2007 IEEE device research conference: Tour de force multigate and nanowire metal oxide semiconductor field-effect transistors and their application

Pengpeng Zhang; Theresa S. Mayer; Thomas Nelson Jackson

doi:10.1021/nn7001344

2007 IEEE device research conference: Tour de force multigate and nanowire metal oxide semiconductor field-effect transistors and their application

Pengpeng Zhang, Theresa S. Mayer, Thomas Nelson Jackson

Materials Research Institute (MRI)

Research output: Contribution to journal › Article

10 Scopus citations

Abstract

Scaling of the conventional planar complementary metal oxide semiconductor (CMOS) faces many challenges. Top-down fabricated gate-all-around Si nanowire FinFETs, which are compatible with the CMOS processes, offer an opportunity to circumvent these limitations to boost the device scalability and performance. Beyond applications in CMOS technology, the thus fabricated Si nanowire arrays can be explored as biosensors, providing a possible route to multiplexed label-free electronic chips for molecular diagnostics.

Original language	English (US)
Pages (from-to)	6-9
Number of pages	4
Journal	ACS nano
Volume	1
Issue number	1
DOIs	https://doi.org/10.1021/nn7001344
State	Published - Aug 1 2007

All Science Journal Classification (ASJC) codes

Materials Science(all)
Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1021/nn7001344

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Zhang, P., Mayer, T. S., & Jackson, T. N. (2007). 2007 IEEE device research conference: Tour de force multigate and nanowire metal oxide semiconductor field-effect transistors and their application. ACS nano, 1(1), 6-9. https://doi.org/10.1021/nn7001344

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