A comparative study of effects of SiNx deposition method on AlGaN/GaN heterostructure field-effect transistors

Masataka Higashiwaki, Zhen Chen, Rongming Chu, Yi Pei, Stacia Keller, Umesh K. Mishra, Nobumitsu Hirose, Toshiaki Matsui, Takashi Mimura

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Abstract

The effects of thin SiNx deposition on AlGaN/GaN heterostructure field-effect transistors were systematically studied by comparing their electrical and device characteristics. Two aspects of the thin SiNx film deposition were investigated: (i) the increase in two-dimensional electron gas (2DEG) density at the heterointerface and (ii) its capability as a gate insulating layer. Three different SiNx deposition methods were studied: catalytic chemical vapor deposition (Cat-CVD), metalorganic chemical vapor deposition (MOCVD), and plasma enhanced chemical vapor deposition (PECVD). A large increase in 2DEG density was obtained after SiNx deposition for all methods. The devices with MOCVD SiNx gate insulator showed a larger gate leakage current than those with the Cat-CVD and PECVD SiNx, implying that a thinning of the AlGaN surface barrier occurred due to Si diffusion into the AlGaN barrier during the high-temperature MOCVD process.

Original languageEnglish (US)
Article number053513
JournalApplied Physics Letters
Volume94
Issue number5
DOIs
StatePublished - Feb 16 2009

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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