Engineering & Materials Science
High electron mobility transistors
100%
Heterojunctions
58%
Two dimensional electron gas
42%
Electric breakdown
26%
Schottky barrier diodes
25%
Gallium nitride
22%
Transistors
21%
Molecular beam epitaxy
21%
Substrates
20%
Electron gas
19%
Metals
19%
Doping (additives)
17%
Electric fields
16%
Plasmas
15%
Ohmic contacts
15%
Quantum confinement
15%
Semiconductor materials
14%
Switches
13%
Cutoff frequency
12%
Power electronics
12%
Field effect transistors
11%
Diodes
11%
Metallorganic chemical vapor deposition
10%
Threshold voltage
10%
Leakage currents
10%
Oxide semiconductors
9%
Gates (transistor)
8%
Power transistors
8%
Varactors
8%
Organic chemicals
8%
Capacitance
8%
Electrons
7%
Demonstrations
7%
Degradation
7%
Polarization
7%
Electrodes
7%
Density of gases
7%
Ammonia
7%
Gate dielectrics
7%
Gallium
7%
Carrier concentration
7%
Temperature
7%
Poisson equation
7%
Oxides
6%
Indium
6%
MISFET devices
6%
Growth temperature
6%
Inductance
6%
Epitaxial growth
6%
Chemical Compounds
Breakdown Voltage
33%
Two-Dimensional Electron Gas
26%
Schottky Barrier
26%
Electron Gas
24%
Field Effect
23%
Electron Mobility
16%
Compound Mobility
14%
Fluorescence Maxima
13%
Nitride
13%
Buffer Solution
11%
Leakage Current
10%
Transconductance
10%
Plate Like Crystal
10%
Application
9%
Voltage
9%
Strain
9%
Electric Field
9%
Microwave
9%
Polarization
9%
Current Gain
8%
Interface State
7%
Simulation
7%
Electron Particle
6%
Surface State
6%
Epitaxial Growth
6%
Plasma
6%
Surface
5%
Interface Trap
5%
Schottky Contact
5%
Trap Density Measurement
5%
Doping Material
5%
Physics & Astronomy
high electron mobility transistors
31%
metalorganic chemical vapor deposition
22%
electron gas
15%
field effect transistors
13%
buffers
11%
transistors
9%
leakage
8%
gallium nitrides
8%
traps
7%
Schottky diodes
7%
switches
7%
molecular beam epitaxy
6%
templates
6%
performance
6%