26.5 Terahertz electrically triggered RF switch on epitaxial VO2-on-Sapphire (VOS) wafer

H. Madan, H. T. Zhang, M. Jerry, D. Mukherjee, Nasim Alem, Roman Engel-Herbert, S. Datta

Research output: Chapter in Book/Report/Conference proceedingConference contribution

12 Citations (Scopus)

Abstract

An electrically triggered VO2 RF switch with a record switching cut off frequency (FCO) of 26.5THz was demonstrated. The switch exhibits an isolation better than 35dB and a low 0.5dB insertion loss up-to 50GHz. The switch features a highly linear response with 1-dB compression point (P1dB) better than 12dBm and output third-order intercept point (OIP3) better than 44dBm. The fast insulator to metal-transition (IMT) of the VO2 enables the switch to have an electrical-turn on delay of less than 25ns.

Original languageEnglish (US)
Title of host publication2015 IEEE International Electron Devices Meeting, IEDM 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages9.3.1-9.3.4
Volume2016-February
ISBN (Electronic)9781467398930
DOIs
StatePublished - Feb 16 2016
Event61st IEEE International Electron Devices Meeting, IEDM 2015 - Washington, United States
Duration: Dec 7 2015Dec 9 2015

Other

Other61st IEEE International Electron Devices Meeting, IEDM 2015
CountryUnited States
CityWashington
Period12/7/1512/9/15

Fingerprint

Aluminum Oxide
Sapphire
sapphire
switches
Switches
wafers
Cutoff frequency
Insertion losses
insertion loss
Transition metals
isolation
cut-off
transition metals
insulators
output

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this

Madan, H., Zhang, H. T., Jerry, M., Mukherjee, D., Alem, N., Engel-Herbert, R., & Datta, S. (2016). 26.5 Terahertz electrically triggered RF switch on epitaxial VO2-on-Sapphire (VOS) wafer. In 2015 IEEE International Electron Devices Meeting, IEDM 2015 (Vol. 2016-February, pp. 9.3.1-9.3.4). [7409661] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2015.7409661
Madan, H. ; Zhang, H. T. ; Jerry, M. ; Mukherjee, D. ; Alem, Nasim ; Engel-Herbert, Roman ; Datta, S. / 26.5 Terahertz electrically triggered RF switch on epitaxial VO2-on-Sapphire (VOS) wafer. 2015 IEEE International Electron Devices Meeting, IEDM 2015. Vol. 2016-February Institute of Electrical and Electronics Engineers Inc., 2016. pp. 9.3.1-9.3.4
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abstract = "An electrically triggered VO2 RF switch with a record switching cut off frequency (FCO) of 26.5THz was demonstrated. The switch exhibits an isolation better than 35dB and a low 0.5dB insertion loss up-to 50GHz. The switch features a highly linear response with 1-dB compression point (P1dB) better than 12dBm and output third-order intercept point (OIP3) better than 44dBm. The fast insulator to metal-transition (IMT) of the VO2 enables the switch to have an electrical-turn on delay of less than 25ns.",
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Madan, H, Zhang, HT, Jerry, M, Mukherjee, D, Alem, N, Engel-Herbert, R & Datta, S 2016, 26.5 Terahertz electrically triggered RF switch on epitaxial VO2-on-Sapphire (VOS) wafer. in 2015 IEEE International Electron Devices Meeting, IEDM 2015. vol. 2016-February, 7409661, Institute of Electrical and Electronics Engineers Inc., pp. 9.3.1-9.3.4, 61st IEEE International Electron Devices Meeting, IEDM 2015, Washington, United States, 12/7/15. https://doi.org/10.1109/IEDM.2015.7409661

26.5 Terahertz electrically triggered RF switch on epitaxial VO2-on-Sapphire (VOS) wafer. / Madan, H.; Zhang, H. T.; Jerry, M.; Mukherjee, D.; Alem, Nasim; Engel-Herbert, Roman; Datta, S.

2015 IEEE International Electron Devices Meeting, IEDM 2015. Vol. 2016-February Institute of Electrical and Electronics Engineers Inc., 2016. p. 9.3.1-9.3.4 7409661.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AB - An electrically triggered VO2 RF switch with a record switching cut off frequency (FCO) of 26.5THz was demonstrated. The switch exhibits an isolation better than 35dB and a low 0.5dB insertion loss up-to 50GHz. The switch features a highly linear response with 1-dB compression point (P1dB) better than 12dBm and output third-order intercept point (OIP3) better than 44dBm. The fast insulator to metal-transition (IMT) of the VO2 enables the switch to have an electrical-turn on delay of less than 25ns.

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Madan H, Zhang HT, Jerry M, Mukherjee D, Alem N, Engel-Herbert R et al. 26.5 Terahertz electrically triggered RF switch on epitaxial VO2-on-Sapphire (VOS) wafer. In 2015 IEEE International Electron Devices Meeting, IEDM 2015. Vol. 2016-February. Institute of Electrical and Electronics Engineers Inc. 2016. p. 9.3.1-9.3.4. 7409661 https://doi.org/10.1109/IEDM.2015.7409661