(00l) epitaxial Ag (Ta0.5 Nb0.5) O3 thin films on (001) SrRu O3 (001) LaAl O3 substrates by chemical solution deposition

M. B. Telli, S. S.N. Bharadwaja, M. D. Biegalski, J. G. Cheng, S. Trolier-Mckinstry

Research output: Contribution to journalArticle

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Abstract

Epitaxial silver tantalate niobate, Ag (Ta0.5 Nb0.5) O3 (ATN), thin films on (001) SrRu O3 (001) LaAl O3 substrates were deposited by a chemical solution deposition route. The solution was prepared using niobium ethoxide, tantalum ethoxide, and silver nitrate precursors in a 2-methoxyethanol and pyridine solvents. Films were crystallized between 450 and 800 °C in O2 ambient. X-ray diffraction data demonstrated cube-on-cube epitaxy, with a limited reaction between the ATN thin films and the SrRu O3. The dielectric constants of the epitaxial films improved from 260 to 360 at 100 kHz with an increase in the crystallization temperatures from 500 to 800 °C. It is speculated that the phase transition between the orthorhombic M2 and M3 phases (which occurs at ∼330 K in ceramics) is shifted to lower temperatures (≤99 K) for the films. For a film that was crystallized at 750 °C, the frequency dependence was small (≤20.3%) within the range of 1 Hz-100 kHz, the capacitance change, ΔCC, was small (≤12.1%) over the temperature range of -20-120 °C with a corresponding temperature coefficient of capacitance of -0.11%°C at room temperature at 100 kHz, and the dc field tunability was not hysteretic, but was limited to 4.8% with a 150 kVcm bias.

Original languageEnglish (US)
Article number014111
JournalJournal of Applied Physics
Volume101
Issue number1
DOIs
StatePublished - Jan 24 2007

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thin films
capacitance
silver nitrates
niobates
tantalum
niobium
epitaxy
temperature
pyridines
silver
routes
ceramics
crystallization
permittivity
room temperature
coefficients
diffraction
x rays

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

@article{1a9a2927ad134b37ac2c8424f7e94fd8,
title = "(00l) epitaxial Ag (Ta0.5 Nb0.5) O3 thin films on (001) SrRu O3 (001) LaAl O3 substrates by chemical solution deposition",
abstract = "Epitaxial silver tantalate niobate, Ag (Ta0.5 Nb0.5) O3 (ATN), thin films on (001) SrRu O3 (001) LaAl O3 substrates were deposited by a chemical solution deposition route. The solution was prepared using niobium ethoxide, tantalum ethoxide, and silver nitrate precursors in a 2-methoxyethanol and pyridine solvents. Films were crystallized between 450 and 800 °C in O2 ambient. X-ray diffraction data demonstrated cube-on-cube epitaxy, with a limited reaction between the ATN thin films and the SrRu O3. The dielectric constants of the epitaxial films improved from 260 to 360 at 100 kHz with an increase in the crystallization temperatures from 500 to 800 °C. It is speculated that the phase transition between the orthorhombic M2 and M3 phases (which occurs at ∼330 K in ceramics) is shifted to lower temperatures (≤99 K) for the films. For a film that was crystallized at 750 °C, the frequency dependence was small (≤20.3{\%}) within the range of 1 Hz-100 kHz, the capacitance change, ΔCC, was small (≤12.1{\%}) over the temperature range of -20-120 °C with a corresponding temperature coefficient of capacitance of -0.11{\%}°C at room temperature at 100 kHz, and the dc field tunability was not hysteretic, but was limited to 4.8{\%} with a 150 kVcm bias.",
author = "Telli, {M. B.} and Bharadwaja, {S. S.N.} and Biegalski, {M. D.} and Cheng, {J. G.} and S. Trolier-Mckinstry",
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(00l) epitaxial Ag (Ta0.5 Nb0.5) O3 thin films on (001) SrRu O3 (001) LaAl O3 substrates by chemical solution deposition. / Telli, M. B.; Bharadwaja, S. S.N.; Biegalski, M. D.; Cheng, J. G.; Trolier-Mckinstry, S.

In: Journal of Applied Physics, Vol. 101, No. 1, 014111, 24.01.2007.

Research output: Contribution to journalArticle

TY - JOUR

T1 - (00l) epitaxial Ag (Ta0.5 Nb0.5) O3 thin films on (001) SrRu O3 (001) LaAl O3 substrates by chemical solution deposition

AU - Telli, M. B.

AU - Bharadwaja, S. S.N.

AU - Biegalski, M. D.

AU - Cheng, J. G.

AU - Trolier-Mckinstry, S.

PY - 2007/1/24

Y1 - 2007/1/24

N2 - Epitaxial silver tantalate niobate, Ag (Ta0.5 Nb0.5) O3 (ATN), thin films on (001) SrRu O3 (001) LaAl O3 substrates were deposited by a chemical solution deposition route. The solution was prepared using niobium ethoxide, tantalum ethoxide, and silver nitrate precursors in a 2-methoxyethanol and pyridine solvents. Films were crystallized between 450 and 800 °C in O2 ambient. X-ray diffraction data demonstrated cube-on-cube epitaxy, with a limited reaction between the ATN thin films and the SrRu O3. The dielectric constants of the epitaxial films improved from 260 to 360 at 100 kHz with an increase in the crystallization temperatures from 500 to 800 °C. It is speculated that the phase transition between the orthorhombic M2 and M3 phases (which occurs at ∼330 K in ceramics) is shifted to lower temperatures (≤99 K) for the films. For a film that was crystallized at 750 °C, the frequency dependence was small (≤20.3%) within the range of 1 Hz-100 kHz, the capacitance change, ΔCC, was small (≤12.1%) over the temperature range of -20-120 °C with a corresponding temperature coefficient of capacitance of -0.11%°C at room temperature at 100 kHz, and the dc field tunability was not hysteretic, but was limited to 4.8% with a 150 kVcm bias.

AB - Epitaxial silver tantalate niobate, Ag (Ta0.5 Nb0.5) O3 (ATN), thin films on (001) SrRu O3 (001) LaAl O3 substrates were deposited by a chemical solution deposition route. The solution was prepared using niobium ethoxide, tantalum ethoxide, and silver nitrate precursors in a 2-methoxyethanol and pyridine solvents. Films were crystallized between 450 and 800 °C in O2 ambient. X-ray diffraction data demonstrated cube-on-cube epitaxy, with a limited reaction between the ATN thin films and the SrRu O3. The dielectric constants of the epitaxial films improved from 260 to 360 at 100 kHz with an increase in the crystallization temperatures from 500 to 800 °C. It is speculated that the phase transition between the orthorhombic M2 and M3 phases (which occurs at ∼330 K in ceramics) is shifted to lower temperatures (≤99 K) for the films. For a film that was crystallized at 750 °C, the frequency dependence was small (≤20.3%) within the range of 1 Hz-100 kHz, the capacitance change, ΔCC, was small (≤12.1%) over the temperature range of -20-120 °C with a corresponding temperature coefficient of capacitance of -0.11%°C at room temperature at 100 kHz, and the dc field tunability was not hysteretic, but was limited to 4.8% with a 150 kVcm bias.

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