(00l) Epitaxial AgTaO3 and AgNbO3 thin films on (001)SrRuO3/(001)LaAlO3 substrates by chemical solution deposition

M. B. Telli, S. S.N. Bharadwaja, M. D. Biegalski, S. Trolier-Mckinstry

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(00l) epitaxial AgTa O3 and AgNb O3 thin films were prepared on (001) SrRu O3 (001) LaAl O3 substrates by chemical solution deposition. The dielectric constants and loss of ∼300 nm thick films were 110±10 and 0.025±0.005 for AgTa O3 and 550±55 and 0.020±0.005 for AgNb O3 at room temperature. In both films, the temperature coefficient of capacitance is smaller than that for bulk ceramics of the same composition. The capacitance changes from -20 to 120 °C were ≤1.2% for AgTa O3 and ≤3.6% for AgNb O3. The tunability of the AgTa O3 film was 1.6% at 230 kVcm field, while 21% tunability was measured for AgNb O3 at 190 kVcm.

Original languageEnglish (US)
Article number252907
JournalApplied Physics Letters
Issue number25
StatePublished - 2006

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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