• 88 Citations
  • 6 h-Index
20052018

Research output per year

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Research Output

  • 88 Citations
  • 6 h-Index
  • 5 Conference contribution
  • 5 Article
  • 1 Paper

Fabrication and Diffraction Efficiency of a Large-format, Replicated X-Ray Reflection Grating

Miles, D. M., McCoy, J. A., McEntaffer, R. L., Eichfeld, C. M., Lavallee, G., Labella, M., Drawl, W., Liu, B., Deroo, C. T. & Steiner, T., Dec 20 2018, In : Astrophysical Journal. 869, 2, 95.

Research output: Contribution to journalArticle

  • 10 Scopus citations

    Phase-Transition-FET exhibiting steep switching slope of 8mV/decade and 36% enhanced on current

    Frougier, J., Shukla, N., Deng, D., Jerry, M., Aziz, A., Liu, L., Lavallee, G., Mayer, T. S., Gupta, S. & Datta, S., Sep 21 2016, 2016 IEEE Symposium on VLSI Technology, VLSI Technology 2016. Institute of Electrical and Electronics Engineers Inc., 7573445. (Digest of Technical Papers - Symposium on VLSI Technology; vol. 2016-September).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

  • 22 Scopus citations

    Enhancement mode strained (1.3%) germanium quantum well FinFET (WFin=20nm) with high mobility (μHole=700 cm2/Vs), low EOT (∼0.7nm) on bulk silicon substrate

    Agrawal, A., Barth, M., Rayner, G. B., Arun, V. T., Eichfeld, C., Lavallee, G., Yu, S. Y., Sang, X., Brookes, S., Zheng, Y., Lee, Y. J., Lin, Y. R., Wu, C. H., Ko, C. H., LeBeau, J., Engel-Herbert, R., Mohney, S. E., Yeo, Y. C. & Datta, S., Feb 20 2015, 2014 IEEE International Electron Devices Meeting, IEDM 2014. February ed. Institute of Electrical and Electronics Engineers Inc., p. 16.4.1-16.4.4 7047064. (Technical Digest - International Electron Devices Meeting, IEDM; vol. 2015-February, no. February).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

  • Impact of sidewall passivation and channel composition on InxGa1-xAs FinFET performance

    Thathachary, A. V., Lavallee, G., Cantoro, M., Bhuwalka, K. K., Heo, Y. C., Maeda, S. & Datta, S., Feb 1 2015, In : IEEE Electron Device Letters. 36, 2, p. 117-119 3 p., 6991559.

    Research output: Contribution to journalArticle

  • 11 Scopus citations

    Indium arsenide (InAs) single and dual quantum-well heterostructure FinFETs

    Thathachary, A. V., Agrawal, N., Bhuwalka, K. K., Cantoro, M., Heo, Y. C., Lavallee, G., Maeda, S. & Datta, S., Aug 25 2015, 2015 Symposium on VLSI Technology, VLSI Technology 2015 - Digest of Technical Papers. Institute of Electrical and Electronics Engineers Inc., p. T208-T209 7223677. (Digest of Technical Papers - Symposium on VLSI Technology; vol. 2015-August).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

  • 14 Scopus citations