• 71 Citations
  • 5 h-Index
1989 …2015
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Research Output 1989 2015

  • 71 Citations
  • 5 h-Index
  • 13 Article
  • 4 Conference contribution
  • 2 Paper
  • 2 Conference article
2015
2 Citations (Scopus)
Amorphous silicon
polaritons
amorphous silicon
Solar cells
solar cells
2014
5 Citations (Scopus)

High temperature bias-stress-induced instability in power trench-gated MOSFETs

Hao, J., Rioux, M., Suliman, S. A. & Awadelkarim, O. O., Feb 1 2014, In : Microelectronics Reliability. 54, 2, p. 374-380 7 p.

Research output: Contribution to journalArticle

Oxides
field effect transistors
oxides
Degradation
Temperature

High-temperature reverse-bias stressing of thin gate oxides in power transistors

Suliman, S. A., Awadelkarim, O. O., Hao, J. & Rioux, M., Jan 1 2014, In : ECS Transactions. 64, 8, p. 45-52 8 p.

Research output: Contribution to journalConference article

Oxides
Degradation
Hydrogen
Temperature
Field effect transistors
2011
Strength of materials
Students
Textbooks
Spreadsheets
Mechanics
2007
5 Citations (Scopus)
simulated annealing
Schottky diodes
Simulated annealing
Diodes
thresholds
1 Citation (Scopus)

Electrical studies on metal/SrTa2O6 or TiO 2/ Si substrate stack systems

Awadelkarim, O. O., Jiang, J., Suliman, S. A., Sarpatwari, K., Passmore, L. J., Lee, D. O., Roman, P. & Ruzyllo, J., Dec 1 2007, ECS Transactions - 22nd Symposium on Microelectronics Technology and Devices, SBMicro2007. 1 ed. p. 353-362 10 p. (ECS Transactions; vol. 9, no. 1).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Capacitors
Oxides
Nitridation
Capacitance measurement
Interface states
2006

Current-voltage characteristics and charge-carrier traps in N-Type 4H-SiC schottky structures

Sarpatwari, K., Passmore, L. J., Suliman, S. A. & Awadelkarim, O. O., Dec 1 2006, Extended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06. p. 250-253 4 p. 1669490. (Extended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Electron traps
Deep level transient spectroscopy
Current voltage characteristics
Charge carriers
charge carriers
6 Citations (Scopus)

Fowler-Nordheim and hot carrier reliabilities of U-shaped trench-gated transistors studied by three terminal charge pumping

Passmore, L. J., Sarpatwari, K., Suliman, S. A., Awadelkarim, O. O., Ridley, R., Dolny, G., Michalowicz, J. & Wu, C. T., May 10 2006, In : Thin Solid Films. 504, 1-2, p. 302-306 5 p.

Research output: Contribution to journalArticle

Hot carriers
Transistors
pumping
transistors
Field effect transistors
1 Citation (Scopus)

Properties of Si / SiO2 interfaces in vertical trench MOSFETs

Suliman, S. A., 2006, Extended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06. p. 225-228 4 p. 1669484

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Oxides
field effect transistors
oxides
capacitors
Capacitors
2005
10 Citations (Scopus)

Modified three terminal charge pumping technique applied to vertical transistor structures

Passmore, L. J., Sarpatwari, K., Suliman, S. A., Awadelkarim, O. O., Ridley, R., Dolny, G., Michalowicz, J. & Wu, C. T., Dec 1 2005, In : Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23, 5, p. 2189-2193 5 p.

Research output: Contribution to journalArticle

MOSFET devices
Transistors
pumping
transistors
metal oxide semiconductors
2004
4 Citations (Scopus)
Silicon oxides
Oxides
metal oxides
Metals
Deep level transient spectroscopy
2003
2 Citations (Scopus)

Electrical properties of the gate oxide and its interface with Si in U-shaped trench MOS capacitors: The impact of polycrystalline Si doping and oxide composition

Suliman, S. A., Venkataraman, B., Wu, C. T., Ridley, R. S., Dolny, G. M., Awadelkarim, O. O., Fonash, S. J. & Ruzyllo, J., May 1 2003, In : Solid-State Electronics. 47, 5, p. 899-905 7 p.

Research output: Contribution to journalArticle

MOS capacitors
Boron
Oxides
capacitors
Electric properties
2002
7 Citations (Scopus)

Electron and hole trapping in the bulk and interface with Si of a thermal oxide grown on the sidewalls and base of a U-shaped silicon trench

Suliman, S. A., Awadelkarim, O. O., Fonash, S. J., Ridley, R. S., Dolny, G. M., Hao, J. & Knoedler, C. M., Jun 1 2002, In : Solid-State Electronics. 46, 6, p. 837-845 9 p.

Research output: Contribution to journalArticle

Dangling bonds
Silicon
Oxides
trapping
Deep level transient spectroscopy
3 Citations (Scopus)

Growth and reliability of thick gate oxide in U-trench for power MOSFET's

Wu, C. T., Ridley, R. S., Dolny, G., Grebs, T., Knoedler, C., Suliman, S., Venkataraman, B., Awadelkarim, O. & Ruzyllo, J., Jan 1 2002, p. 149-152. 4 p.

Research output: Contribution to conferencePaper

Oxidation
Oxides
Geometry
Growth kinetics
Temperature
2001
1 Citation (Scopus)

Characterization of gate oxide degradation mechanisms in trench-gated power MOSFETS using the charge-pumping technique

Dolny, G., Gollagunta, N., Suliman, S. A., Trabzon, L., Horn, M. W., Awadelkarim, O. O., Fonash, S. J., Knoedler, C. M., Hao, J., Ridley, R., Kocon, C., Grebs, T. & Zeng, J., Jan 1 2001, p. 431-434. 4 p.

Research output: Contribution to conferencePaper

Degradation
Oxides
High resolution electron microscopy
Transistors
Surface roughness
8 Citations (Scopus)

The dependence of UMOSFET characteristics and reliability on geometry and processing

Suliman, S. A., Gollagunta, N., Trabzon, L., Hao, J., Ridley, R. S., Knoedler, C. M., Dolny, G. M., Awadelkarim, O. O. & Fonash, S. J., Jun 1 2001, In : Semiconductor Science and Technology. 16, 6, p. 447-454 8 p.

Research output: Contribution to journalArticle

Oxides
Geometry
Silicon oxides
Processing
geometry
4 Citations (Scopus)

The effects of channel boron-doping on the performance and hot electron reliability of N-channel trench UMOSFETs

Suliman, S. A., Awadelkarim, O. O., Fonash, S. J., Dolny, G. M., Hao, J., Ridley, R. S. & Knoedler, C. M., May 1 2001, In : Solid-State Electronics. 45, 5, p. 655-661 7 p.

Research output: Contribution to journalArticle

silicon transistors
Boron
Hot electrons
Silicon oxides
Field effect transistors
3 Citations (Scopus)

The impact of trench geometry and processing on the performance and reliability of low voltage power UMOSFETs

Suliman, S. A., Gallogunta, N., Trabzon, L., Hao, J., Dolny, G., Ridley, R., Grebs, T., Benjamin, J., Kocon, C., Zeng, J., Knoedler, C. M., Horn, M. W., Awadelkarim, O. O., Fonash, S. J. & Ruzyllo, J., Jan 1 2001, In : Annual Proceedings - Reliability Physics (Symposium). p. 308-314 7 p.

Research output: Contribution to journalArticle

Oxides
Geometry
Electric potential
Processing
Field effect transistors
5 Citations (Scopus)

The impact of trench geometry and processing on the performance and reliability of low voltage power UMOSFETs

Suliman, S. A., Gallogunta, N., Trabzon, L., Hao, J., Dolny, G., Ridley, R., Grebs, T., Benjamin, J., Kocon, C., Zeng, J., Knoedler, C. M., Horn, M., Awadelkarim, O. O., Fonash, S. J. & Ruzyllo, J., Jan 1 2001, 2001 IEEE International Reliability Physics Symposium Proceedings - 39th Annual. Institute of Electrical and Electronics Engineers Inc., p. 308-314 7 p. 922920. (IEEE International Reliability Physics Symposium Proceedings; vol. 2001-January).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Oxides
Geometry
Electric potential
Processing
Field effect transistors
1990
2 Citations (Scopus)

Defect states in carbon and oxygen implanted p-type silicon

Awadelkarim, O. O., Suliman, S. A., Monemar, B., Lindström, J. L., Zhang, Y. & Corbett, J. W., Dec 1 1990, In : Journal of Applied Physics. 67, 1, p. 270-275 6 p.

Research output: Contribution to journalArticle

traps
carbon
defects
silicon
oxygen
1989
2 Citations (Scopus)

On the 0.34 eV Hole trap in irradiated boron-doped silicon

Awadelkarim, O. O., Suliman, S. A. & Monemar, B., Dec 1 1989, In : Radiation Effects and Defects in Solids. 111-112, 1-2, p. 273-280 8 p.

Research output: Contribution to journalArticle

Hole traps
Boron
Silicon
boron
traps