We report on the first demonstration of metalorganic vapor phase epitaxy-regrown (MOVPE) ohmic contacts in an all MOVPE-grown β-Ga2O3 metal semiconductor field effect transistor (MESFET). The low-temperature (600 °C) heavy (n+) Si-doped regrown layers exhibit extremely high conductivity with a sheet resistance of 73 Ω/□ and a record low metal/n+-Ga2O3 contact resistance of 80 mΩ•mm and specific contact resistivity of 8.3 × 10-7 Ω•cm2 were achieved. The fabricated MESFETs exhibit a maximum ON current of 130 mA mm-1 and a high I ON/I OFF ratio of >1010. Thermal characterization was also performed to assess the device self-heating under the high current and power conditions.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)