This is a proposal requesting consideration for a Small Grant for Exploratory Research (SGER) award. The proposal describes a one-year activity in which the PI will conduct an investigation on spontaneous emission control and enhancement in microcavities fabricated from wide bandgap III-Nitride semiconductors. The nature of the epitaxial growth of the HI-Nitride such as InGaN exhibited cluster growths that caused broadening of the emission spectrum due to random distribution of cluster composition and dimensions. In addition, state filling can occur in such small clusters. Enhanced spontaneous emission rate in microcavities has been shown in other material systems such as GaAs. The proposal is aimed at demonstrations of microcavities in III-Nitride system for the enhancement of the spontaneous emission for many device applications.
|Effective start/end date||8/15/99 → 7/31/00|
- National Science Foundation: $50,000.00