• 774 Citations
  • 14 h-Index
20042019
If you made any changes in Pure, your changes will be visible here soon.

Fingerprint Dive into the research topics where Ke Wang is active. These topic labels come from the works of this person. Together they form a unique fingerprint.

Metallic glass Chemical Compounds
Epitaxial growth Chemical Compounds
metallic glasses Physics & Astronomy
Graphite Chemical Compounds
Transmission electron microscopy Chemical Compounds
Graphene Engineering & Materials Science
Sintering Chemical Compounds
Boron nitride Engineering & Materials Science

Network Recent external collaboration on country level. Dive into details by clicking on the dots.

Research Output 2004 2019

  • 774 Citations
  • 14 h-Index
  • 49 Article
  • 1 Letter
1 Citation (Scopus)

Atomic and electronic structure of domains walls in a polar metal

Stone, G., Puggioni, D., Lei, S., Gu, M., Wang, K., Wang, Y., Ge, J., Lu, X. Z., Mao, Z., Rondinelli, J. M. & Gopalan, V., Jan 9 2019, In : Physical Review B. 99, 1, 014105.

Research output: Contribution to journalArticle

Crystal atomic structure
Domain walls
atomic structure
Electronic structure
domain wall
2 Citations (Scopus)

Cold-sintered V2O5-PEDOT:PSS nanocomposites for negative temperature coefficient materials

Zhao, Y., Berbano, S. S., Gao, L., Wang, K., Guo, J., Tsuji, K., Wang, J. & Randall, C. A., Apr 1 2019, In : Journal of the European Ceramic Society. 39, 4, p. 1257-1262 6 p.

Research output: Contribution to journalArticle

Negative temperature coefficient
Nanocomposites
Sintering
Polymers
Temperature

Effect of Ge doping on growth stress and conductivity in Al x Ga 1-x N

Bansal, A., Wang, K., Lundh, J. S., Choi, S. & Redwing, J. M., Apr 8 2019, In : Applied Physics Letters. 114, 14, 142101.

Research output: Contribution to journalArticle

Open Access
germanium
conductivity
silicon
tensile stress
cracks
1 Citation (Scopus)

Full orientation control of epitaxial MoS2 on hBN assisted by substrate defects

Zhang, F., Wang, Y., Erb, C., Wang, K., Moradifar, P., Crespi, V. H. & Alem, N., Apr 29 2019, In : Physical Review B. 99, 15, 155430.

Research output: Contribution to journalArticle

Point defects
Epitaxial growth
Defects
defects
Substrates

GaN Heteroepitaxy on Strain-Engineered (111) Si/Si 1−x Ge x

Bansal, A., Martin, N. C., Wang, K. & Redwing, J. M., Jan 1 2019, In : Journal of Electronic Materials.

Research output: Contribution to journalArticle

Epitaxial growth
Epilayers
sensors
Sensors
stress measurement