12.5 kV GaN Super-Heterojunction Schottky Barrier Diodes

Sang Woo Han, Jianan Song, Mansura Sadek, Alex Molina, Mona A. Ebrish, Suzanne E. Mohney, Travis J. Anderson, Rongming Chu

Research output: Contribution to journalArticlepeer-review

Abstract

This article reports GaN super-heterojunction Schottky barrier diodes (SHJ-SBDs) with substantially improved performance. Metal-2DEG sidewall n-ohmic contacts were deployed to achieve low contact resistance of $0.75~\Omega ~ \cdot ~mm$ , avoiding the risk of abnormally high contact resistance caused by inaccurate etch depth control. A pGaN notch formed near the cathode successfully eliminated excessive hole conduction caused by the sidewall n-ohmic contact. Isolation was improved by a high-energy Al implantation step. The resulting SHJ-SBD exhibited a breakdown voltage (BV) of 12.5 kV and a specific resistance of 100.8 $\text{m}\Omega ~ \cdot ~cm^{2}$.

Original languageEnglish (US)
Pages (from-to)5736-5741
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume68
Issue number11
DOIs
StatePublished - Nov 1 2021

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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