposition
Buffer layers
2000
18 Citations (Scopus)

Formation of thermal decomposition cavities in physical vapor transport of silicon carbide

Sanchez, E. K., Kuhr, T., Heydemann, V. D., Snyder, D. W., Rohrer, G. S. & Skowronski, M., Jan 1 2000, In : Journal of Electronic Materials. 29, 3, p. 347-352 6 p.

Research output: Contribution to journalArticle

Silicon carbide
silicon carbides
thermal decomposition
Seed
seeds
1992
5 Citations (Scopus)

On the rate and uniformity of CdTe deposition in an impinging jet reactor: numerical simulations

Snyder, D. W., Sides, P. J. & Ko, E. I., Aug 1 1992, In : Journal of Crystal Growth. 121, 4, p. 631-642 12 p.

Research output: Contribution to journalArticle

reactors
outlets
nozzles
Nozzles
Computer simulation
2 Citations (Scopus)

On the rate and uniformity of CdTe deposition in an impinging jet reactor: experimental results

Snyder, D. W., Sides, P. J. & Ko, E. I., Sep 1992, In : Journal of Crystal Growth. 123, 1-2, p. 163-173 11 p.

Research output: Contribution to journalArticle

Experimental reactors
Hydrogen
reactors
Noble Gases
Cadmium telluride
3 Citations (Scopus)
Cadmium telluride
Helium
cadmium tellurides
Nitrogen
Gases
1991
25 Citations (Scopus)

Effect of substrate misorientation on surface morphology of homoepitaxial CdTe films grown by organometallic vapor phase epitaxy

Snyder, D. W., Mahajan, S., Ko, E. I. & Sides, P. J., Dec 1 1991, In : Applied Physics Letters. 58, 8, p. 848-850 3 p.

Research output: Contribution to journalArticle

vapor phase epitaxy
misalignment
poles
spherical caps
curves
1990
10 Citations (Scopus)

A comparison of Hg1-xCdxTe MOCVD films on lattice-matched (CdZn)Te and Cd(TeSe) substrates

Bevan, M. J., Doyle, N. J. & Snyder, D. W., Jun 1 1990, In : Journal of Crystal Growth. 102, 4, p. 785-792 8 p.

Research output: Contribution to journalArticle

Metallorganic chemical vapor deposition
metalorganic chemical vapor deposition
Tellurium
Epilayers
Twinning
12 Citations (Scopus)

Growth of CdTe by organometallic vapor phase epitaxy in an impinging jet reactor

Snyder, D. W., Ko, E. I., Sides, P. J. & Mahajan, S., Dec 1 1990, In : Applied Physics Letters. 56, 12, p. 1166-1168 3 p.

Research output: Contribution to journalArticle

vapor phase epitaxy
reactors
curves
temperature
plots