• 73 Citations
  • 5 h-Index
1989 …2015

Research output per year

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Research Output

  • 73 Citations
  • 5 h-Index
  • 13 Article
  • 4 Conference contribution
  • 2 Paper
  • 2 Conference article
2015
2 Scopus citations
2014

High temperature bias-stress-induced instability in power trench-gated MOSFETs

Hao, J., Rioux, M., Suliman, S. A. & Awadelkarim, O. O., Feb 1 2014, In : Microelectronics Reliability. 54, 2, p. 374-380 7 p.

Research output: Contribution to journalArticle

5 Scopus citations

High-temperature reverse-bias stressing of thin gate oxides in power transistors

Suliman, S. A., Awadelkarim, O. O., Hao, J. & Rioux, M., Jan 1 2014, In : ECS Transactions. 64, 8, p. 45-52 8 p.

Research output: Contribution to journalConference article

2011
2007
5 Scopus citations

Electrical studies on metal/SrTa2O6 or TiO 2/ Si substrate stack systems

Awadelkarim, O. O., Jiang, J., Suliman, S. A., Sarpatwari, K., Passmore, L. J., Lee, D. O., Roman, P. & Ruzyllo, J. R., Dec 1 2007, ECS Transactions - 22nd Symposium on Microelectronics Technology and Devices, SBMicro2007. 1 ed. p. 353-362 10 p. (ECS Transactions; vol. 9, no. 1).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations
2006

Current-voltage characteristics and charge-carrier traps in N-Type 4H-SiC schottky structures

Sarpatwari, K., Passmore, L. J., Suliman, S. A. & Awadelkarim, O. O., Dec 1 2006, Extended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06. p. 250-253 4 p. 1669490. (Extended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Fowler-Nordheim and hot carrier reliabilities of U-shaped trench-gated transistors studied by three terminal charge pumping

Passmore, L. J., Sarpatwari, K., Suliman, S. A., Awadelkarim, O. O., Ridley, R., Dolny, G., Michalowicz, J. & Wu, C. T., May 10 2006, In : Thin Solid Films. 504, 1-2, p. 302-306 5 p.

Research output: Contribution to journalArticle

6 Scopus citations

Properties of Si / SiO2 interfaces in vertical trench MOSFETs

Suliman, S. A., 2006, Extended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06. p. 225-228 4 p. 1669484

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations
2005

Modified three terminal charge pumping technique applied to vertical transistor structures

Passmore, L. J., Sarpatwari, K., Suliman, S. A., Awadelkarim, O. O., Ridley, R., Dolny, G., Michalowicz, J. & Wu, C. T., Dec 1 2005, In : Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23, 5, p. 2189-2193 5 p.

Research output: Contribution to journalArticle

10 Scopus citations
2004
4 Scopus citations
2003

Electrical properties of the gate oxide and its interface with Si in U-shaped trench MOS capacitors: The impact of polycrystalline Si doping and oxide composition

Suliman, S. A., Venkataraman, B., Wu, C. T., Ridley, R. S., Dolny, G. M., Awadelkarim, O. O., Fonash, S. J. & Ruzyllo, J., May 1 2003, In : Solid-State Electronics. 47, 5, p. 899-905 7 p.

Research output: Contribution to journalArticle

3 Scopus citations
2002

Electron and hole trapping in the bulk and interface with Si of a thermal oxide grown on the sidewalls and base of a U-shaped silicon trench

Suliman, S. A., Awadelkarim, O. O., Fonash, S. J., Ridley, R. S., Dolny, G. M., Hao, J. & Knoedler, C. M., Jun 1 2002, In : Solid-State Electronics. 46, 6, p. 837-845 9 p.

Research output: Contribution to journalArticle

7 Scopus citations

Growth and reliability of thick gate oxide in U-trench for power MOSFET's

Wu, C. T., Ridley, R. S., Dolny, G., Grebs, T., Knoedler, C., Suliman, S., Venkataraman, B., Awadelkarim, O. & Ruzyllo, J., Jan 1 2002, p. 149-152. 4 p.

Research output: Contribution to conferencePaper

3 Scopus citations
2001

Characterization of gate oxide degradation mechanisms in trench-gated power MOSFETS using the charge-pumping technique

Dolny, G., Gollagunta, N., Suliman, S. A., Trabzon, L., Horn, M. W., Awadelkarim, O. O., Fonash, S. J., Knoedler, C. M., Hao, J., Ridley, R., Kocon, C., Grebs, T. & Zeng, J., Jan 1 2001, p. 431-434. 4 p.

Research output: Contribution to conferencePaper

1 Scopus citations

The dependence of UMOSFET characteristics and reliability on geometry and processing

Suliman, S. A., Gollagunta, N., Trabzon, L., Hao, J., Ridley, R. S., Knoedler, C. M., Dolny, G. M., Awadelkarim, O. O. & Fonash, S. J., Jun 1 2001, In : Semiconductor Science and Technology. 16, 6, p. 447-454 8 p.

Research output: Contribution to journalArticle

9 Scopus citations

The effects of channel boron-doping on the performance and hot electron reliability of N-channel trench UMOSFETs

Suliman, S. A., Awadelkarim, O. O., Fonash, S. J., Dolny, G. M., Hao, J., Ridley, R. S. & Knoedler, C. M., May 1 2001, In : Solid-State Electronics. 45, 5, p. 655-661 7 p.

Research output: Contribution to journalArticle

4 Scopus citations

The impact of trench geometry and processing on the performance and reliability of low voltage power UMOSFETs

Suliman, S. A., Gallogunta, N., Trabzon, L., Hao, J., Dolny, G., Ridley, R., Grebs, T., Benjamin, J., Kocon, C., Zeng, J., Knoedler, C. M., Horn, M., Awadelkarim, O. O., Fonash, S. J. & Ruzyllo, J., Jan 1 2001, In : Annual Proceedings - Reliability Physics (Symposium). p. 308-314 7 p.

Research output: Contribution to journalArticle

3 Scopus citations

The impact of trench geometry and processing on the performance and reliability of low voltage power UMOSFETs

Suliman, S. A., Gallogunta, N., Trabzon, L., Hao, J., Dolny, G., Ridley, R., Grebs, T., Benjamin, J., Kocon, C., Zeng, J., Knoedler, C. M., Horn, M., Awadelkarim, O. O., Fonash, S. J. & Ruzyllo, J., Jan 1 2001, 2001 IEEE International Reliability Physics Symposium Proceedings - 39th Annual. Institute of Electrical and Electronics Engineers Inc., p. 308-314 7 p. 922920. (IEEE International Reliability Physics Symposium Proceedings; vol. 2001-January).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations
1990

Defect states in carbon and oxygen implanted p-type silicon

Awadelkarim, O. O., Suliman, S. A., Monemar, B., Lindström, J. L., Zhang, Y. & Corbett, J. W., Dec 1 1990, In : Journal of Applied Physics. 67, 1, p. 270-275 6 p.

Research output: Contribution to journalArticle

2 Scopus citations
1989

On the 0.34 eV Hole trap in irradiated boron-doped silicon

Awadelkarim, O. O., Suliman, S. A. & Monemar, B., Dec 1 1989, In : Radiation Effects and Defects in Solids. 111-112, 1-2, p. 273-280 8 p.

Research output: Contribution to journalArticle

2 Scopus citations