193 nm resists and lithography

Roderick R. Kunz, Robert D. Allen, Mark A. Hartney, William D. Hinsberg, Mark W. Horn, Craig L. Keast, Mordechai Rothschild, David C. Shaver, Gregory M. Wallraff

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Abstract

A review of recent efforts to develop photoresist materials and processes for 193 nm (ArF excimer laser) photolithography is reported. Three categories of resist processes are discussed: (1) conventional single layer, (2) bilayer and (3) surface‐imaged resist processes. To date, materials have been developed for each process which exhibit resolution to less than 0.25 μm with sensitivities of less than 50 mJ/cm2.

Original languageEnglish (US)
Pages (from-to)12-21
Number of pages10
JournalPolymers for Advanced Technologies
Volume5
Issue number1
DOIs
StatePublished - Jan 1994

All Science Journal Classification (ASJC) codes

  • Polymers and Plastics

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    Kunz, R. R., Allen, R. D., Hartney, M. A., Hinsberg, W. D., Horn, M. W., Keast, C. L., Rothschild, M., Shaver, D. C., & Wallraff, G. M. (1994). 193 nm resists and lithography. Polymers for Advanced Technologies, 5(1), 12-21. https://doi.org/10.1002/pat.1994.220050103