193-nm lithography

Mordechai Rothschild, Anthony R. Forte, Mark William Horn, Roderick R. Kunz, Susan C. Palmateer, Jan H.C. Sedlacek

Research output: Contribution to journalConference article

3 Citations (Scopus)

Abstract

The trend in microelectronics toward printing features 0.25 micrometers and below has motivated the development of lithography at the 193-nm wavelength of argon fluoride excimer lasers. This technology is in its early stages, but a picture is emerging of its strengths and limitations. The change in wavelength from 248 to 193 nm will require parallel progress in projection systems, optical materials, and photoresist chemistries and processes. This paper reviews the current status of these various topics, as they have been engineered under a multi-year program at MIT Lincoln Laboratory.

Original languageEnglish (US)
Pages (from-to)398-404
Number of pages7
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume2703
DOIs
StatePublished - Dec 1 1996
EventLasers as Tools for Manufacturing of Durable Goods and Microelectronics - San Jose, CA, United States
Duration: Jan 29 1996Jan 29 1996

Fingerprint

Lithography
lithography
Wavelength
Projection systems
Excimer Laser
Optical Materials
Optical materials
Photoresist
Excimer lasers
optical materials
Photoresists
photoresists
microelectronics
Microelectronics
wavelengths
printing
excimer lasers
Chemistry
fluorides
Printing

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Rothschild, M., Forte, A. R., Horn, M. W., Kunz, R. R., Palmateer, S. C., & Sedlacek, J. H. C. (1996). 193-nm lithography. Proceedings of SPIE - The International Society for Optical Engineering, 2703, 398-404. https://doi.org/10.1117/12.237751
Rothschild, Mordechai ; Forte, Anthony R. ; Horn, Mark William ; Kunz, Roderick R. ; Palmateer, Susan C. ; Sedlacek, Jan H.C. / 193-nm lithography. In: Proceedings of SPIE - The International Society for Optical Engineering. 1996 ; Vol. 2703. pp. 398-404.
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Rothschild, M, Forte, AR, Horn, MW, Kunz, RR, Palmateer, SC & Sedlacek, JHC 1996, '193-nm lithography', Proceedings of SPIE - The International Society for Optical Engineering, vol. 2703, pp. 398-404. https://doi.org/10.1117/12.237751

193-nm lithography. / Rothschild, Mordechai; Forte, Anthony R.; Horn, Mark William; Kunz, Roderick R.; Palmateer, Susan C.; Sedlacek, Jan H.C.

In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 2703, 01.12.1996, p. 398-404.

Research output: Contribution to journalConference article

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AU - Rothschild, Mordechai

AU - Forte, Anthony R.

AU - Horn, Mark William

AU - Kunz, Roderick R.

AU - Palmateer, Susan C.

AU - Sedlacek, Jan H.C.

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Rothschild M, Forte AR, Horn MW, Kunz RR, Palmateer SC, Sedlacek JHC. 193-nm lithography. Proceedings of SPIE - The International Society for Optical Engineering. 1996 Dec 1;2703:398-404. https://doi.org/10.1117/12.237751