• 4641 Citations
  • 21 h-Index
20112019
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Research Output 2011 2019

2019

A biomimetic 2D transistor for audiomorphic computing

Das, S., Dodda, A. & Das, S., Dec 1 2019, In : Nature communications. 10, 1, 3450.

Research output: Contribution to journalArticle

Open Access
Biomimetic Materials
Strigiformes
Biomimetics
biomimetics
Transistors
16 Citations (Scopus)

A roadmap for electronic grade 2D materials

Briggs, N., Subramanian, S., Lin, Z., Li, X., Zhang, X., Zhang, K., Xiao, K., Geohegan, D., Wallace, R., Chen, L. Q., Terrones, M., Ebrahimi, A., Das, S., Redwing, J., Hinkle, C., Momeni, K., Van Duin, A., Crespi, V., Kar, S. & Robinson, J. A., Jan 17 2019, In : 2D Materials. 6, 2, 022001.

Research output: Contribution to journalReview article

Open Access
grade
engineering
electronics
molybdenum disulfides
Tungsten
1 Citation (Scopus)

Biological physically unclonable function

Wali, A., Dodda, A., Wu, Y., Pannone, A., Reddy Usthili, L. K., Ozdemir, S. K., Ozbolat, I. T. & Das, S., Dec 1 2019, In : Communications Physics. 2, 1, 39.

Research output: Contribution to journalArticle

Open Access
random numbers
hardware
entropy
reverse engineering
computer programs
3 Citations (Scopus)

Carbon doping of WS2 monolayers: Bandgap reduction and p-type doping transport

Zhang, F., Lu, Y., Schulman, D. S., Zhang, T., Fujisawa, K., Lin, Z., Lei, Y., LauraElias, A., Das, S., Sinnott, S. B. & Terrones, M., Jan 1 2019, In : Science Advances. 5, 5, aav5003.

Research output: Contribution to journalArticle

Open Access
carbon
hydrogen
electronics
routes
chemical properties
9 Citations (Scopus)

Defect-Controlled Nucleation and Orientation of WSe 2 on hBN: A Route to Single-Crystal Epitaxial Monolayers

Zhang, X., Zhang, F., Wang, Y., Schulman, D. S., Zhang, T., Bansal, A., Alem, N., Das, S., Crespi, V. H., Terrones Maldonado, M. & Redwing, J. M., Mar 26 2019, In : ACS nano. 13, 3, p. 3341-3352 12 p.

Research output: Contribution to journalArticle

Monolayers
Nucleation
routes
Single crystals
nucleation
5 Citations (Scopus)

Electrochemical Polishing of Two-Dimensional Materials

Sebastian, A., Zhang, F., Dodda, A., May-Rawding, D., Liu, H., Zhang, T., Terrones Maldonado, M. & Das, S., Jan 22 2019, In : ACS nano. 13, 1, p. 78-86 9 p.

Research output: Contribution to journalArticle

Electrolytic polishing
polishing
Monolayers
vapor deposition
integrity

Extraordinary Radiation Hardness of Atomically Thin MoS 2

Arnold, A. J., Shi, T., Jovanovic, I. & Das, S., Feb 27 2019, In : ACS Applied Materials and Interfaces. 11, 8, p. 8391-8399 9 p.

Research output: Contribution to journalArticle

Hardness
Radiation
Electronic equipment
Radiation damage
Semiconductor materials
1 Citation (Scopus)

Gaussian synapses for probabilistic neural networks

Sebastian, A., Pannone, A., Subbulakshmi Radhakrishnan, S. & Das, S., Dec 1 2019, In : Nature communications. 10, 1, 4199.

Research output: Contribution to journalArticle

Open Access
synapses
Synapses
molybdenum disulfides
Neural networks
Phosphorus

Mask-free patterning and selective CVD-growth of 2D-TMDCs semiconductors

Alameri, D., Nasr, J. R., Karbach, D., Liu, Y., Divan, R., Das, S. & Kuljanishvili, I., Jul 24 2019, In : Semiconductor Science and Technology. 34, 8, 085010.

Research output: Contribution to journalArticle

Masks
Chemical vapor deposition
Nanostructures
masks
vapor deposition
4 Citations (Scopus)

Mobility Deception in Nanoscale Transistors: An Untold Contact Story

Nasr, J. R., Schulman, D. S., Sebastian, A., Horn, M. W. & Das, S., Jan 11 2019, In : Advanced Materials. 31, 2, 1806020.

Research output: Contribution to journalArticle

Field effect transistors
Transistors
Nanostructured materials
Geometry
Benchmarking
3 Citations (Scopus)
Field effect transistors
Hydrogen
Monolayers
Transistors
Fabrication
2018

2-Transistor schmitt trigger based on 2D electrostrictive field effect transistors

Thakuria, N., Schulmarr, D., Das, S. & Gupta, S. K., Aug 20 2018, 2018 76th Device Research Conference, DRC 2018. Institute of Electrical and Electronics Engineers Inc., Vol. 2018-June. 8442149

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Field effect transistors
Transistors
Modulation
Energy gap
Capacitance
59 Citations (Scopus)

Contact engineering for 2D materials and devices

Schulman, D. S., Arnold, A. J. & Das, S., May 7 2018, In : Chemical Society Reviews. 47, 9, p. 3037-3058 22 p.

Research output: Contribution to journalReview article

Fermi level
Electronic properties
Telecommunication links
Metals
9 Citations (Scopus)

Defect dynamics in 2-D MoS2 probed by using machine learning, atomistic simulations, and high-resolution microscopy

Patra, T. K., Zhang, F., Schulman, D. S., Chan, H., Cherukara, M. J., Terrones Maldonado, M., Das, S., Narayanan, B. & Sankaranarayanan, S. K. R. S., Aug 28 2018, In : ACS nano. 12, 8, p. 8006-8016 11 p.

Research output: Contribution to journalArticle

machine learning
Learning systems
Microscopic examination
microscopy
Molecular dynamics
1 Citation (Scopus)

Guest Editorial: Special Issue on 2-D Materials for Electronic, Optoelectronic, and Sensor Devices

Bhat, N., Das, S., Esseni, D., Liang, G., Moshkalev, S. A., Muneta, I., Schwierz, F., Teherani, J. T., De Vittorio, D. & Yoon, Y., Oct 1 2018, In : IEEE Transactions on Electron Devices. 65, 10, p. 4034-4039 6 p., 8469130.

Research output: Contribution to journalEditorial

Optoelectronic devices
Sensors
1 Citation (Scopus)

In Situ Optical Tracking of Electroablation in Two-Dimensional Transition-Metal Dichalcogenides

Kumar, A., Sebastian, A., Das, S. & Ringe, E., Nov 28 2018, In : ACS Applied Materials and Interfaces. 10, 47, p. 40773-40780 8 p.

Research output: Contribution to journalArticle

Transition metals
Optoelectronic devices
Spectroscopy
Monolayers
Optical properties

Low-temperature metalorganic chemical vapor deposition of molybdenum disulfide on multicomponent glass substrates

Simonson, N. A., Nasr, J. R., Subramanian, S., Jariwala, B., Zhao, R., Das, S. & Robinson, J. A., Sep 1 2018, In : FlatChem. 11, p. 32-37 6 p.

Research output: Contribution to journalArticle

Metallorganic chemical vapor deposition
Molybdenum
Glass
Substrates
Growth temperature
9 Citations (Scopus)

Research Update: Recent progress on 2D materials beyond graphene: From ripples, defects, intercalation, and valley dynamics to straintronics and power dissipation

Lin, Z., Lei, Y., Subramanian, S., Briggs, N., Wang, Y., Lo, C. L., Yalon, E., Lloyd, D., Wu, S., Koski, K., Clark, R., Das, S., Wallace, R. M., Kuech, T., Bunch, J. S., Li, X., Chen, Z., Pop, E., Crespi, V. H., Robinson, J. A. & 1 others, Terrones, M., Aug 1 2018, In : APL Materials. 6, 8, 080701.

Research output: Contribution to journalArticle

Graphite
Intercalation
Graphene
Energy dissipation
Defects

Steep slope 2D strain field effect transistor: 2D-SFET

Schulman, D., Arnold, A. & Das, S., Jul 3 2018, 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018. Institute of Electrical and Electronics Engineers Inc., p. 1-2 2 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Field effect transistors
field effect transistors
slopes
scaling
LSI circuits
5 Citations (Scopus)

Superior Electro-Oxidation and Corrosion Resistance of Monolayer Transition Metal Disulfides

Schulman, D. S., May-Rawding, D., Zhang, F., Buzzell, D., Alem, N. & Das, S., Jan 31 2018, In : ACS Applied Materials and Interfaces. 10, 4, p. 4285-4294 10 p.

Research output: Contribution to journalArticle

Electrooxidation
Oxidation resistance
Disulfides
Transition metals
Corrosion resistance

The electrothermal conductance and heat capacity of black phosphorus

Sengupta, P., Das, S. & Shi, J., Mar 14 2018, In : Journal of Chemical Physics. 148, 10, 104701.

Research output: Contribution to journalArticle

Phosphorus
Specific heat
phosphorus
specific heat
heat
5 Citations (Scopus)

Three-Dimensional Integrated X-ray Diffraction Imaging of a Native Strain in Multi-Layered WSe2

Cherukara, M. J., Schulmann, D. S., Sasikumar, K., Arnold, A. J., Chan, H., Sadasivam, S., Cha, W., Maser, J., Das, S., Sankaranarayanan, S. K. R. S. & Harder, R. J., Mar 14 2018, In : Nano letters. 18, 3, p. 1993-2000 8 p.

Research output: Contribution to journalArticle

Imaging techniques
X ray diffraction
diffraction
x rays
flakes
2017
1 Citation (Scopus)

2D-EFET - A novel beyond Boltzmann transistor

Das, S., Aug 1 2017, 75th Annual Device Research Conference, DRC 2017. Institute of Electrical and Electronics Engineers Inc., 7999476. (Device Research Conference - Conference Digest, DRC).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

MOSFET devices
Transistors
Electric potential
Electronics industry
Drain current
6 Citations (Scopus)

Anomalous Corrosion of Bulk Transition Metal Diselenides Leading to Stable Monolayers

Huang, Y. T., Dodda, A., Schulman, D. S., Sebastian, A., Zhang, F., Buzzell, D., Terrones, M., Feng, S. P. & Das, S., Nov 8 2017, In : ACS Applied Materials and Interfaces. 9, 44, p. 39059-39068 10 p.

Research output: Contribution to journalArticle

Transition metals
Monolayers
Corrosion
Crystalline materials
Physical chemistry
12 Citations (Scopus)

Facile Electrochemical Synthesis of 2D Monolayers for High-Performance Thin-Film Transistors

Schulman, D. S., Sebastian, A., Buzzell, D., Huang, Y. T., Arnold, A. J. & Das, S., Dec 27 2017, In : ACS Applied Materials and Interfaces. 9, 51, p. 44617-44624 8 p.

Research output: Contribution to journalArticle

Thin film transistors
Monolayers
Ablation
Electrochemical corrosion
Electron injection
66 Citations (Scopus)

Mimicking Neurotransmitter Release in Chemical Synapses via Hysteresis Engineering in MoS2 Transistors

Arnold, A. J., Razavieh, A., Nasr, J. R., Schulman, D. S., Eichfeld, C. & Das, S., Mar 28 2017, In : ACS Nano. 11, 3, p. 3110-3118 9 p.

Research output: Contribution to journalArticle

neurotransmitters
synapses
Field effect transistors
Neurotransmitter Agents
Hysteresis
10 Citations (Scopus)

The Prospect of Two-Dimensional Heterostructures: A Review of Recent Breakthroughs

Schulman, D. S., Arnold, A. J., Razavieh, A., Nasr, J. & Das, S., Jun 1 2017, In : IEEE Nanotechnology Magazine. 11, 2, p. 6-17 12 p., 7891558.

Research output: Contribution to journalArticle

Heterojunctions
D region
Carrier mobility
Passivation
Electronic properties
2016
14 Citations (Scopus)

A Self-Limiting Electro-Ablation Technique for the Top-Down Synthesis of Large-Area Monolayer Flakes of 2D Materials

Das, S., Bera, M. K., Tong, S., Narayanan, B., Kamath, G., Mane, A., Paulikas, A. P., Antonio, M. R., Sankaranarayanan, S. K. R. S. & Roelofs, A. K., Jun 21 2016, In : Scientific reports. 6, 28195.

Research output: Contribution to journalArticle

Ablation
Monolayers
Substrates
Gibbs free energy
Hydrogen Peroxide
high gain
low noise
logic
field effect transistors

Erratum: All Two-Dimensional, Flexible, Transparent, and Thinnest Thin Film Transistor (Nano Letters (2014) 14:5 (2861?2866) DOI: 10.1021/nl5009037)

Das, S., Gulotty, R., Sumant, A. V. & Roelofs, A., Feb 10 2016, In : Nano letters. 16, 2, 1 p.

Research output: Contribution to journalComment/debate

Thin film transistors
transistors
thin films
3 Citations (Scopus)

Erratum: Ambipolar Phosphorene Field Effect Transistor (ACS Nano (2014) 8:11 (11730-11738) DOI: 10.1021/nn505868h)

Das, S., Demarteau, M. & Roelofs, A., Feb 23 2016, In : ACS nano. 10, 2, 1 p.

Research output: Contribution to journalComment/debate

Field effect transistors
4 Citations (Scopus)

Erratum: Tunable Transport Gap in Phosphorene (Nano Letters (2014) 14:10 (5733-5739) 10.1021/nl5025535)

Das, S., Zhang, W., Demarteau, M., Hoffmann, A., Dubey, M. & Roelofs, A., Mar 9 2016, In : Nano letters. 16, 3, 1 p.

Research output: Contribution to journalComment/debate

17 Citations (Scopus)

Transition metal dichalcogenide schottky barrier transistors: A device analysis and material comparison

Appenzeller, J., Zhang, F., Das, S. & Knoch, J., May 5 2016, 2D Materials for Nanoelectronics. CRC Press, p. 207-240 34 p.

Research output: Chapter in Book/Report/Conference proceedingChapter

Transition metals
Transistors
transistors
transition metals
24 Citations (Scopus)
Field effect transistors
Energy gap
Electric potential
Amplification
Electrostatics
2015
8 Citations (Scopus)

A small signal amplifier based on ionic liquid gated black phosphorous field effect transistor

Das, S., Zhang, W., Thoutam, L. R., Xiao, Z., Hoffmann, A., Demarteau, M. & Roelofs, A., Jun 1 2015, In : IEEE Electron Device Letters. 36, 6, p. 621-623 3 p., 7084130.

Research output: Contribution to journalArticle

Ionic Liquids
Field effect transistors
Ionic liquids
Phosphorus
Resistors
203 Citations (Scopus)

Beyond Graphene: Progress in Novel Two-Dimensional Materials and van der Waals Solids

Das, S., Robinson, J. A., Dubey, M., Terrones, H. & Terrones Maldonado, M., Jul 1 2015, In : Annual Review of Materials Research. 45, p. 1-27 27 p.

Research output: Contribution to journalArticle

Graphite
Graphene
Photonic devices
Chemical properties
Transition metals
31 Citations (Scopus)

Low-frequency noise in MoSe2 field effect transistors

Das, S. R., Kwon, J., Prakash, A., Delker, C. J., Das, S. & Janes, D. B., Feb 23 2015, In : Applied Physics Letters. 106, 8, 083507.

Research output: Contribution to journalArticle

field effect transistors
low frequencies
atmospheric temperature
noise spectra
low noise
42 Citations (Scopus)

Nb-doped single crystalline MoS2 field effect transistor

Das, S., Demarteau, M. & Roelofs, A., Apr 27 2015, In : Applied Physics Letters. 106, 17, 173506.

Research output: Contribution to journalArticle

niobium
field effect transistors
flakes
transistors
electrostatics
61 Citations (Scopus)

Origin of the turn-on temperature behavior in WTe2

Wang, Y. L., Thoutam, L. R., Xiao, Z. L., Hu, J., Das, S., Mao, Z. Q., Wei, J., Divan, R., Luican-Mayer, A., Crabtree, G. W. & Kwok, W. K., Nov 3 2015, In : Physical Review B - Condensed Matter and Materials Physics. 92, 18, 180402.

Research output: Contribution to journalArticle

Metal insulator transition
insulators
magnetic fields
Magnetic fields
electrical resistivity
907 Citations (Scopus)

Recent Advances in Two-Dimensional Materials beyond Graphene

Bhimanapati, G. R., Lin, Z., Meunier, V., Jung, Y., Cha, J., Das, S., Xiao, D., Son, Y., Strano, M. S., Cooper, V. R., Liang, L., Louie, S. G., Ringe, E., Zhou, W., Kim, S. S., Naik, R. R., Sumpter, B. G., Terrones, H., Xia, F., Wang, Y. & 7 others, Zhu, J., Akinwande, D., Alem, N., Schuller, J. A., Schaak, R. E., Terrones, M. & Robinson, J. A., Nov 6 2015, In : ACS nano. 9, 12, p. 11509-11539 31 p.

Research output: Contribution to journalReview article

Graphite
Graphene
graphene
transition metals
Transition metals
73 Citations (Scopus)

Temperature-Dependent Three-Dimensional Anisotropy of the Magnetoresistance in WTe2

Thoutam, L. R., Wang, Y. L., Xiao, Z. L., Das, S., Luican-Mayer, A., Divan, R., Crabtree, G. W. & Kwok, W. K., Jul 22 2015, In : Physical Review Letters. 115, 4, 046602.

Research output: Contribution to journalArticle

anisotropy
scaling
Fermi liquids
metals
temperature
2014
199 Citations (Scopus)

All two-dimensional, flexible, transparent, and thinnest thin film transistor

Das, S., Gulotty, R., Sumant, A. V. & Roelofs, A., May 14 2014, In : Nano letters. 14, 5, p. 2861-2866 6 p.

Research output: Contribution to journalArticle

Thin film transistors
transistors
thin films
Graphite
Graphene
228 Citations (Scopus)

Ambipolar phosphorene field effect transistor

Das, S., Demarteau, M. & Roelofs, A., Nov 25 2014, In : ACS nano. 8, 11, p. 11730-11738 9 p.

Research output: Contribution to journalArticle

Field effect transistors
field effect transistors
Electrons
Gate dielectrics
Contact resistance
20 Citations (Scopus)

Effect of diameter variation on electrical characteristics of schottky barrier indium arsenide nanowire field-effect transistors

Razavieh, A., Mohseni, P. K., Jung, K., Mehrotra, S., Das, S., Suslov, S., Li, X., Klimeck, G., Janes, D. B. & Appenzeller, J., Jun 24 2014, In : ACS nano. 8, 6, p. 6281-6287 7 p.

Research output: Contribution to journalArticle

Indium arsenide
Field effect transistors
Nanowires
indium
nanowires
16 Citations (Scopus)

Effect of hydrogen flow during cooling phase to achieve uniform and repeatable growth of bilayer graphene on copper foils over large area

Gulotty, R., Das, S., Liu, Y. & Sumant, A. V., Jan 1 2014, In : Carbon. 77, p. 341-350 10 p.

Research output: Contribution to journalArticle

Graphite
Graphene
Metal foil
Copper
Hydrogen
7 Citations (Scopus)

Electrostatically doped WSe2 CMOS inverter

Das, S. & Roelofs, A., Jan 1 2014, 72nd Device Research Conference, DRC 2014 - Conference Digest. Institute of Electrical and Electronics Engineers Inc., p. 185-186 2 p. 6872359. (Device Research Conference - Conference Digest, DRC).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Doping (additives)
Transition metals
Electrostatics
Nanoelectronics
Electrons
54 Citations (Scopus)

High gain, low noise, fully complementary logic inverter based on bi-layer WSe2 field effect transistors

Das, S., Dubey, M. & Roelofs, A., Aug 25 2014, In : Applied Physics Letters. 105, 8, 083511.

Research output: Contribution to journalArticle

high gain
low noise
logic
margins
field effect transistors
5 Citations (Scopus)

Ionic gated WSe2 FETs: Towards transparent Schottky barriers

Prakash, A., Das, S., Mehta, R., Chen, Z. & Appenzeller, J., Jan 1 2014, 72nd Device Research Conference, DRC 2014 - Conference Digest. Institute of Electrical and Electronics Engineers Inc., p. 129-130 2 p. 6872331. (Device Research Conference - Conference Digest, DRC).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Field effect transistors
Transition metals
Fermi level
Metals
Ionic liquids
115 Citations (Scopus)

Toward low-power electronics: Tunneling phenomena in transition metal dichalcogenides

Das, S., Prakash, A., Salazar, R. & Appenzeller, J., Feb 25 2014, In : ACS nano. 8, 2, p. 1681-1689 9 p.

Research output: Contribution to journalArticle

Low power electronics
Field effect transistors
Transition metals
transition metals
electronics
428 Citations (Scopus)

Tunable transport gap in phosphorene

Das, S., Zhang, W., Demarteau, M., Hoffmann, A., Dubey, M. & Roelofs, A., Oct 8 2014, In : Nano letters. 14, 10, p. 5733-5739 7 p.

Research output: Contribution to journalArticle

Field effect transistors
Hole mobility
field effect transistors
Electrons
Fermi level