Scaling of the conventional planar complementary metal oxide semiconductor (CMOS) faces many challenges. Top-down fabricated gate-all-around Si nanowire FinFETs, which are compatible with the CMOS processes, offer an opportunity to circumvent these limitations to boost the device scalability and performance. Beyond applications in CMOS technology, the thus fabricated Si nanowire arrays can be explored as biosensors, providing a possible route to multiplexed label-free electronic chips for molecular diagnostics.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Physics and Astronomy(all)