Engineering & Materials Science
Ammonia
7%
Capacitance
8%
Carrier concentration
7%
Cutoff frequency
12%
Degradation
7%
Demonstrations
7%
Density of gases
7%
Diodes
11%
Doping (additives)
17%
Electric breakdown
26%
Electric fields
16%
Electrodes
7%
Electron gas
19%
Electrons
7%
Epitaxial growth
6%
Field effect transistors
11%
Gallium
7%
Gallium nitride
22%
Gate dielectrics
7%
Gates (transistor)
8%
Growth temperature
6%
Heterojunctions
58%
High electron mobility transistors
100%
Indium
6%
Inductance
6%
Leakage currents
10%
Metallorganic chemical vapor deposition
10%
Metals
19%
MISFET devices
6%
Molecular beam epitaxy
21%
Ohmic contacts
15%
Organic chemicals
8%
Oxide semiconductors
9%
Oxides
6%
Plasmas
15%
Poisson equation
7%
Polarization
7%
Power electronics
12%
Power transistors
8%
Quantum confinement
15%
Schottky barrier diodes
25%
Semiconductor materials
14%
Substrates
20%
Switches
13%
Temperature
7%
Threshold voltage
10%
Transistors
21%
Two dimensional electron gas
42%
Varactors
8%
Chemical Compounds
Application
9%
Breakdown Voltage
33%
Buffer Solution
11%
Compound Mobility
14%
Current Gain
8%
Doping Material
5%
Electric Field
9%
Electron Gas
24%
Electron Mobility
16%
Electron Particle
6%
Epitaxial Growth
6%
Field Effect
23%
Fluorescence Maxima
13%
Interface State
7%
Interface Trap
5%
Leakage Current
10%
Microwave
9%
Nitride
13%
Plasma
6%
Plate Like Crystal
10%
Polarization
9%
Schottky Barrier
26%
Schottky Contact
5%
Simulation
7%
Strain
9%
Surface
5%
Surface State
6%
Transconductance
10%
Trap Density Measurement
5%
Two-Dimensional Electron Gas
26%
Voltage
9%
Physics & Astronomy
buffers
11%
electron gas
15%
field effect transistors
13%
gallium nitrides
8%
high electron mobility transistors
31%
leakage
8%
metalorganic chemical vapor deposition
22%
molecular beam epitaxy
6%
performance
6%
Schottky diodes
7%
switches
7%
templates
6%
transistors
9%
traps
7%