130 mA mm-1β-Ga2O3metal semiconductor field effect transistor with low-temperature metalorganic vapor phase epitaxy-regrown ohmic contacts

Arkka Bhattacharyya, Saurav Roy, Praneeth Ranga, Daniel Shoemaker, Yiwen Song, James Spencer Lundh, Sukwon Choi, Sriram Krishnamoorthy

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We report on the first demonstration of metalorganic vapor phase epitaxy-regrown (MOVPE) ohmic contacts in an all MOVPE-grown β-Ga2O3 metal semiconductor field effect transistor (MESFET). The low-temperature (600 °C) heavy (n+) Si-doped regrown layers exhibit extremely high conductivity with a sheet resistance of 73 Ω/□ and a record low metal/n+-Ga2O3 contact resistance of 80 mΩ•mm and specific contact resistivity of 8.3 × 10-7 Ω•cm2 were achieved. The fabricated MESFETs exhibit a maximum ON current of 130 mA mm-1 and a high I ON/I OFF ratio of >1010. Thermal characterization was also performed to assess the device self-heating under the high current and power conditions.

Original languageEnglish (US)
Article number076502
JournalApplied Physics Express
Issue number7
StatePublished - Jul 2021

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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