A 48nm 32Gb 8-level NAND Flash memory with 5.5MB/s program throughput

Seung Ho Chang, Sok Kyu Lee, Seong Je Park, Min Joong Jung, Jung Chul Han, In Soo Wang, Kyu Hee Lim, Jung Hwan Lee, Ji Hwan Kim, Won Kyung Kang, Tai Kyu Kang, Hee Su Byun, Yu Jong Noh, Lee Hyun Kwon, Bon Kwang Koo, Myung (Michael) Cho, Joong Seob Yang, Yo Hwan Koh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

13 Scopus citations
Original languageEnglish (US)
Title of host publication2009 IEEE International Solid-State Circuits Conference - Digest of Technical Papers, ISSCC 2009
DOIs
Publication statusPublished - Sep 25 2009
Event2009 IEEE International Solid-State Circuits Conference ISSCC 2009 - San Francisco, CA, United States
Duration: Feb 8 2009Feb 12 2009

Publication series

NameDigest of Technical Papers - IEEE International Solid-State Circuits Conference
ISSN (Print)0193-6530

Conference

Conference2009 IEEE International Solid-State Circuits Conference ISSCC 2009
CountryUnited States
CitySan Francisco, CA
Period2/8/092/12/09

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Chang, S. H., Lee, S. K., Park, S. J., Jung, M. J., Han, J. C., Wang, I. S., ... Koh, Y. H. (2009). A 48nm 32Gb 8-level NAND Flash memory with 5.5MB/s program throughput. In 2009 IEEE International Solid-State Circuits Conference - Digest of Technical Papers, ISSCC 2009 [4977397] (Digest of Technical Papers - IEEE International Solid-State Circuits Conference). https://doi.org/10.1109/ISSCC.2009.4977397