Abstract
Scaling of the conventional planar complementary metal oxide semiconductor (CMOS) faces many challenges. Top-down fabricated gate-all-around Si nanowire FinFETs, which are compatible with the CMOS processes, offer an opportunity to circumvent these limitations to boost the device scalability and performance. Beyond applications in CMOS technology, the thus fabricated Si nanowire arrays can be explored as biosensors, providing a possible route to multiplexed label-free electronic chips for molecular diagnostics.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 6-9 |
| Number of pages | 4 |
| Journal | ACS nano |
| Volume | 1 |
| Issue number | 1 |
| DOIs | |
| State | Published - Aug 1 2007 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Engineering(all)
- Physics and Astronomy(all)
Cite this
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2007 IEEE device research conference : Tour de force multigate and nanowire metal oxide semiconductor field-effect transistors and their application. / Zhang, Pengpeng; Mayer, Theresa S.; Jackson, Thomas Nelson.
In: ACS nano, Vol. 1, No. 1, 01.08.2007, p. 6-9.Research output: Contribution to journal › Article
TY - JOUR
T1 - 2007 IEEE device research conference
T2 - Tour de force multigate and nanowire metal oxide semiconductor field-effect transistors and their application
AU - Zhang, Pengpeng
AU - Mayer, Theresa S.
AU - Jackson, Thomas Nelson
PY - 2007/8/1
Y1 - 2007/8/1
N2 - Scaling of the conventional planar complementary metal oxide semiconductor (CMOS) faces many challenges. Top-down fabricated gate-all-around Si nanowire FinFETs, which are compatible with the CMOS processes, offer an opportunity to circumvent these limitations to boost the device scalability and performance. Beyond applications in CMOS technology, the thus fabricated Si nanowire arrays can be explored as biosensors, providing a possible route to multiplexed label-free electronic chips for molecular diagnostics.
AB - Scaling of the conventional planar complementary metal oxide semiconductor (CMOS) faces many challenges. Top-down fabricated gate-all-around Si nanowire FinFETs, which are compatible with the CMOS processes, offer an opportunity to circumvent these limitations to boost the device scalability and performance. Beyond applications in CMOS technology, the thus fabricated Si nanowire arrays can be explored as biosensors, providing a possible route to multiplexed label-free electronic chips for molecular diagnostics.
UR - http://www.scopus.com/inward/record.url?scp=63449086454&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=63449086454&partnerID=8YFLogxK
U2 - 10.1021/nn7001344
DO - 10.1021/nn7001344
M3 - Article
C2 - 19203124
AN - SCOPUS:63449086454
VL - 1
SP - 6
EP - 9
JO - ACS Nano
JF - ACS Nano
SN - 1936-0851
IS - 1
ER -