A 1 Gb 2 GHz 128 GB/s bandwidth embedded DRAM in 22 nm tri-gate CMOS technology

Fatih Hamzaoglu, Umut Arslan, Nabhendra Bisnik, Swaroop Ghosh, Manoj B. Lal, Nick Lindert, Mesut Meterelliyoz, Randy B. Osborne, Joodong Park, Shigeki Tomishima, Yih Wang, Kevin Zhang

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

An embedded DRAM (eDRAM) integrated into 22 nm CMOS logic technology using tri-gate high-k metal gate transistor and MIM capacitor is described. A 1 Gb eDRAM die is designed, which includes fully integrated programmable charge pumps to over-and underdrive wordlines with output voltage regulation. The die area is 77 mm2 and provides 64 GB/s Read and 64 GB/s Write at 1.05 V. 100 μs retention time is achieved at 95°C using the worst case memory array stress patterns. The 1 Gb eDRAM die is multi-chip-packaged with Haswell family Iris Pro™ die to achieve a high-end graphics part, which provides up to 75% performance improvement in silicon, across a wide range of workloads.

Original languageEnglish (US)
Article number6912029
Pages (from-to)150-157
Number of pages8
JournalIEEE Journal of Solid-State Circuits
Volume50
Issue number1
DOIs
StatePublished - Jan 1 2015

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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