Research output per year
Research output per year
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Dive into the research topics where Rongming Chu is active. These topic labels come from the works of this person. Together they form a unique fingerprint.
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Research output
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Design of GaN/AlGaN/GaN Super-Heterojunction Schottky Diode
Han, S. W., Song, J. & Chu, R., Jan 2020, In: IEEE Transactions on Electron Devices. 67, 1, p. 69-74 6 p., 8932621.Research output: Contribution to journal › Article › peer-review
2 Scopus citations -
Effect of Substrate Choice on Transient Performance of Lateral GaN FETs
Hontz, M. R., Chu, R. & Khanna, R., 2020, In: IEEE Journal of the Electron Devices Society. 8, p. 331-335 5 p., 9040524.Research output: Contribution to journal › Article › peer-review
Open Access -
Experimental Demonstration of Charge- Balanced GaN Super-Heterojunction Schottky Barrier Diode Capable of 2.8 kV Switching
Han, S. W., Song, J., Yoo, S. H., Ma, Z., Lavelle, R. M., Snyder, D. W., Redwing, J. M., Jackson, T. N. & Chu, R., Dec 2020, In: IEEE Electron Device Letters. 41, 12, p. 1758-1761 4 p., 9217445.Research output: Contribution to journal › Article › peer-review
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GaN power switches on the rise: Demonstrated benefits and unrealized potentials
Chu, R., Mar 2 2020, In: Applied Physics Letters. 116, 9, 090502.Research output: Contribution to journal › Review article › peer-review
Open Access6 Scopus citations -
Characteristics of P-channel GaN MOSFET up to 300 °c
Han, S. W., Song, J. & Chu, R., Jun 2019, 2019 Device Research Conference, DRC 2019. Institute of Electrical and Electronics Engineers Inc., p. 147-148 2 p. 9046423. (Device Research Conference - Conference Digest, DRC; vol. 2019-June).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution