A comparative study of anneal efficiencies of deuterium and hydrogen in plasma-processed transistors

Sanjay Rangan, S Ashok, S. Krishnan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We have critically studied the thermal anneal recovery of plasma processing damage of submicron ULSI devices in hydrogen (H2) and deuterium (D2) ambients, and have observed improved passivation of interface states (Dit) with D2 anneals relative to H2. The charge pumping current (Icp) reduces by 15%, and the plasma-damaged devices annealed in D2 also exhibit improved recovery of transconductance Gm and threshold voltage Vt. An increase in hot carrier resistance of such plasma-damaged transistors annealed in D2 has been observed for the first time. The improvement of Gm and reduction in Icp are found to be monotonic functions of anneal temperature T, while Vt recovery is independent of T, suggesting oxide trapped charge as the likely source of threshold voltage shifts caused by processing.

Original languageEnglish (US)
Title of host publicationESSDERC 1998 - Proceedings of the 28th European Solid-State Device Research Conference
EditorsA. Touboul, Y. Danto, H. Grunbacher
PublisherIEEE Computer Society
Pages564-567
Number of pages4
ISBN (Electronic)2863322346
StatePublished - Jan 1 1998
Event28th European Solid-State Device Research Conference, ESSDERC 1998 - Bordeaux, France
Duration: Sep 8 1998Sep 10 1998

Other

Other28th European Solid-State Device Research Conference, ESSDERC 1998
CountryFrance
CityBordeaux
Period9/8/989/10/98

Fingerprint

Deuterium
Transistors
Threshold voltage
Plasmas
Recovery
Hydrogen
Plasma devices
Plasma applications
Hot carriers
Interface states
Transconductance
Passivation
Oxides
Processing
Temperature

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

Cite this

Rangan, S., Ashok, S., & Krishnan, S. (1998). A comparative study of anneal efficiencies of deuterium and hydrogen in plasma-processed transistors. In A. Touboul, Y. Danto, & H. Grunbacher (Eds.), ESSDERC 1998 - Proceedings of the 28th European Solid-State Device Research Conference (pp. 564-567). [1503614] IEEE Computer Society.
Rangan, Sanjay ; Ashok, S ; Krishnan, S. / A comparative study of anneal efficiencies of deuterium and hydrogen in plasma-processed transistors. ESSDERC 1998 - Proceedings of the 28th European Solid-State Device Research Conference. editor / A. Touboul ; Y. Danto ; H. Grunbacher. IEEE Computer Society, 1998. pp. 564-567
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Rangan, S, Ashok, S & Krishnan, S 1998, A comparative study of anneal efficiencies of deuterium and hydrogen in plasma-processed transistors. in A Touboul, Y Danto & H Grunbacher (eds), ESSDERC 1998 - Proceedings of the 28th European Solid-State Device Research Conference., 1503614, IEEE Computer Society, pp. 564-567, 28th European Solid-State Device Research Conference, ESSDERC 1998, Bordeaux, France, 9/8/98.

A comparative study of anneal efficiencies of deuterium and hydrogen in plasma-processed transistors. / Rangan, Sanjay; Ashok, S; Krishnan, S.

ESSDERC 1998 - Proceedings of the 28th European Solid-State Device Research Conference. ed. / A. Touboul; Y. Danto; H. Grunbacher. IEEE Computer Society, 1998. p. 564-567 1503614.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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N2 - We have critically studied the thermal anneal recovery of plasma processing damage of submicron ULSI devices in hydrogen (H2) and deuterium (D2) ambients, and have observed improved passivation of interface states (Dit) with D2 anneals relative to H2. The charge pumping current (Icp) reduces by 15%, and the plasma-damaged devices annealed in D2 also exhibit improved recovery of transconductance Gm and threshold voltage Vt. An increase in hot carrier resistance of such plasma-damaged transistors annealed in D2 has been observed for the first time. The improvement of Gm and reduction in Icp are found to be monotonic functions of anneal temperature T, while Vt recovery is independent of T, suggesting oxide trapped charge as the likely source of threshold voltage shifts caused by processing.

AB - We have critically studied the thermal anneal recovery of plasma processing damage of submicron ULSI devices in hydrogen (H2) and deuterium (D2) ambients, and have observed improved passivation of interface states (Dit) with D2 anneals relative to H2. The charge pumping current (Icp) reduces by 15%, and the plasma-damaged devices annealed in D2 also exhibit improved recovery of transconductance Gm and threshold voltage Vt. An increase in hot carrier resistance of such plasma-damaged transistors annealed in D2 has been observed for the first time. The improvement of Gm and reduction in Icp are found to be monotonic functions of anneal temperature T, while Vt recovery is independent of T, suggesting oxide trapped charge as the likely source of threshold voltage shifts caused by processing.

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Rangan S, Ashok S, Krishnan S. A comparative study of anneal efficiencies of deuterium and hydrogen in plasma-processed transistors. In Touboul A, Danto Y, Grunbacher H, editors, ESSDERC 1998 - Proceedings of the 28th European Solid-State Device Research Conference. IEEE Computer Society. 1998. p. 564-567. 1503614