(00l) Epitaxial AgTaO3 and AgNbO3 thin films on (001)SrRuO3/(001)LaAlO3 substrates by chemical solution deposition

M. B. Telli, S. S.N. Bharadwaja, M. D. Biegalski, S. Trolier-Mckinstry

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

(00l) epitaxial AgTa O3 and AgNb O3 thin films were prepared on (001) SrRu O3 (001) LaAl O3 substrates by chemical solution deposition. The dielectric constants and loss of ∼300 nm thick films were 110±10 and 0.025±0.005 for AgTa O3 and 550±55 and 0.020±0.005 for AgNb O3 at room temperature. In both films, the temperature coefficient of capacitance is smaller than that for bulk ceramics of the same composition. The capacitance changes from -20 to 120 °C were ≤1.2% for AgTa O3 and ≤3.6% for AgNb O3. The tunability of the AgTa O3 film was 1.6% at 230 kVcm field, while 21% tunability was measured for AgNb O3 at 190 kVcm.

Original languageEnglish (US)
Article number252907
JournalApplied Physics Letters
Volume89
Issue number25
DOIs
StatePublished - Dec 1 2006

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capacitance
thin films
dielectric loss
thick films
ceramics
permittivity
room temperature
coefficients
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

@article{419b87ccf82841ef937306228189ae2a,
title = "(00l) Epitaxial AgTaO3 and AgNbO3 thin films on (001)SrRuO3/(001)LaAlO3 substrates by chemical solution deposition",
abstract = "(00l) epitaxial AgTa O3 and AgNb O3 thin films were prepared on (001) SrRu O3 (001) LaAl O3 substrates by chemical solution deposition. The dielectric constants and loss of ∼300 nm thick films were 110±10 and 0.025±0.005 for AgTa O3 and 550±55 and 0.020±0.005 for AgNb O3 at room temperature. In both films, the temperature coefficient of capacitance is smaller than that for bulk ceramics of the same composition. The capacitance changes from -20 to 120 °C were ≤1.2{\%} for AgTa O3 and ≤3.6{\%} for AgNb O3. The tunability of the AgTa O3 film was 1.6{\%} at 230 kVcm field, while 21{\%} tunability was measured for AgNb O3 at 190 kVcm.",
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(00l) Epitaxial AgTaO3 and AgNbO3 thin films on (001)SrRuO3/(001)LaAlO3 substrates by chemical solution deposition. / Telli, M. B.; Bharadwaja, S. S.N.; Biegalski, M. D.; Trolier-Mckinstry, S.

In: Applied Physics Letters, Vol. 89, No. 25, 252907, 01.12.2006.

Research output: Contribution to journalArticle

TY - JOUR

T1 - (00l) Epitaxial AgTaO3 and AgNbO3 thin films on (001)SrRuO3/(001)LaAlO3 substrates by chemical solution deposition

AU - Telli, M. B.

AU - Bharadwaja, S. S.N.

AU - Biegalski, M. D.

AU - Trolier-Mckinstry, S.

PY - 2006/12/1

Y1 - 2006/12/1

N2 - (00l) epitaxial AgTa O3 and AgNb O3 thin films were prepared on (001) SrRu O3 (001) LaAl O3 substrates by chemical solution deposition. The dielectric constants and loss of ∼300 nm thick films were 110±10 and 0.025±0.005 for AgTa O3 and 550±55 and 0.020±0.005 for AgNb O3 at room temperature. In both films, the temperature coefficient of capacitance is smaller than that for bulk ceramics of the same composition. The capacitance changes from -20 to 120 °C were ≤1.2% for AgTa O3 and ≤3.6% for AgNb O3. The tunability of the AgTa O3 film was 1.6% at 230 kVcm field, while 21% tunability was measured for AgNb O3 at 190 kVcm.

AB - (00l) epitaxial AgTa O3 and AgNb O3 thin films were prepared on (001) SrRu O3 (001) LaAl O3 substrates by chemical solution deposition. The dielectric constants and loss of ∼300 nm thick films were 110±10 and 0.025±0.005 for AgTa O3 and 550±55 and 0.020±0.005 for AgNb O3 at room temperature. In both films, the temperature coefficient of capacitance is smaller than that for bulk ceramics of the same composition. The capacitance changes from -20 to 120 °C were ≤1.2% for AgTa O3 and ≤3.6% for AgNb O3. The tunability of the AgTa O3 film was 1.6% at 230 kVcm field, while 21% tunability was measured for AgNb O3 at 190 kVcm.

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