• 4602 Citations
  • 21 h-Index
20112019
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Research Output 2011 2019

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Conference contribution
2018

2-Transistor schmitt trigger based on 2D electrostrictive field effect transistors

Thakuria, N., Schulmarr, D., Das, S. & Gupta, S. K., Aug 20 2018, 2018 76th Device Research Conference, DRC 2018. Institute of Electrical and Electronics Engineers Inc., Vol. 2018-June. 8442149

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Field effect transistors
Transistors
Modulation
Energy gap
Capacitance

Steep slope 2D strain field effect transistor: 2D-SFET

Schulman, D., Arnold, A. & Das, S., Jul 3 2018, 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018. Institute of Electrical and Electronics Engineers Inc., p. 1-2 2 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Field effect transistors
field effect transistors
slopes
scaling
LSI circuits
2017
1 Citation (Scopus)

2D-EFET - A novel beyond Boltzmann transistor

Das, S., Aug 1 2017, 75th Annual Device Research Conference, DRC 2017. Institute of Electrical and Electronics Engineers Inc., 7999476. (Device Research Conference - Conference Digest, DRC).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

MOSFET devices
Transistors
Electric potential
Electronics industry
Drain current
2014
7 Citations (Scopus)

Electrostatically doped WSe2 CMOS inverter

Das, S. & Roelofs, A., Jan 1 2014, 72nd Device Research Conference, DRC 2014 - Conference Digest. Institute of Electrical and Electronics Engineers Inc., p. 185-186 2 p. 6872359. (Device Research Conference - Conference Digest, DRC).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Doping (additives)
Transition metals
Electrostatics
Nanoelectronics
Electrons
5 Citations (Scopus)

Ionic gated WSe2 FETs: Towards transparent Schottky barriers

Prakash, A., Das, S., Mehta, R., Chen, Z. & Appenzeller, J., Jan 1 2014, 72nd Device Research Conference, DRC 2014 - Conference Digest. Institute of Electrical and Electronics Engineers Inc., p. 129-130 2 p. 6872331. (Device Research Conference - Conference Digest, DRC).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Field effect transistors
Transition metals
Fermi level
Metals
Ionic liquids
2013
13 Citations (Scopus)

Evaluating the scalability of multilayer MoS2 transistors

Das, S. & Appenzeller, J., Dec 16 2013, 71st Device Research Conference, DRC 2013 - Conference Digest. p. 153-154 2 p. 6633839

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Scalability
Multilayers
Transistors
2011
4 Citations (Scopus)

An all-graphene radio frequency low noise amplifier

Das, S. & Appenzeller, J., Aug 1 2011, 2011 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2011 - Digest of Papers. 5940628. (Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Radio frequency amplifiers
Low noise amplifiers
Graphene
High frequency amplifiers
Networks (circuits)