2-Transistor schmitt trigger based on 2D electrostrictive field effect transistors

Niharika Thakuria, Daniel Schulmarr, Saptarshi Das, Sumeet Kumar Gupta

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The 2D Electrostrictive FET (2D EFET) is a steep switching device that operates on the principle of dynamic bandgap (Eo) modulation of 2D channel enabled by voltage induced strain transduction [1]. However, the steep switching comes with its own overheads such as increased capacitance. Further, 2D-EFETs offer distinct features, such as a back terminal with unique control of device characteristics. To overcome the limitations of 2D EFETs, their unique behavior needs to be judiciously capitalized. In this work, we propose a 2-Transistor Schmitt Trigger (ST) based on 2D-EFETs utilizing the dynamic EG reduction and the resultant drive strength modulation driven by VB. (Fig. 1). We show the significance of circuit-driven device optimization to enable 2D-EFET based ST employing just two transistors.

Original languageEnglish (US)
Title of host publication2018 76th Device Research Conference, DRC 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781538630280
DOIs
StatePublished - Aug 20 2018
Event76th Device Research Conference, DRC 2018 - Santa Barbara, United States
Duration: Jun 24 2018Jun 27 2018

Publication series

NameDevice Research Conference - Conference Digest, DRC
Volume2018-June
ISSN (Print)1548-3770

Other

Other76th Device Research Conference, DRC 2018
CountryUnited States
CitySanta Barbara
Period6/24/186/27/18

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All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Thakuria, N., Schulmarr, D., Das, S., & Gupta, S. K. (2018). 2-Transistor schmitt trigger based on 2D electrostrictive field effect transistors. In 2018 76th Device Research Conference, DRC 2018 [8442149] (Device Research Conference - Conference Digest, DRC; Vol. 2018-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DRC.2018.8442149