A 48nm 32Gb 8-level NAND Flash memory with 5.5MB/s program throughput

Seung Ho Chang, Sok Kyu Lee, Seong Je Park, Min Joong Jung, Jung Chul Han, In Soo Wang, Kyu Hee Lim, Jung Hwan Lee, Ji Hwan Kim, Won Kyung Kang, Tai Kyu Kang, Hee Su Byun, Yu Jong Noh, Lee Hyun Kwon, Bon Kwang Koo, Myung (Michael) Cho, Joong Seob Yang, Yo Hwan Koh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

13 Citations (Scopus)
Original languageEnglish (US)
Title of host publication2009 IEEE International Solid-State Circuits Conference - Digest of Technical Papers, ISSCC 2009
DOIs
StatePublished - Sep 25 2009
Event2009 IEEE International Solid-State Circuits Conference ISSCC 2009 - San Francisco, CA, United States
Duration: Feb 8 2009Feb 12 2009

Publication series

NameDigest of Technical Papers - IEEE International Solid-State Circuits Conference
ISSN (Print)0193-6530

Conference

Conference2009 IEEE International Solid-State Circuits Conference ISSCC 2009
CountryUnited States
CitySan Francisco, CA
Period2/8/092/12/09

Fingerprint

Flash memory
Throughput

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Chang, S. H., Lee, S. K., Park, S. J., Jung, M. J., Han, J. C., Wang, I. S., ... Koh, Y. H. (2009). A 48nm 32Gb 8-level NAND Flash memory with 5.5MB/s program throughput. In 2009 IEEE International Solid-State Circuits Conference - Digest of Technical Papers, ISSCC 2009 [4977397] (Digest of Technical Papers - IEEE International Solid-State Circuits Conference). https://doi.org/10.1109/ISSCC.2009.4977397
Chang, Seung Ho ; Lee, Sok Kyu ; Park, Seong Je ; Jung, Min Joong ; Han, Jung Chul ; Wang, In Soo ; Lim, Kyu Hee ; Lee, Jung Hwan ; Kim, Ji Hwan ; Kang, Won Kyung ; Kang, Tai Kyu ; Byun, Hee Su ; Noh, Yu Jong ; Kwon, Lee Hyun ; Koo, Bon Kwang ; Cho, Myung (Michael) ; Yang, Joong Seob ; Koh, Yo Hwan. / A 48nm 32Gb 8-level NAND Flash memory with 5.5MB/s program throughput. 2009 IEEE International Solid-State Circuits Conference - Digest of Technical Papers, ISSCC 2009. 2009. (Digest of Technical Papers - IEEE International Solid-State Circuits Conference).
@inproceedings{347759c0863a48048e1ef816da2ec563,
title = "A 48nm 32Gb 8-level NAND Flash memory with 5.5MB/s program throughput",
author = "Chang, {Seung Ho} and Lee, {Sok Kyu} and Park, {Seong Je} and Jung, {Min Joong} and Han, {Jung Chul} and Wang, {In Soo} and Lim, {Kyu Hee} and Lee, {Jung Hwan} and Kim, {Ji Hwan} and Kang, {Won Kyung} and Kang, {Tai Kyu} and Byun, {Hee Su} and Noh, {Yu Jong} and Kwon, {Lee Hyun} and Koo, {Bon Kwang} and Cho, {Myung (Michael)} and Yang, {Joong Seob} and Koh, {Yo Hwan}",
year = "2009",
month = "9",
day = "25",
doi = "10.1109/ISSCC.2009.4977397",
language = "English (US)",
isbn = "1424434580",
series = "Digest of Technical Papers - IEEE International Solid-State Circuits Conference",
booktitle = "2009 IEEE International Solid-State Circuits Conference - Digest of Technical Papers, ISSCC 2009",

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Chang, SH, Lee, SK, Park, SJ, Jung, MJ, Han, JC, Wang, IS, Lim, KH, Lee, JH, Kim, JH, Kang, WK, Kang, TK, Byun, HS, Noh, YJ, Kwon, LH, Koo, BK, Cho, MM, Yang, JS & Koh, YH 2009, A 48nm 32Gb 8-level NAND Flash memory with 5.5MB/s program throughput. in 2009 IEEE International Solid-State Circuits Conference - Digest of Technical Papers, ISSCC 2009., 4977397, Digest of Technical Papers - IEEE International Solid-State Circuits Conference, 2009 IEEE International Solid-State Circuits Conference ISSCC 2009, San Francisco, CA, United States, 2/8/09. https://doi.org/10.1109/ISSCC.2009.4977397

A 48nm 32Gb 8-level NAND Flash memory with 5.5MB/s program throughput. / Chang, Seung Ho; Lee, Sok Kyu; Park, Seong Je; Jung, Min Joong; Han, Jung Chul; Wang, In Soo; Lim, Kyu Hee; Lee, Jung Hwan; Kim, Ji Hwan; Kang, Won Kyung; Kang, Tai Kyu; Byun, Hee Su; Noh, Yu Jong; Kwon, Lee Hyun; Koo, Bon Kwang; Cho, Myung (Michael); Yang, Joong Seob; Koh, Yo Hwan.

2009 IEEE International Solid-State Circuits Conference - Digest of Technical Papers, ISSCC 2009. 2009. 4977397 (Digest of Technical Papers - IEEE International Solid-State Circuits Conference).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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T1 - A 48nm 32Gb 8-level NAND Flash memory with 5.5MB/s program throughput

AU - Chang, Seung Ho

AU - Lee, Sok Kyu

AU - Park, Seong Je

AU - Jung, Min Joong

AU - Han, Jung Chul

AU - Wang, In Soo

AU - Lim, Kyu Hee

AU - Lee, Jung Hwan

AU - Kim, Ji Hwan

AU - Kang, Won Kyung

AU - Kang, Tai Kyu

AU - Byun, Hee Su

AU - Noh, Yu Jong

AU - Kwon, Lee Hyun

AU - Koo, Bon Kwang

AU - Cho, Myung (Michael)

AU - Yang, Joong Seob

AU - Koh, Yo Hwan

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M3 - Conference contribution

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SN - 1424434580

SN - 9781424434589

T3 - Digest of Technical Papers - IEEE International Solid-State Circuits Conference

BT - 2009 IEEE International Solid-State Circuits Conference - Digest of Technical Papers, ISSCC 2009

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Chang SH, Lee SK, Park SJ, Jung MJ, Han JC, Wang IS et al. A 48nm 32Gb 8-level NAND Flash memory with 5.5MB/s program throughput. In 2009 IEEE International Solid-State Circuits Conference - Digest of Technical Papers, ISSCC 2009. 2009. 4977397. (Digest of Technical Papers - IEEE International Solid-State Circuits Conference). https://doi.org/10.1109/ISSCC.2009.4977397