2-Transistor schmitt trigger based on 2D electrostrictive field effect transistors

Niharika Thakuria, Daniel Schulmarr, Saptarshi Das, Sumeet Kumar Gupta

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The 2D Electrostrictive FET (2D EFET) is a steep switching device that operates on the principle of dynamic bandgap (Eo) modulation of 2D channel enabled by voltage induced strain transduction [1]. However, the steep switching comes with its own overheads such as increased capacitance. Further, 2D-EFETs offer distinct features, such as a back terminal with unique control of device characteristics. To overcome the limitations of 2D EFETs, their unique behavior needs to be judiciously capitalized. In this work, we propose a 2-Transistor Schmitt Trigger (ST) based on 2D-EFETs utilizing the dynamic EG reduction and the resultant drive strength modulation driven by VB. (Fig. 1). We show the significance of circuit-driven device optimization to enable 2D-EFET based ST employing just two transistors.

Original languageEnglish (US)
Title of host publication2018 76th Device Research Conference, DRC 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Volume2018-June
ISBN (Print)9781538630280
DOIs
StatePublished - Aug 20 2018
Event76th Device Research Conference, DRC 2018 - Santa Barbara, United States
Duration: Jun 24 2018Jun 27 2018

Other

Other76th Device Research Conference, DRC 2018
CountryUnited States
CitySanta Barbara
Period6/24/186/27/18

Fingerprint

Field effect transistors
Transistors
Modulation
Energy gap
Capacitance
Networks (circuits)
Electric potential

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Thakuria, N., Schulmarr, D., Das, S., & Gupta, S. K. (2018). 2-Transistor schmitt trigger based on 2D electrostrictive field effect transistors. In 2018 76th Device Research Conference, DRC 2018 (Vol. 2018-June). [8442149] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DRC.2018.8442149
Thakuria, Niharika ; Schulmarr, Daniel ; Das, Saptarshi ; Gupta, Sumeet Kumar. / 2-Transistor schmitt trigger based on 2D electrostrictive field effect transistors. 2018 76th Device Research Conference, DRC 2018. Vol. 2018-June Institute of Electrical and Electronics Engineers Inc., 2018.
@inproceedings{9c6ebfa1637c445191638f6c27ae859d,
title = "2-Transistor schmitt trigger based on 2D electrostrictive field effect transistors",
abstract = "The 2D Electrostrictive FET (2D EFET) is a steep switching device that operates on the principle of dynamic bandgap (Eo) modulation of 2D channel enabled by voltage induced strain transduction [1]. However, the steep switching comes with its own overheads such as increased capacitance. Further, 2D-EFETs offer distinct features, such as a back terminal with unique control of device characteristics. To overcome the limitations of 2D EFETs, their unique behavior needs to be judiciously capitalized. In this work, we propose a 2-Transistor Schmitt Trigger (ST) based on 2D-EFETs utilizing the dynamic EG reduction and the resultant drive strength modulation driven by VB. (Fig. 1). We show the significance of circuit-driven device optimization to enable 2D-EFET based ST employing just two transistors.",
author = "Niharika Thakuria and Daniel Schulmarr and Saptarshi Das and Gupta, {Sumeet Kumar}",
year = "2018",
month = "8",
day = "20",
doi = "10.1109/DRC.2018.8442149",
language = "English (US)",
isbn = "9781538630280",
volume = "2018-June",
booktitle = "2018 76th Device Research Conference, DRC 2018",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
address = "United States",

}

Thakuria, N, Schulmarr, D, Das, S & Gupta, SK 2018, 2-Transistor schmitt trigger based on 2D electrostrictive field effect transistors. in 2018 76th Device Research Conference, DRC 2018. vol. 2018-June, 8442149, Institute of Electrical and Electronics Engineers Inc., 76th Device Research Conference, DRC 2018, Santa Barbara, United States, 6/24/18. https://doi.org/10.1109/DRC.2018.8442149

2-Transistor schmitt trigger based on 2D electrostrictive field effect transistors. / Thakuria, Niharika; Schulmarr, Daniel; Das, Saptarshi; Gupta, Sumeet Kumar.

2018 76th Device Research Conference, DRC 2018. Vol. 2018-June Institute of Electrical and Electronics Engineers Inc., 2018. 8442149.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - 2-Transistor schmitt trigger based on 2D electrostrictive field effect transistors

AU - Thakuria, Niharika

AU - Schulmarr, Daniel

AU - Das, Saptarshi

AU - Gupta, Sumeet Kumar

PY - 2018/8/20

Y1 - 2018/8/20

N2 - The 2D Electrostrictive FET (2D EFET) is a steep switching device that operates on the principle of dynamic bandgap (Eo) modulation of 2D channel enabled by voltage induced strain transduction [1]. However, the steep switching comes with its own overheads such as increased capacitance. Further, 2D-EFETs offer distinct features, such as a back terminal with unique control of device characteristics. To overcome the limitations of 2D EFETs, their unique behavior needs to be judiciously capitalized. In this work, we propose a 2-Transistor Schmitt Trigger (ST) based on 2D-EFETs utilizing the dynamic EG reduction and the resultant drive strength modulation driven by VB. (Fig. 1). We show the significance of circuit-driven device optimization to enable 2D-EFET based ST employing just two transistors.

AB - The 2D Electrostrictive FET (2D EFET) is a steep switching device that operates on the principle of dynamic bandgap (Eo) modulation of 2D channel enabled by voltage induced strain transduction [1]. However, the steep switching comes with its own overheads such as increased capacitance. Further, 2D-EFETs offer distinct features, such as a back terminal with unique control of device characteristics. To overcome the limitations of 2D EFETs, their unique behavior needs to be judiciously capitalized. In this work, we propose a 2-Transistor Schmitt Trigger (ST) based on 2D-EFETs utilizing the dynamic EG reduction and the resultant drive strength modulation driven by VB. (Fig. 1). We show the significance of circuit-driven device optimization to enable 2D-EFET based ST employing just two transistors.

UR - http://www.scopus.com/inward/record.url?scp=85053216241&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85053216241&partnerID=8YFLogxK

U2 - 10.1109/DRC.2018.8442149

DO - 10.1109/DRC.2018.8442149

M3 - Conference contribution

AN - SCOPUS:85053216241

SN - 9781538630280

VL - 2018-June

BT - 2018 76th Device Research Conference, DRC 2018

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

Thakuria N, Schulmarr D, Das S, Gupta SK. 2-Transistor schmitt trigger based on 2D electrostrictive field effect transistors. In 2018 76th Device Research Conference, DRC 2018. Vol. 2018-June. Institute of Electrical and Electronics Engineers Inc. 2018. 8442149 https://doi.org/10.1109/DRC.2018.8442149