1200-V normally off GaN-on-Si field-effect transistors with low dynamic on -resistance

Rongming Chu, Andrea Corrion, Mary Chen, Ray Li, Danny Wong, Daniel Zehnder, Brian Hughes, Karim Boutros

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Abstract

This letter reports high-voltage GaN field-effect transistors fabricated on Si substrates. A halide-based plasma treatment was performed to enable normally off operation. Atomic layer deposition of Al2O3 gate insulator was adopted to reduce the gate leakage current. Incorporation of multiple field plates, with one field plate connected to the gate electrode and two field plates connected to the source electrode successfully enabled a high breakdown voltage of 1200 V and low dynamic on-resistance at high-voltage operation.

Original languageEnglish (US)
Article number5735179
Pages (from-to)632-634
Number of pages3
JournalIEEE Electron Device Letters
Volume32
Issue number5
DOIs
StatePublished - May 1 2011

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Chu, R., Corrion, A., Chen, M., Li, R., Wong, D., Zehnder, D., Hughes, B., & Boutros, K. (2011). 1200-V normally off GaN-on-Si field-effect transistors with low dynamic on -resistance. IEEE Electron Device Letters, 32(5), 632-634. [5735179]. https://doi.org/10.1109/LED.2011.2118190