3C-SIC films grown on Si(111) substrates as a template for graphene epitaxy

M. A. Fanton, J. A. Robinson, B. E. Weiland, J. Moon

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Scopus citations

Abstract

High quality (111) oriented SiC films were grown Si(111 substrates using a low temperature halogen-based process. The goal of this work was to produce SiC films with a high crystal quality and very low surface roughness for subsequent epitaxial growth of graphene films. SiC films with narrow x-ray diffraction peak widths and surface roughnesses less than 1nm were grown while avoiding common processing defects such as voids at the substrate-film interface.

Original languageEnglish (US)
Title of host publicationECS Transactions - Graphene and Emerging Materials for Post-CMOS Applications
Pages131-135
Number of pages5
Edition5
DOIs
StatePublished - Dec 1 2009
Event1st International Symposium on Emerging Materials for Post-CMOS Applications - 215th Meeting of the Electrochemical Society - San Francisco, CA, United States
Duration: May 25 2009May 29 2009

Publication series

NameECS Transactions
Number5
Volume19
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other1st International Symposium on Emerging Materials for Post-CMOS Applications - 215th Meeting of the Electrochemical Society
CountryUnited States
CitySan Francisco, CA
Period5/25/095/29/09

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All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Fanton, M. A., Robinson, J. A., Weiland, B. E., & Moon, J. (2009). 3C-SIC films grown on Si(111) substrates as a template for graphene epitaxy. In ECS Transactions - Graphene and Emerging Materials for Post-CMOS Applications (5 ed., pp. 131-135). (ECS Transactions; Vol. 19, No. 5). https://doi.org/10.1149/1.3119537