61.1: Invited paper: ZnO thin film transistors and circuits on flexible polymeric substrates by low-temperature PEALD

Dalong A. Zhao, Devin A. Mourey, Ho Him R. Fok, Yuanyuan V. Li, Thomas Nelson Jackson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report using a novel, weak oxidant, plasma-enhanced atomic layer deposition (PEALD) process at 200°C to fabricate stable, high mobility ZnO thin film transistors (TFTs) and fast circuits on glass and polyimide substrates. Weak oxidant PEALD provides a simple, fast deposition process that results in uniform, conformal semiconductor and dielectric layers and enhancement-mode MOSFETs from uncompensated films. Highly conformal PEALD Al2O3layers provide a high yield dielectric on rough plastic substrates for both PEALD ZnO TFTs and cross-overs. Our PEALD ZnO TFTs have field-effect mobility of >20 cm2/V-s on polyimide substrates with excellent bias stress stability. TFTs biased continuously for 40,000s showed <50 mV threshold voltage shift. We also report fast PEALD ZnO circuits on polyimide substrates with propagation delay <20 ns/stage for V DD = 18 V.

Original languageEnglish (US)
Title of host publication48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010
Pages909-912
Number of pages4
Volume2
StatePublished - Dec 1 2010
Event48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010 - Seattle, WA, United States
Duration: May 23 2010May 28 2010

Other

Other48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010
CountryUnited States
CitySeattle, WA
Period5/23/105/28/10

Fingerprint

Thin film circuits
Atomic layer deposition
Thin film transistors
Plasmas
Substrates
Polyimides
Oxidants
Temperature
Networks (circuits)
Threshold voltage
Semiconductor materials
Plastics
Glass

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Information Systems

Cite this

Zhao, D. A., Mourey, D. A., Fok, H. H. R., Li, Y. V., & Jackson, T. N. (2010). 61.1: Invited paper: ZnO thin film transistors and circuits on flexible polymeric substrates by low-temperature PEALD. In 48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010 (Vol. 2, pp. 909-912)
Zhao, Dalong A. ; Mourey, Devin A. ; Fok, Ho Him R. ; Li, Yuanyuan V. ; Jackson, Thomas Nelson. / 61.1 : Invited paper: ZnO thin film transistors and circuits on flexible polymeric substrates by low-temperature PEALD. 48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010. Vol. 2 2010. pp. 909-912
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Zhao, DA, Mourey, DA, Fok, HHR, Li, YV & Jackson, TN 2010, 61.1: Invited paper: ZnO thin film transistors and circuits on flexible polymeric substrates by low-temperature PEALD. in 48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010. vol. 2, pp. 909-912, 48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010, Seattle, WA, United States, 5/23/10.

61.1 : Invited paper: ZnO thin film transistors and circuits on flexible polymeric substrates by low-temperature PEALD. / Zhao, Dalong A.; Mourey, Devin A.; Fok, Ho Him R.; Li, Yuanyuan V.; Jackson, Thomas Nelson.

48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010. Vol. 2 2010. p. 909-912.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Zhao DA, Mourey DA, Fok HHR, Li YV, Jackson TN. 61.1: Invited paper: ZnO thin film transistors and circuits on flexible polymeric substrates by low-temperature PEALD. In 48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010. Vol. 2. 2010. p. 909-912