1/f noise behavior in pentacene organic thin film transistors

P. V. Necliudov, D. J. Gundlach, Thomas Nelson Jackson, S. L. Rumyantsev, M. S. Shur

Research output: Contribution to journalConference article

Abstract

We studied the low frequency noise in top-contact pentacene Thin Film Transistors (TFTs). The relative spectral noise density of the drain current fluctuations S1/I2 had a form of 1/f noise in the measured frequency range 1 Hz-3.5 kHz. Our studies of the noise dependencies on the gate-source VGS and drain-source VDS voltages showed that the dependencies differed from those observed for conducting polymers and resembled those reported for crystalline Si n-MOSFETs. To compare the device noise level with those of other devices and materials, we extracted the Hooge parameter α. In order to calculate the total number of carriers we used a model simulating the device DC characteristics, similar to that for amorphous Si TFTs. The extracted Hooge parameter was 0.04. For an organic material this is an extremely small value, which is three orders of magnitude smaller that the Hooge parameter values reported for conducting polymers and only several times higher than the values for amorphous Si TFTs.

Original languageEnglish (US)
JournalMaterials Research Society Symposium - Proceedings
Volume598
StatePublished - Dec 1 2000
EventElectrical, Optical, and Magnetic Properties of Organic Solid-State Materials V - Boston, MA, USA
Duration: Nov 29 2000Dec 3 2000

Fingerprint

Thin film transistors
transistors
Conducting polymers
conducting polymers
thin films
Drain current
organic materials
white noise
Crystalline materials
field effect transistors
frequency ranges
direct current
Electric potential
low frequencies
pentacene
electric potential

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Necliudov, P. V., Gundlach, D. J., Jackson, T. N., Rumyantsev, S. L., & Shur, M. S. (2000). 1/f noise behavior in pentacene organic thin film transistors. Materials Research Society Symposium - Proceedings, 598.
Necliudov, P. V. ; Gundlach, D. J. ; Jackson, Thomas Nelson ; Rumyantsev, S. L. ; Shur, M. S. / 1/f noise behavior in pentacene organic thin film transistors. In: Materials Research Society Symposium - Proceedings. 2000 ; Vol. 598.
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1/f noise behavior in pentacene organic thin film transistors. / Necliudov, P. V.; Gundlach, D. J.; Jackson, Thomas Nelson; Rumyantsev, S. L.; Shur, M. S.

In: Materials Research Society Symposium - Proceedings, Vol. 598, 01.12.2000.

Research output: Contribution to journalConference article

TY - JOUR

T1 - 1/f noise behavior in pentacene organic thin film transistors

AU - Necliudov, P. V.

AU - Gundlach, D. J.

AU - Jackson, Thomas Nelson

AU - Rumyantsev, S. L.

AU - Shur, M. S.

PY - 2000/12/1

Y1 - 2000/12/1

N2 - We studied the low frequency noise in top-contact pentacene Thin Film Transistors (TFTs). The relative spectral noise density of the drain current fluctuations S1/I2 had a form of 1/f noise in the measured frequency range 1 Hz-3.5 kHz. Our studies of the noise dependencies on the gate-source VGS and drain-source VDS voltages showed that the dependencies differed from those observed for conducting polymers and resembled those reported for crystalline Si n-MOSFETs. To compare the device noise level with those of other devices and materials, we extracted the Hooge parameter α. In order to calculate the total number of carriers we used a model simulating the device DC characteristics, similar to that for amorphous Si TFTs. The extracted Hooge parameter was 0.04. For an organic material this is an extremely small value, which is three orders of magnitude smaller that the Hooge parameter values reported for conducting polymers and only several times higher than the values for amorphous Si TFTs.

AB - We studied the low frequency noise in top-contact pentacene Thin Film Transistors (TFTs). The relative spectral noise density of the drain current fluctuations S1/I2 had a form of 1/f noise in the measured frequency range 1 Hz-3.5 kHz. Our studies of the noise dependencies on the gate-source VGS and drain-source VDS voltages showed that the dependencies differed from those observed for conducting polymers and resembled those reported for crystalline Si n-MOSFETs. To compare the device noise level with those of other devices and materials, we extracted the Hooge parameter α. In order to calculate the total number of carriers we used a model simulating the device DC characteristics, similar to that for amorphous Si TFTs. The extracted Hooge parameter was 0.04. For an organic material this is an extremely small value, which is three orders of magnitude smaller that the Hooge parameter values reported for conducting polymers and only several times higher than the values for amorphous Si TFTs.

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M3 - Conference article

VL - 598

JO - Materials Research Society Symposium - Proceedings

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