2D Materials for Universal Thermal Imaging of Micro- and Nanodevices: An Application to Gallium Oxide Electronics

James Spencer Lundh, Tianyi Zhang, Yuewei Zhang, Zhanbo Xia, Maxwell Wetherington, Yu Lei, Ethan Kahn, Siddharth Rajan, Mauricio Terrones, Sukwon Choi

Research output: Contribution to journalArticlepeer-review

Abstract

We highlight the flexibility of two-dimensional (2D) materials for advancing current technologies through the introduction of 2D Raman thermography (2DRT). 2DRT combines monolayer materials and Raman spectroscopy to perform thermal imaging of micro- and nanodevices. In contrast to peak shift and line width based methods for Raman thermal analysis, 2DRT uses the anti-Stokes/Stokes intensity ratio which is only sensitive to temperature. To demonstrate the technique, monolayer molybdenum disulfide (MoS2) was transferred to the surface of devices based on β-gallium oxide (Ga2O3), an emerging ultrawide-bandgap semiconductor for high-frequency and high-power applications. The validation of the technique was performed on an (AlGa)2O3/Ga2O3 modulation-doped field effect transistor by using nanoparticle-assisted Raman thermometry. The peak operating temperature, a critical device performance metric, is underestimated by ∼30% by using standard Raman thermometry when compared to 2DRT. Finally, the 2D thermal imaging capabilities of 2DRT were demonstrated on an (AlGa)2O3/Ga2O3 transmission line measurement structure.

Original languageEnglish (US)
Pages (from-to)2945-2953
Number of pages9
JournalACS Applied Electronic Materials
Volume2
Issue number9
DOIs
StatePublished - Sep 22 2020

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Electrochemistry

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