15-nm channel length MoS2 FETs with single- and double-gate structures

A. Nourbakhsh, A. Zubair, Shengxi Huang, X. Ling, M. S. Dresselhaus, J. Kong, S. De Gendt, T. Palacios

Research output: Chapter in Book/Report/Conference proceedingConference contribution

17 Scopus citations

Abstract

We demonstrate single- and double-gated (SG & DG) field effect transistors (FETs) with a record source-drain length (LS/D) of 15 nm built on monolayer (tch∼0.7 nm) and 4-layer (tch∼3 nm) MoS2 channels using monolayer graphene as the Source/Drain contacts. The best devices, corresponding to DG 4-layer MoS2-FETs with LS/D=15 nm, had an Ion/Ioff in excess of 106 and a minimum subthreshold swing (SSmin.) of 90 mV/dec. at VDS=0.5 V. At LS/D=1 μm and VDS=0.5 V, SSmin.=66 mV/dec., which is the best SS reported in MoS2 FETs, indicating the high quality of the interface and the enhanced channel electrostatics.

Original languageEnglish (US)
Title of host publication2015 Symposium on VLSI Technology, VLSI Technology 2015 - Digest of Technical Papers
PublisherInstitute of Electrical and Electronics Engineers Inc.
PagesT28-T29
Volume2015-August
ISBN (Electronic)9784863485013
DOIs
StatePublished - Aug 25 2015
EventSymposium on VLSI Technology, VLSI Technology 2015 - Kyoto, Japan
Duration: Jun 16 2015Jun 18 2015

Other

OtherSymposium on VLSI Technology, VLSI Technology 2015
CountryJapan
CityKyoto
Period6/16/156/18/15

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All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Nourbakhsh, A., Zubair, A., Huang, S., Ling, X., Dresselhaus, M. S., Kong, J., De Gendt, S., & Palacios, T. (2015). 15-nm channel length MoS2 FETs with single- and double-gate structures. In 2015 Symposium on VLSI Technology, VLSI Technology 2015 - Digest of Technical Papers (Vol. 2015-August, pp. T28-T29). [7223690] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSIT.2015.7223690