193-nm Lithography

Mordechai Rothschild, Anthony R. Forte, Mark W. Horn, Roderick R. Kunz, Susan C. Palmateer, Jan H.C. Sedlacek

Research output: Contribution to journalArticle

10 Scopus citations

Abstract

The trend in microelectronics toward printing features 0.25 μm and below has motivated the development of lithography at the 193-nm wavelength of argon fluoride excimer lasers. This technology is in its early stages, but a picture is emerging of its strengths and limitations. The change in wavelength from 248 to 193 nm will require parallel progress in projection systems, optical materials, and photo-resist chemistries and processes. This paper reviews the current status of these various topics as they have been engineered under a multiyear program at MIT Lincoln Laboratory.

Original languageEnglish (US)
Pages (from-to)916-923
Number of pages8
JournalIEEE Journal of Selected Topics in Quantum Electronics
Volume1
Issue number3
DOIs
StatePublished - Sep 1995

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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    Rothschild, M., Forte, A. R., Horn, M. W., Kunz, R. R., Palmateer, S. C., & Sedlacek, J. H. C. (1995). 193-nm Lithography. IEEE Journal of Selected Topics in Quantum Electronics, 1(3), 916-923. https://doi.org/10.1109/2944.473679