• 71 Citations
  • 5 h-Index
1989 …2015
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Research Output 1989 2015

  • 71 Citations
  • 5 h-Index
  • 13 Article
  • 4 Conference contribution
  • 2 Paper
  • 2 Conference article
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Conference contribution
2007
1 Citation (Scopus)

Electrical studies on metal/SrTa2O6 or TiO 2/ Si substrate stack systems

Awadelkarim, O. O., Jiang, J., Suliman, S. A., Sarpatwari, K., Passmore, L. J., Lee, D. O., Roman, P. & Ruzyllo, J., Dec 1 2007, ECS Transactions - 22nd Symposium on Microelectronics Technology and Devices, SBMicro2007. 1 ed. p. 353-362 10 p. (ECS Transactions; vol. 9, no. 1).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Capacitors
Oxides
Nitridation
Capacitance measurement
Interface states
2006

Current-voltage characteristics and charge-carrier traps in N-Type 4H-SiC schottky structures

Sarpatwari, K., Passmore, L. J., Suliman, S. A. & Awadelkarim, O. O., Dec 1 2006, Extended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06. p. 250-253 4 p. 1669490. (Extended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Electron traps
Deep level transient spectroscopy
Current voltage characteristics
Charge carriers
charge carriers
1 Citation (Scopus)

Properties of Si / SiO2 interfaces in vertical trench MOSFETs

Suliman, S. A., 2006, Extended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06. p. 225-228 4 p. 1669484

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Oxides
field effect transistors
oxides
capacitors
Capacitors
2001
5 Citations (Scopus)

The impact of trench geometry and processing on the performance and reliability of low voltage power UMOSFETs

Suliman, S. A., Gallogunta, N., Trabzon, L., Hao, J., Dolny, G., Ridley, R., Grebs, T., Benjamin, J., Kocon, C., Zeng, J., Knoedler, C. M., Horn, M., Awadelkarim, O. O., Fonash, S. J. & Ruzyllo, J., Jan 1 2001, 2001 IEEE International Reliability Physics Symposium Proceedings - 39th Annual. Institute of Electrical and Electronics Engineers Inc., p. 308-314 7 p. 922920. (IEEE International Reliability Physics Symposium Proceedings; vol. 2001-January).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Oxides
Geometry
Electric potential
Processing
Field effect transistors