• 70 Citations
  • 5 h-Index
20052018
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Fingerprint Dive into the research topics where Guy Lavallee is active. These topic labels come from the works of this person. Together they form a unique fingerprint.

  • 1 Similar Profiles
Semiconductor quantum wells Engineering & Materials Science
Quantum confinement Engineering & Materials Science
Indium Engineering & Materials Science
Indium arsenide Engineering & Materials Science
Gold Engineering & Materials Science
Germanium Chemical Compounds
fabrication Physics & Astronomy
Hole mobility Engineering & Materials Science

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Research Output 2005 2018

  • 70 Citations
  • 5 h-Index
  • 5 Conference contribution
  • 5 Article
  • 1 Paper
1 Citation (Scopus)

Fabrication and Diffraction Efficiency of a Large-format, Replicated X-Ray Reflection Grating

Miles, D. M., McCoy, J. A., McEntaffer, R. L., Eichfeld, C., Lavallee, G., Labella, M., Drawl, W., Liu, B., Deroo, C. T. & Steiner, T., Dec 20 2018, In : Astrophysical Journal. 869, 2, 95.

Research output: Contribution to journalArticle

diffraction
format
gratings
fabrication
x rays
20 Citations (Scopus)

Phase-Transition-FET exhibiting steep switching slope of 8mV/decade and 36% enhanced on current

Frougier, J., Shukla, N., Deng, D., Jerry, M., Aziz, A., Liu, L., Lavallee, G., Mayer, T. S., Gupta, S. K. & Datta, S., Sep 21 2016, 2016 IEEE Symposium on VLSI Technology, VLSI Technology 2016. Institute of Electrical and Electronics Engineers Inc., 7573445. (Digest of Technical Papers - Symposium on VLSI Technology; vol. 2016-September).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Field effect transistors
Phase transitions
Vanadium
Switches
Silicon
3 Citations (Scopus)

Enhancement mode strained (1.3%) germanium quantum well FinFET (WFin=20nm) with high mobility (μHole=700 cm2/Vs), low EOT (∼0.7nm) on bulk silicon substrate

Agrawal, A., Barth, M., Rayner, G. B., Arun, V. T., Eichfeld, C., Lavallee, G., Yu, S. Y., Sang, X., Brookes, S., Zheng, Y., Lee, Y. J., Lin, Y. R., Wu, C. H., Ko, C. H., LeBeau, J., Engel-Herbert, R., Mohney, S. E., Yeo, Y. C. & Datta, S., Feb 20 2015, 2014 IEEE International Electron Devices Meeting, IEDM 2014. February ed. Institute of Electrical and Electronics Engineers Inc., p. 16.4.1-16.4.4 7047064. (Technical Digest - International Electron Devices Meeting, IEDM; vol. 2015-February, no. February).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Germanium
Hole mobility
hole mobility
Silicon
Semiconductor quantum wells
10 Citations (Scopus)

Impact of sidewall passivation and channel composition on InxGa1-xAs FinFET performance

Thathachary, A. V., Lavallee, G., Cantoro, M., Bhuwalka, K. K., Heo, Y. C., Maeda, S. & Datta, S., Feb 1 2015, In : IEEE Electron Device Letters. 36, 2, p. 117-119 3 p., 6991559.

Research output: Contribution to journalArticle

Indium
Passivation
Quantum confinement
Chemical analysis
Capacitance measurement
11 Citations (Scopus)

Indium arsenide (InAs) single and dual quantum-well heterostructure FinFETs

Thathachary, A. V., Agrawal, N., Bhuwalka, K. K., Cantoro, M., Heo, Y. C., Lavallee, G., Maeda, S. & Datta, S., Aug 25 2015, 2015 Symposium on VLSI Technology, VLSI Technology 2015 - Digest of Technical Papers. Institute of Electrical and Electronics Engineers Inc., p. T208-T209 7223677. (Digest of Technical Papers - Symposium on VLSI Technology; vol. 2015-August).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Indium arsenide
Semiconductor quantum wells
Heterojunctions
FinFET
Aspect ratio