• 6183 Citations
  • 44 h-Index
1979 …2019
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Fingerprint Dive into the research topics where Patrick M. Lenahan is active. These topic labels come from the works of this person. Together they form a unique fingerprint.

  • 4 Similar Profiles
Defects Engineering & Materials Science
defects Physics & Astronomy
Paramagnetic resonance Engineering & Materials Science
electron paramagnetic resonance Physics & Astronomy
silicon Physics & Astronomy
Magnetic resonance Engineering & Materials Science
field effect transistors Physics & Astronomy
traps Physics & Astronomy

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Research Output 1979 2019

A Multifield and Frequency Electrically Detected Magnetic Resonance Study of Atomic-Scale Defects in Gamma Irradiated Modern MOS Integrated Circuitry

Myers, K. J., Waskiewicz, R. J., Lenahan, P. M. & Young, C. D., Jan 1 2019, In : IEEE Transactions on Nuclear Science. 66, 1, p. 405-412 8 p., 8528525.

Research output: Contribution to journalArticle

Magnetic resonance
Paramagnetic resonance
magnetic resonance
Magnetic resonance measurement
Defects

A new analytical tool for the study of radiation effects in 3-D integrated circuits: Near-zero field magnetoresistance spectroscopy

Ashton, J. P., Moxim, S. J., Lenahan, P. M., McKay, C. G., Waskiewicz, R. J., Myers, K. J., Flatte, M. E., Harmon, N. J. & Young, C. D., Jan 1 2019, In : IEEE Transactions on Nuclear Science. 66, 1, p. 428-436 9 p., 8565893.

Research output: Contribution to journalArticle

Radiation effects
Radiation damage
radiation effects
Magnetoresistance
radiation damage

Electrically detected electron nuclear double resonance in 4H-SiC bipolar junction transistors

Waskiewicz, R. J., Manning, B. R., McCrory, D. J. & Lenahan, P. M., Sep 28 2019, In : Journal of Applied Physics. 126, 12, 125709.

Research output: Contribution to journalArticle

junction transistors
bipolar transistors
point defects
electrons
solid state

Electrically detected magnetic resonance study of barium and nitric oxide treatments of 4H-SiC metal-oxide-semiconductor field-effect transistors

Ashton, J. P., Lenahan, P. M., Lichtenwalner, D. J., Lelis, A. J. & Anders, M. A., Oct 14 2019, In : Journal of Applied Physics. 126, 14, 145702.

Research output: Contribution to journalArticle

barium oxides
nitric oxide
metal oxide semiconductors
magnetic resonance
field effect transistors

Reliability and Performance Issues in SiC MOSFETs: Insight Provided by Spin Dependent Recombination

Ashton, J. P., Lenahan, P. M., Lichtenwalner, D. J., Lelis, A. J. & Anders, M. A., May 22 2019, 2019 IEEE International Reliability Physics Symposium, IRPS 2019. Institute of Electrical and Electronics Engineers Inc., 8720423. (IEEE International Reliability Physics Symposium Proceedings; vol. 2019-March).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Defects
Nitric oxide
MOSFET devices
Magnetic resonance
Barium