A 2.5-GHz InGaP/GaAs differential cross-coupled self-oscillating mixer (SOM) IC

Mohammad-reza Tofighi, Afshin S. Daryoush

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

This letter presents a monolithic differential cross-coupled self-oscillating mixer (SOM). The SOM chip is fabricated using an InGaP/GaAs heterojunction bipolar transistor (HBT) foundry process and operates at 2.5 GHz. The chip provides voltage controlled oscillator (VCO) operation, up- and down-conversion mixing, and injection locking functionalities. The voltage down-conversion gain and the power up-conversion gain of up to 15 and 11.5 dB, respectively, are measured for the circuit. There is a compromise between obtaining a high conversion gain, and the oscillator power (-0.3 dBm for a 5-V supply) and phase noise (-84 dBc/Hz at 100 kHz). However, phase noise improvement of 32 dB is observed by injection of a -30-dBm stable reference.

Original languageEnglish (US)
Pages (from-to)211-213
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Volume15
Issue number4
DOIs
StatePublished - Apr 1 2005

Fingerprint

Phase noise
Variable frequency oscillators
Heterojunction bipolar transistors
Foundries
chips
Networks (circuits)
Electric potential
injection locking
foundries
voltage controlled oscillators
bipolar transistors
heterojunctions
oscillators
injection
electric potential

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

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abstract = "This letter presents a monolithic differential cross-coupled self-oscillating mixer (SOM). The SOM chip is fabricated using an InGaP/GaAs heterojunction bipolar transistor (HBT) foundry process and operates at 2.5 GHz. The chip provides voltage controlled oscillator (VCO) operation, up- and down-conversion mixing, and injection locking functionalities. The voltage down-conversion gain and the power up-conversion gain of up to 15 and 11.5 dB, respectively, are measured for the circuit. There is a compromise between obtaining a high conversion gain, and the oscillator power (-0.3 dBm for a 5-V supply) and phase noise (-84 dBc/Hz at 100 kHz). However, phase noise improvement of 32 dB is observed by injection of a -30-dBm stable reference.",
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A 2.5-GHz InGaP/GaAs differential cross-coupled self-oscillating mixer (SOM) IC. / Tofighi, Mohammad-reza; Daryoush, Afshin S.

In: IEEE Microwave and Wireless Components Letters, Vol. 15, No. 4, 01.04.2005, p. 211-213.

Research output: Contribution to journalArticle

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