600 V/1.7 - Normally-off gan vertical trench metal-oxide-semiconductor field-effect transistor

Ray Li, Yu Cao, Mary Chen, Rongming Chu

Research output: Contribution to journalArticlepeer-review

74 Scopus citations

Abstract

This letter reports a GaN vertical trench metal-oxide-semiconductor field-effect transistor (MOSFET) with normally-off operation. Selective area regrowth of n+- GaN source layer was performed to avoid plasma etch damage to the p-GaN body contact region. A metal-organic-chemicalvapor- deposition (MOCVD) grown AlN/SiN dielectric stack was employed as the gate "oxide". This unique process yielded a 0.5-mm2-active-area transistor with threshold voltage of 4.8 V, blocking voltage of 600 V at gate bias of 0 V, and on-resistance of 1.7 Ω at gate bias of 10 V.

Original languageEnglish (US)
Article number7586076
Pages (from-to)1466-1469
Number of pages4
JournalIEEE Electron Device Letters
Volume37
Issue number11
DOIs
StatePublished - Nov 2016

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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