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Sukwon Choi

    • 269 Citations
    • 9 h-Index
    20062019
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    Fingerprint Dive into the research topics where Sukwon Choi is active. These topic labels come from the works of this person. Together they form a unique fingerprint.

    • 3 Similar Profiles
    High electron mobility transistors Engineering & Materials Science
    high electron mobility transistors Physics & Astronomy
    gallium nitrides Physics & Astronomy
    Temperature Engineering & Materials Science
    MEMS Engineering & Materials Science
    Electric fields Engineering & Materials Science
    Energy gap Engineering & Materials Science
    Fuel cells Engineering & Materials Science

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    Research Output 2006 2019

    • 269 Citations
    • 9 h-Index
    • 22 Article
    • 7 Conference contribution
    • 1 Chapter
    • 1 Paper
    1 Citation (Scopus)

    Effect of Ge doping on growth stress and conductivity in Al x Ga 1-x N

    Bansal, A., Wang, K., Lundh, J. S., Choi, S. & Redwing, J. M., Apr 8 2019, In : Applied Physics Letters. 114, 14, 142101.

    Research output: Contribution to journal › Article

    Open Access
    germanium
    conductivity
    silicon
    tensile stress
    cracks

    Enhancement of the electrical and thermal performance of AlGaN/GaN HEMTs using a novel resistive field plate structure

    Chatterjee, B., Kim, T. K., Song, Y., Lundh, J. S., Han, S. W., Shoemaker, D., Lee, J. M., Cho, M. U., Chu, R., Kwak, J. S. & Choi, S., May 2019, Proceedings of the 18th InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITherm 2019. IEEE Computer Society, p. 362-369 8 p. 8757330. (InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITHERM; vol. 2019-May).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

    High electron mobility transistors
    Electric fields
    Gallium
    Zinc oxide
    Electric breakdown

    Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor

    Lundh, J. S., Chatterjee, B., Song, Y., Baca, A. G., Kaplar, R. J., Beechem, T. E., Allerman, A. A., Armstrong, A. M., Klein, B. A., Bansal, A., Talreja, D., Pogrebnyakov, A., Heller, E., Gopalan, V., Redwing, J. M., Foley, B. M. & Choi, S., Oct 7 2019, In : Applied Physics Letters. 115, 15, 153503.

    Research output: Contribution to journal › Article

    high electron mobility transistors
    thermal analysis
    gallium nitrides
    aluminum nitrides
    ternary alloys

    Polarization modulation effect of BeO on AlGaN/GaN high-electron-mobility transistors

    Wang, W., Lee, S. M., Pouladi, S., Chen, J., Shervin, S., Yoon, S., Yum, J. H., Larsen, E. S., Bielawski, C. W., Chatterjee, B., Choi, S., Oh, J. & Ryou, J. H., Sep 2 2019, In : Applied Physics Letters. 115, 10, 103502.

    Research output: Contribution to journal › Article

    Open Access
    polarization modulation
    high electron mobility transistors
    quantum wells
    gas density
    polarization
    2 Citations (Scopus)

    Thermal Management and Characterization of High-Power Wide-Bandgap Semiconductor Electronic and Photonic Devices in Automotive Applications

    Oh, S. K., Lundh, J. S., Shervin, S., Chatterjee, B., Lee, D. K., Choi, S., Kwak, J. S. & Ryou, J. H., Jun 1 2019, In : Journal of Electronic Packaging, Transactions of the ASME. 141, 2, 020801.

    Research output: Contribution to journal › Article

    Photonic devices
    Power electronics
    Temperature control
    Photonics
    Light emitting diodes