• 74 Citations
  • 5 h-Index
1989 …2015

Research output per year

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Research Output

  • 74 Citations
  • 5 h-Index
  • 13 Article
  • 4 Conference contribution
  • 2 Paper
  • 2 Conference article
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Article
5 Scopus citations

Defect states in carbon and oxygen implanted p-type silicon

Awadelkarim, O. O., Suliman, S. A., Monemar, B., Lindström, J. L., Zhang, Y. & Corbett, J. W., Dec 1 1990, In : Journal of Applied Physics. 67, 1, p. 270-275 6 p.

Research output: Contribution to journalArticle

2 Scopus citations

Electrical properties of the gate oxide and its interface with Si in U-shaped trench MOS capacitors: The impact of polycrystalline Si doping and oxide composition

Suliman, S. A., Venkataraman, B., Wu, C. T., Ridley, R. S., Dolny, G. M., Awadelkarim, O. O., Fonash, S. J. & Ruzyllo, J., May 1 2003, In : Solid-State Electronics. 47, 5, p. 899-905 7 p.

Research output: Contribution to journalArticle

3 Scopus citations

Electron and hole trapping in the bulk and interface with Si of a thermal oxide grown on the sidewalls and base of a U-shaped silicon trench

Suliman, S. A., Awadelkarim, O. O., Fonash, S. J., Ridley, R. S., Dolny, G. M., Hao, J. & Knoedler, C. M., Jun 1 2002, In : Solid-State Electronics. 46, 6, p. 837-845 9 p.

Research output: Contribution to journalArticle

7 Scopus citations

Fowler-Nordheim and hot carrier reliabilities of U-shaped trench-gated transistors studied by three terminal charge pumping

Passmore, L. J., Sarpatwari, K., Suliman, S. A., Awadelkarim, O. O., Ridley, R., Dolny, G., Michalowicz, J. & Wu, C. T., May 10 2006, In : Thin Solid Films. 504, 1-2, p. 302-306 5 p.

Research output: Contribution to journalArticle

6 Scopus citations

High temperature bias-stress-induced instability in power trench-gated MOSFETs

Hao, J., Rioux, M., Suliman, S. A. & Awadelkarim, O. O., Feb 2014, In : Microelectronics Reliability. 54, 2, p. 374-380 7 p.

Research output: Contribution to journalArticle

5 Scopus citations

Modified three terminal charge pumping technique applied to vertical transistor structures

Passmore, L. J., Sarpatwari, K., Suliman, S. A., Awadelkarim, O. O., Ridley, R., Dolny, G., Michalowicz, J. & Wu, C. T., Dec 1 2005, In : Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23, 5, p. 2189-2193 5 p.

Research output: Contribution to journalArticle

10 Scopus citations

On the 0.34 eV Hole trap in irradiated boron-doped silicon

Awadelkarim, O. O., Suliman, S. A. & Monemar, B., Dec 1 1989, In : Radiation Effects and Defects in Solids. 111-112, 1-2, p. 273-280 8 p.

Research output: Contribution to journalArticle

2 Scopus citations
2 Scopus citations

The dependence of UMOSFET characteristics and reliability on geometry and processing

Suliman, S. A., Gollagunta, N., Trabzon, L., Hao, J., Ridley, R. S., Knoedler, C. M., Dolny, G. M., Awadelkarim, O. O. & Fonash, S. J., Jun 1 2001, In : Semiconductor Science and Technology. 16, 6, p. 447-454 8 p.

Research output: Contribution to journalArticle

9 Scopus citations

The effects of channel boron-doping on the performance and hot electron reliability of N-channel trench UMOSFETs

Suliman, S. A., Awadelkarim, O. O., Fonash, S. J., Dolny, G. M., Hao, J., Ridley, R. S. & Knoedler, C. M., May 1 2001, In : Solid-State Electronics. 45, 5, p. 655-661 7 p.

Research output: Contribution to journalArticle

4 Scopus citations

The impact of trench geometry and processing on the performance and reliability of low voltage power UMOSFETs

Suliman, S. A., Gallogunta, N., Trabzon, L., Hao, J., Dolny, G., Ridley, R., Grebs, T., Benjamin, J., Kocon, C., Zeng, J., Knoedler, C. M., Horn, M., Awadelkarim, O. O., Fonash, S. J. & Ruzyllo, J., 2001, In : Annual Proceedings - Reliability Physics (Symposium). p. 308-314 7 p.

Research output: Contribution to journalArticle

4 Scopus citations