• 9953 Citations
  • 57 h-Index
1991 …2019
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Fingerprint Dive into the research topics where Joan Marie Redwing is active. These topic labels come from the works of this person. Together they form a unique fingerprint.

  • 11 Similar Profiles
Nanowires Engineering & Materials Science
Silicon Chemical Compounds
nanowires Physics & Astronomy
Chemical vapor deposition Engineering & Materials Science
metalorganic chemical vapor deposition Physics & Astronomy
thin films Physics & Astronomy
vapor deposition Physics & Astronomy
Aluminum Oxide Chemical Compounds

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Research Output 1991 2019

16 Citations (Scopus)

A roadmap for electronic grade 2D materials

Briggs, N., Subramanian, S., Lin, Z., Li, X., Zhang, X., Zhang, K., Xiao, K., Geohegan, D., Wallace, R., Chen, L. Q., Terrones, M., Ebrahimi, A., Das, S., Redwing, J., Hinkle, C., Momeni, K., Van Duin, A., Crespi, V., Kar, S. & Robinson, J. A., Jan 17 2019, In : 2D Materials. 6, 2, 022001.

Research output: Contribution to journalReview article

Open Access
molybdenum disulfides
2 Citations (Scopus)

Atomic layer deposition of ZnO on MoS 2 and WSe 2

Walter, T. N., Lee, S., Zhang, X., Chubarov, M., Redwing, J. M., Jackson, T. N. & Mohney, S. E., Jun 30 2019, In : Applied Surface Science. 480, p. 43-51 9 p.

Research output: Contribution to journalArticle

Atomic layer deposition
Semiconductor devices
9 Citations (Scopus)

Defect-Controlled Nucleation and Orientation of WSe 2 on hBN: A Route to Single-Crystal Epitaxial Monolayers

Zhang, X., Zhang, F., Wang, Y., Schulman, D. S., Zhang, T., Bansal, A., Alem, N., Das, S., Crespi, V. H., Terrones Maldonado, M. & Redwing, J. M., Mar 26 2019, In : ACS nano. 13, 3, p. 3341-3352 12 p.

Research output: Contribution to journalArticle

Single crystals
1 Citation (Scopus)

Effect of Ge doping on growth stress and conductivity in Al x Ga 1-x N

Bansal, A., Wang, K., Lundh, J. S., Choi, S. & Redwing, J. M., Apr 8 2019, In : Applied Physics Letters. 114, 14, 142101.

Research output: Contribution to journalArticle

Open Access
tensile stress

GaN Heteroepitaxy on Strain-Engineered (111) Si/Si 1−x Ge x

Bansal, A., Martin, N. C., Wang, K. & Redwing, J. M., Jan 1 2019, In : Journal of Electronic Materials.

Research output: Contribution to journalArticle

Epitaxial growth
stress measurement