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1991 …2020
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Research Output 1991 2020

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Conference article
2005
5 Citations (Scopus)

Fabrication and electrical characterization of silicon nanowire arrays

Dilts, S. M., Mohmmad, A., Lew, K. K., Redwing, J. M. & Mohney, S. E., Aug 25 2005, In : Materials Research Society Symposium Proceedings. 832, p. 287-292 6 p., F9.10.

Research output: Contribution to journalConference article

Silicon
Nanowires
nanowires
Fabrication
fabrication
8 Citations (Scopus)

High density group iv semiconductor nanowire arrays fabricated in nanoporous alumina templates

Redwing, J. M., Dilts, S. M., Lew, K. K., Cranmer, A. & Mohney, S. E., Dec 1 2005, In : Proceedings of SPIE - The International Society for Optical Engineering. 6003, 60030S.

Research output: Contribution to journalConference article

Alumina
Aluminum Oxide
Nanowires
Template
Semiconductors
2004

Epitaxial growth of magnesium diboride thin films by hybrid physical-chemical vapor deposition

Redwing, J. M., Pogrebnyakov, A., Raghavan, S., Jones, J. E., Xi, X. X., Xu, S. V., Li, Q., Liu, Z., Vaithyanathan, V. & Schlom, D. G., Dec 1 2004, In : Materials Research Society Symposium Proceedings. EXS, 3, p. 153-155 3 p., EE7.3.

Research output: Contribution to journalConference article

Physical vapor deposition
Epitaxial growth
Magnesium
magnesium
Chemical vapor deposition
13 Citations (Scopus)

Evolution of surface morphology and film stress during MOCVD growth of InN on sapphire substrates

Jain, A., Raghavan, S. & Redwing, J. M., Aug 15 2004, In : Journal of Crystal Growth. 269, 1, p. 128-133 6 p.

Research output: Contribution to journalConference article

Aluminum Oxide
Metallorganic chemical vapor deposition
Sapphire
metalorganic chemical vapor deposition
Surface morphology
43 Citations (Scopus)

In situ stress measurements during the MOCVD growth of AlN buffer layers on (1 1 1) Si substrates

Raghavan, S. & Redwing, J. M., Jan 19 2004, In : Journal of Crystal Growth. 261, 2-3, p. 294-300 7 p.

Research output: Contribution to journalConference article

stress measurement
Stress measurement
Metallorganic chemical vapor deposition
Buffer layers
metalorganic chemical vapor deposition

Progress in the deposition of MgB 2 thin films

Xi, X. X., Pogrebnyakov, A. V., Zeng, X. H., Redwing, J. M., Xu, S. Y., Li, Q., Liu, Z., Lettieri, J., Vaithyanathan, V., Schlom, D. G., Christen, H. M., Zhai, H. Y. & Goyal, A., Dec 1 2004, In : Institute of Physics Conference Series. 181, p. 37-44 8 p.

Research output: Contribution to journalConference article

volatility
thin films
reactivity
vapor deposition
thermodynamics
11 Citations (Scopus)

Synthesis and properties of Si and SiGe/Si nanowires

Redwing, J. M., Lew, K. K., Bogart, T. E., Pan, L., Dickey, E. C., Carim, A. H., Wang, Y., Cabassi, M. A. & Mayer, T. S., Aug 16 2004, In : Proceedings of SPIE - The International Society for Optical Engineering. 5361, p. 52-59 8 p.

Research output: Contribution to journalConference article

SiGe
Nanowires
nanowires
Synthesis
synthesis
2003
1 Citation (Scopus)

Confocal photoluminescence and cathodoluminescence studies of AlGaN

Dierolf, V., Svitelskiy, O., Cargill, G. S., Nikiforov, A. Y., Redwing, J. M. & Acord, J., Dec 1 2003, In : Materials Research Society Symposium - Proceedings. 798, p. 677-682 6 p.

Research output: Contribution to journalConference article

Cathodoluminescence
Aluminum Oxide
cathodoluminescence
Sapphire
Photoluminescence
23 Citations (Scopus)

In situ growth of MgB2 thin films by hybrid physical-chemical vapor deposition

Xi, X. X., Zeng, X. H., Pogrebnyakov, A. V., Xu, S. Y., Li, Q., Zhong, Y., Brubaker, C. O., Liu, Z. K., Lysczek, E. M., Redwing, J. M., Lettieri, J., Schlom, D. G., Tian, W. & Pan, X. Q., Jun 1 2003, In : IEEE Transactions on Applied Superconductivity. 13, 2 III, p. 3233-3237 5 p.

Research output: Contribution to journalConference article

Physical vapor deposition
Chemical vapor deposition
vapor deposition
Thin films
thin films

Study of the growth mechanism and properties of InN films grown by MOCVD

Jain, A. & Redwing, J. M., Dec 1 2003, In : Materials Research Society Symposium - Proceedings. 798, p. 225-230 6 p.

Research output: Contribution to journalConference article

Metallorganic chemical vapor deposition
Buffer layers
metalorganic chemical vapor deposition
buffers
Aluminum Oxide
2002
68 Citations (Scopus)

Template-directed vapor-liquid-solid growth of silicon nanowires

Lew, K. K., Reuther, C., Carim, A. H., Redwing, J. M. & Martin, B. R., Jan 1 2002, In : Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20, 1, p. 389-392 4 p.

Research output: Contribution to journalConference article

Nanowires
nanowires
templates
Vapors
vapors
2001
8 Citations (Scopus)
High electron mobility transistors
Electronic properties
quantitative analysis
Electrostatics
field effect transistors
4 Citations (Scopus)

The chemistry of GaN growth

Kuech, T. F., Gu, S., Wate, R., Zhang, L., Sun, J., Dumesic, J. A. & Redwing, J. M., Dec 1 2001, In : Materials Research Society Symposium - Proceedings. 639, p. G1.1.1-G1.1.11

Research output: Contribution to journalConference article

chemistry
Vapor phase epitaxy
vapor phase epitaxy
Metals
Hydrides
2000
1 Citation (Scopus)

AlGaN/GaN high electron mobility transistor structure design and effects on electrical properties

Piner, E. L., Keogh, D. M., Flynn, J. S. & Redwing, J. M., Jan 1 2000, In : Materials Research Society Symposium - Proceedings. 595

Research output: Contribution to journalConference article

High electron mobility transistors
high electron mobility transistors
Electric properties
electrical properties
Doping (additives)

Generation and properties of semi-insulating SiC substrates

Wang, S., Powell, A., Redwing, J., Piner, E. & Saxler, A. W., Jan 1 2000, In : Materials Science Forum. 338, p. I/-

Research output: Contribution to journalConference article

Substrates
Sublimation
International System of Units
sublimation
temperature measurement
1999

AlGaN microwave power HFETs on insulating SiC substrates

Sullivan, G., Gertner, E., Pittman, R., Chen, M., Pierson, R., Higgins, A., Chen, Q., Yang, J. W., Peter Smith, R., Perez, R., Khan, A., Redwing, J. M., McDermott, B. & Boutros, K., Dec 1 1999, In : Materials Research Society Symposium - Proceedings. 572, p. 471-479 9 p.

Research output: Contribution to journalConference article

Field effect transistors
field effect transistors
Aluminum Oxide
Microwaves
microwaves
1 Citation (Scopus)

Comparative study of GaN growth process by MOVPE

Sun, J., Redwing, J. M. & Kuech, T. F., Dec 1 1999, In : Materials Research Society Symposium - Proceedings. 572, p. 463-468 6 p.

Research output: Contribution to journalConference article

Metallorganic vapor phase epitaxy
reactors
Flow of gases
Gases
gas flow
12 Citations (Scopus)

Effect of illumination on the electrical characteristics of AlGaN/GaN FETs

Dietrich, R., Vescan, A., Wieszt, A., Leier, H., Boutros, K. S., Redwing, J. M., Kornitzer, K., Freitag, R., Ebner, T. & Thonke, K., Nov 1 1999, In : Physica Status Solidi (A) Applied Research. 176, 1, p. 209-212 4 p.

Research output: Contribution to journalConference article

Drain current
Carrier mobility
Field effect transistors
Relaxation time
field effect transistors
1 Citation (Scopus)

Fabrication of smooth GaN-based laser facets

Stocker, D. A., Schubert, E. F., Boutros, K. S. & Redwing, J. M., Dec 1 1999, In : Materials Research Society Symposium - Proceedings. 537

Research output: Contribution to journalConference article

Wet etching
flat surfaces
etching
Fabrication
fabrication
1 Citation (Scopus)

Hydrostatic and uniaxial stress dependence and photo induced effects on the channel conductance of n-AlGaN/GaN heterostructures grown on sapphire substrates

Fling, A. K., Cai, C., Ruden, P. P., Nathan, M. I., Chen, M. Y., McDermott, B. T., Sullivan, G. J., Van Hove, J. M., Boutros, K., Redwing, J., Yang, J. W., Chen, Q., Khan, M. A., Schaff, W. & Murphy, M., Dec 1 1999, In : Materials Research Society Symposium - Proceedings. 572, p. 495-500 6 p.

Research output: Contribution to journalConference article

Aluminum Oxide
hydrostatics
Sapphire
Heterojunctions
sapphire
12 Citations (Scopus)

Transport and reaction behaviors of precursors during metalorganic vapor phase epitaxy of gallium nitride

Sun, J., Redwing, J. M. & Kuech, T. F., Nov 1 1999, In : Physica Status Solidi (A) Applied Research. 176, 1, p. 693-698 6 p.

Research output: Contribution to journalConference article

Gallium nitride
Metallorganic vapor phase epitaxy
gallium nitrides
vapor phase epitaxy
Fluids
1998

InGaN/GaN double heterostructure laser with cleaved facets

Stocker, D., Schubert, E. F., Grieshaber, W., Boutros, K. S., Flynn, J. S., Vaudo, R. P., Phanse, V. M. & Redwing, J. M., Dec 1 1998, In : Proceedings of SPIE - The International Society for Optical Engineering. 3284, p. 122-127 6 p.

Research output: Contribution to journalConference article

InGaN
Heterostructures
Facet
vapor phase epitaxy
Heterojunctions

InGaN/GaN double heterostructure LEDs on HVPE GaN-on-sapphire substrates

Smith, G. M., Boutros, K. S., Szewczuk, J. W., Flynn, J. S., Phanse, V. M., Vaudo, R. P. & Redwing, J. M., Dec 1 1998, In : Proceedings of SPIE - The International Society for Optical Engineering. 3279, p. 8-16 9 p.

Research output: Contribution to journalConference article

InGaN
Vapor phase epitaxy
Epitaxy
Heterostructures
Aluminum Oxide

Yellow photoluminescence in MOCVD-grown n-type GaN

Schubert, E. F., Grieshaber, W., Boutros, K. S. & Redwing, J. M., Dec 1 1998, In : Proceedings of SPIE - The International Society for Optical Engineering. 3279, p. 59-68 10 p.

Research output: Contribution to journalConference article

MOCVD
Photoluminescence
Metallorganic chemical vapor deposition
metalorganic chemical vapor deposition
Luminescence
1997

Fabrication and optical pumping of laser cavities made by cleaving and wet chemical etching

Stocker, D., Schubert, E. F., Grieshaber, W., Redwing, J. M., Boutros, K. S., Flynn, J. S. & Vaudo, R. P., Dec 1 1997, In : Materials Research Society Symposium - Proceedings. 482, p. 1009-1014 6 p.

Research output: Contribution to journalConference article

Optical pumping
Wet etching
Laser resonators
optical pumping
laser cavities
2 Citations (Scopus)

Intrinsic mobility limits of a two-dimensional electron gas in AlGaN/GaN heterostructures

Walukiewicz, W., Hsu, L. & Redwing, J. M., Jan 1 1997, In : Materials Research Society Symposium - Proceedings. 449, p. 573-578 6 p.

Research output: Contribution to journalConference article

Two dimensional electron gas
Phonons
electron gas
Heterojunctions
Acoustics

Luminescence properties of Si-doped GaN and evidence of compensating defects as the origin of the yellow luminescence

Goepfert, I. D., Schubert, E. F. & Redwing, J. M., Dec 1 1997, In : Materials Research Society Symposium - Proceedings. 482, p. 679-684 6 p.

Research output: Contribution to journalConference article

Gallium nitride
gallium nitrides
Luminescence
Doping (additives)
luminescence
19 Citations (Scopus)

Phase formation and morphology in nickel and nickel/gold contacts to gallium nitride

Venugopalan, H. S., Mohney, S. E., Luther, B. P., Delucca, J. M., Wolter, S. D., Redwing, J. M. & Bulman, G. E., Jan 1 1997, In : Materials Research Society Symposium - Proceedings. 468, p. 431-436 6 p.

Research output: Contribution to journalConference article

Gallium nitride
gallium nitrides
Nickel
Gold
nickel

Substrate effects on GaN photodetector performance

Smith, G. M., Redwing, J. M., Flynn, J. S., Phanse, V. M. & Vaudo, R. P., Jan 1 1997, In : LEOS Summer Topical Meeting. 1 p.

Research output: Contribution to journalConference article

Photodetectors
photometers
Detectors
detectors
Substrates
1996
1 Citation (Scopus)

Light emission properties of GaN-based double heterostructures and quantum wells

Loeber, D. A. S., Redwing, J. M., Anderson, N. G. & Tischler, M. A., Jan 1 1996, In : Materials Research Society Symposium - Proceedings. 395, p. 949-954 6 p.

Research output: Contribution to journalConference article

Light emission
Semiconductor quantum wells
light emission
Heterojunctions
quantum wells
24 Citations (Scopus)

MOVPE growth of high electron mobility AlGaN/GaN heterostructures

Redwing, J. M., Flynn, J. S., Tischler, M. A., Mitchel, W. & Saxler, A., Jan 1 1996, In : Materials Research Society Symposium - Proceedings. 395, p. 201-206 6 p.

Research output: Contribution to journalConference article

Metallorganic vapor phase epitaxy
Two dimensional electron gas
Electron mobility
electron mobility
vapor phase epitaxy
1995
6 Citations (Scopus)

Influence of impurities on mechanisms of growth in MOVPE GaAs

Nayak, S., Redwing, J. M., Huang, J. W., Lagally, M. G. & Kuech, T. F., Jan 1 1995, In : Materials Research Society Symposium - Proceedings. 367, p. 293-298 6 p.

Research output: Contribution to journalConference article

Vapor phase epitaxy
vapor phase epitaxy
Metals
Impurities
impurities

New Si CVD precursors: preparation and pre-screening

Gaines, D., Hop, M., Kuech, T., Redwing, J. M., Saulys, D. & Thon, A., Dec 1 1995, In : Materials Research Society Symposium - Proceedings. 377, p. 81-86 6 p.

Research output: Contribution to journalConference article

Film growth
Chemical vapor deposition
Screening
screening
vapor deposition