2D Boron Nitride: Synthesis and Applications

G. R. Bhimanapati, N. R. Glavin, Joshua Alexander Robinson

Research output: Chapter in Book/Report/Conference proceedingChapter

29 Scopus citations

Abstract

Hexagonal boron nitride (h-BN), a layered material isostructural to graphite, has similar exotic properties like graphite. With single atom thick and alternating boron and nitrogen atoms in its atomic structure, h-BN is an insulator with band gap ~ 5.9 eV. As monolayer h-BN or boron nitride nanosheet (BNNS) has been studied for over a decade, a brief overview about the structure and stability is provided. In addition, this chapter provides insight into the different forms of h-BN focusing mainly on the synthesis of single layer h-BN or BNNS via different techniques such as mechanical exfoliation, solvent exfoliation, and chemical vapor deposition. Along with BNNS, h-BN nanoribbon synthesis is also presented as it follows a similar approach to BNNS. As h-BN is the insulating isostructure to graphene, use of h-BN in some of the major applications such as coatings, dielectric, and some device applications are also discussed.

Original languageEnglish (US)
Title of host publicationSemiconductors and Semimetals
PublisherAcademic Press Inc.
Pages101-147
Number of pages47
DOIs
StatePublished - Jan 1 2016

Publication series

NameSemiconductors and Semimetals
Volume95
ISSN (Print)0080-8784

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry

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