A comparative study of effects of SiNx deposition method on AlGaN/GaN heterostructure field-effect transistors

Masataka Higashiwaki, Zhen Chen, Rongming Chu, Yi Pei, Stacia Keller, Umesh K. Mishra, Nobumitsu Hirose, Toshiaki Matsui, Takashi Mimura

Research output: Contribution to journalArticle

33 Citations (Scopus)

Abstract

The effects of thin SiNx deposition on AlGaN/GaN heterostructure field-effect transistors were systematically studied by comparing their electrical and device characteristics. Two aspects of the thin SiNx film deposition were investigated: (i) the increase in two-dimensional electron gas (2DEG) density at the heterointerface and (ii) its capability as a gate insulating layer. Three different SiNx deposition methods were studied: catalytic chemical vapor deposition (Cat-CVD), metalorganic chemical vapor deposition (MOCVD), and plasma enhanced chemical vapor deposition (PECVD). A large increase in 2DEG density was obtained after SiNx deposition for all methods. The devices with MOCVD SiNx gate insulator showed a larger gate leakage current than those with the Cat-CVD and PECVD SiNx, implying that a thinning of the AlGaN surface barrier occurred due to Si diffusion into the AlGaN barrier during the high-temperature MOCVD process.

Original languageEnglish (US)
Article number053513
JournalApplied Physics Letters
Volume94
Issue number5
DOIs
StatePublished - Feb 16 2009

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field effect transistors
vapor deposition
metalorganic chemical vapor deposition
gas density
electron gas
leakage
insulators
thin films

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Higashiwaki, Masataka ; Chen, Zhen ; Chu, Rongming ; Pei, Yi ; Keller, Stacia ; Mishra, Umesh K. ; Hirose, Nobumitsu ; Matsui, Toshiaki ; Mimura, Takashi. / A comparative study of effects of SiNx deposition method on AlGaN/GaN heterostructure field-effect transistors. In: Applied Physics Letters. 2009 ; Vol. 94, No. 5.
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abstract = "The effects of thin SiNx deposition on AlGaN/GaN heterostructure field-effect transistors were systematically studied by comparing their electrical and device characteristics. Two aspects of the thin SiNx film deposition were investigated: (i) the increase in two-dimensional electron gas (2DEG) density at the heterointerface and (ii) its capability as a gate insulating layer. Three different SiNx deposition methods were studied: catalytic chemical vapor deposition (Cat-CVD), metalorganic chemical vapor deposition (MOCVD), and plasma enhanced chemical vapor deposition (PECVD). A large increase in 2DEG density was obtained after SiNx deposition for all methods. The devices with MOCVD SiNx gate insulator showed a larger gate leakage current than those with the Cat-CVD and PECVD SiNx, implying that a thinning of the AlGaN surface barrier occurred due to Si diffusion into the AlGaN barrier during the high-temperature MOCVD process.",
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Higashiwaki, M, Chen, Z, Chu, R, Pei, Y, Keller, S, Mishra, UK, Hirose, N, Matsui, T & Mimura, T 2009, 'A comparative study of effects of SiNx deposition method on AlGaN/GaN heterostructure field-effect transistors', Applied Physics Letters, vol. 94, no. 5, 053513. https://doi.org/10.1063/1.3079798

A comparative study of effects of SiNx deposition method on AlGaN/GaN heterostructure field-effect transistors. / Higashiwaki, Masataka; Chen, Zhen; Chu, Rongming; Pei, Yi; Keller, Stacia; Mishra, Umesh K.; Hirose, Nobumitsu; Matsui, Toshiaki; Mimura, Takashi.

In: Applied Physics Letters, Vol. 94, No. 5, 053513, 16.02.2009.

Research output: Contribution to journalArticle

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AU - Higashiwaki, Masataka

AU - Chen, Zhen

AU - Chu, Rongming

AU - Pei, Yi

AU - Keller, Stacia

AU - Mishra, Umesh K.

AU - Hirose, Nobumitsu

AU - Matsui, Toshiaki

AU - Mimura, Takashi

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N2 - The effects of thin SiNx deposition on AlGaN/GaN heterostructure field-effect transistors were systematically studied by comparing their electrical and device characteristics. Two aspects of the thin SiNx film deposition were investigated: (i) the increase in two-dimensional electron gas (2DEG) density at the heterointerface and (ii) its capability as a gate insulating layer. Three different SiNx deposition methods were studied: catalytic chemical vapor deposition (Cat-CVD), metalorganic chemical vapor deposition (MOCVD), and plasma enhanced chemical vapor deposition (PECVD). A large increase in 2DEG density was obtained after SiNx deposition for all methods. The devices with MOCVD SiNx gate insulator showed a larger gate leakage current than those with the Cat-CVD and PECVD SiNx, implying that a thinning of the AlGaN surface barrier occurred due to Si diffusion into the AlGaN barrier during the high-temperature MOCVD process.

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