200-keV He+-ion irradiation effects on the properties of pulsed-laser-deposited YBa2Cu3O7-x thin films

S. Vadlamannati, P. England, N. G. Stoffel, A. Findikoglu, Qi Li, T. Venkatesan, W. L. McLean

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Abstract

We report the effects of 200-keV He+-ion irradiation on the properties of high-quality YBa2Cu3O7-x thin films made in situ by pulsed-laser deposition. There is no significant change in Tc or the normal-state resistivity for fluences up to 1×1014 He+/cm2. There is only a small increase in the critical current density Jc measured at 60 K for fluences up to 3×1013 He+/cm2 and in nonzero magnetic fields. At fluences above 1×1014 He+/cm2, the induced changes are more rapid and have a deleterious effect on the superconducting properties.

Original languageEnglish (US)
Pages (from-to)5290-5295
Number of pages6
JournalPhysical Review B
Volume43
Issue number7
DOIs
StatePublished - Jan 1 1991

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

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    Vadlamannati, S., England, P., Stoffel, N. G., Findikoglu, A., Li, Q., Venkatesan, T., & McLean, W. L. (1991). 200-keV He+-ion irradiation effects on the properties of pulsed-laser-deposited YBa2Cu3O7-x thin films. Physical Review B, 43(7), 5290-5295. https://doi.org/10.1103/PhysRevB.43.5290