61.1: Invited paper: ZnO thin film transistors and circuits on flexible polymeric substrates by low-temperature PEALD

Dalong A. Zhao, Devin A. Mourey, Ho Him R. Fok, Yuanyuan V. Li, Thomas Nelson Jackson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report using a novel, weak oxidant, plasma-enhanced atomic layer deposition (PEALD) process at 200°C to fabricate stable, high mobility ZnO thin film transistors (TFTs) and fast circuits on glass and polyimide substrates. Weak oxidant PEALD provides a simple, fast deposition process that results in uniform, conformal semiconductor and dielectric layers and enhancement-mode MOSFETs from uncompensated films. Highly conformal PEALD Al2O3layers provide a high yield dielectric on rough plastic substrates for both PEALD ZnO TFTs and cross-overs. Our PEALD ZnO TFTs have field-effect mobility of >20 cm2/V-s on polyimide substrates with excellent bias stress stability. TFTs biased continuously for 40,000s showed <50 mV threshold voltage shift. We also report fast PEALD ZnO circuits on polyimide substrates with propagation delay <20 ns/stage for V DD = 18 V.

Original languageEnglish (US)
Title of host publication48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010
Pages909-912
Number of pages4
Volume2
StatePublished - Dec 1 2010
Event48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010 - Seattle, WA, United States
Duration: May 23 2010May 28 2010

Other

Other48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010
CountryUnited States
CitySeattle, WA
Period5/23/105/28/10

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All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Information Systems

Cite this

Zhao, D. A., Mourey, D. A., Fok, H. H. R., Li, Y. V., & Jackson, T. N. (2010). 61.1: Invited paper: ZnO thin film transistors and circuits on flexible polymeric substrates by low-temperature PEALD. In 48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010 (Vol. 2, pp. 909-912)