• 4989 Citations
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20112020

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2016

Transition metal dichalcogenide schottky barrier transistors: A device analysis and material comparison

Appenzeller, J., Zhang, F., Das, S. & Knoch, J., May 5 2016, 2D Materials for Nanoelectronics. CRC Press, p. 207-240 34 p.

Research output: Chapter in Book/Report/Conference proceedingChapter

18 Scopus citations