The 2D Electrostrictive FET (2D EFET) is a steep switching device that operates on the principle of dynamic bandgap (Eo) modulation of 2D channel enabled by voltage induced strain transduction . However, the steep switching comes with its own overheads such as increased capacitance. Further, 2D-EFETs offer distinct features, such as a back terminal with unique control of device characteristics. To overcome the limitations of 2D EFETs, their unique behavior needs to be judiciously capitalized. In this work, we propose a 2-Transistor Schmitt Trigger (ST) based on 2D-EFETs utilizing the dynamic EG reduction and the resultant drive strength modulation driven by VB. (Fig. 1). We show the significance of circuit-driven device optimization to enable 2D-EFET based ST employing just two transistors.