A comparative study of SiN deposition methods for millimeter-wave AlGaN/GaN HFETs

Masataka Higashiwaki, Zhen Chen, Yi Pei, Rongming Chu, Stacia Keller, Nobumitsu Hirose, Takashi Mimura, Toshiaki Matsui, Umesh K. Mishra

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)
Original languageEnglish (US)
Title of host publication66th DRC Device Research Conference Digest, DRC 2008
Pages207-208
Number of pages2
DOIs
StatePublished - Dec 1 2008
Event66th DRC Device Research Conference Digest, DRC 2008 - Santa Barbara, CA, United States
Duration: Jun 23 2008Jun 25 2008

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770

Other

Other66th DRC Device Research Conference Digest, DRC 2008
CountryUnited States
CitySanta Barbara, CA
Period6/23/086/25/08

Fingerprint

Millimeter waves

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Higashiwaki, M., Chen, Z., Pei, Y., Chu, R., Keller, S., Hirose, N., ... Mishra, U. K. (2008). A comparative study of SiN deposition methods for millimeter-wave AlGaN/GaN HFETs. In 66th DRC Device Research Conference Digest, DRC 2008 (pp. 207-208). [4800805] (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2008.4800805
Higashiwaki, Masataka ; Chen, Zhen ; Pei, Yi ; Chu, Rongming ; Keller, Stacia ; Hirose, Nobumitsu ; Mimura, Takashi ; Matsui, Toshiaki ; Mishra, Umesh K. / A comparative study of SiN deposition methods for millimeter-wave AlGaN/GaN HFETs. 66th DRC Device Research Conference Digest, DRC 2008. 2008. pp. 207-208 (Device Research Conference - Conference Digest, DRC).
@inproceedings{192d4e7f87c24a7fbb4ae5024b96d878,
title = "A comparative study of SiN deposition methods for millimeter-wave AlGaN/GaN HFETs",
author = "Masataka Higashiwaki and Zhen Chen and Yi Pei and Rongming Chu and Stacia Keller and Nobumitsu Hirose and Takashi Mimura and Toshiaki Matsui and Mishra, {Umesh K.}",
year = "2008",
month = "12",
day = "1",
doi = "10.1109/DRC.2008.4800805",
language = "English (US)",
isbn = "9781424419425",
series = "Device Research Conference - Conference Digest, DRC",
pages = "207--208",
booktitle = "66th DRC Device Research Conference Digest, DRC 2008",

}

Higashiwaki, M, Chen, Z, Pei, Y, Chu, R, Keller, S, Hirose, N, Mimura, T, Matsui, T & Mishra, UK 2008, A comparative study of SiN deposition methods for millimeter-wave AlGaN/GaN HFETs. in 66th DRC Device Research Conference Digest, DRC 2008., 4800805, Device Research Conference - Conference Digest, DRC, pp. 207-208, 66th DRC Device Research Conference Digest, DRC 2008, Santa Barbara, CA, United States, 6/23/08. https://doi.org/10.1109/DRC.2008.4800805

A comparative study of SiN deposition methods for millimeter-wave AlGaN/GaN HFETs. / Higashiwaki, Masataka; Chen, Zhen; Pei, Yi; Chu, Rongming; Keller, Stacia; Hirose, Nobumitsu; Mimura, Takashi; Matsui, Toshiaki; Mishra, Umesh K.

66th DRC Device Research Conference Digest, DRC 2008. 2008. p. 207-208 4800805 (Device Research Conference - Conference Digest, DRC).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - A comparative study of SiN deposition methods for millimeter-wave AlGaN/GaN HFETs

AU - Higashiwaki, Masataka

AU - Chen, Zhen

AU - Pei, Yi

AU - Chu, Rongming

AU - Keller, Stacia

AU - Hirose, Nobumitsu

AU - Mimura, Takashi

AU - Matsui, Toshiaki

AU - Mishra, Umesh K.

PY - 2008/12/1

Y1 - 2008/12/1

UR - http://www.scopus.com/inward/record.url?scp=64849091403&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=64849091403&partnerID=8YFLogxK

U2 - 10.1109/DRC.2008.4800805

DO - 10.1109/DRC.2008.4800805

M3 - Conference contribution

AN - SCOPUS:64849091403

SN - 9781424419425

T3 - Device Research Conference - Conference Digest, DRC

SP - 207

EP - 208

BT - 66th DRC Device Research Conference Digest, DRC 2008

ER -

Higashiwaki M, Chen Z, Pei Y, Chu R, Keller S, Hirose N et al. A comparative study of SiN deposition methods for millimeter-wave AlGaN/GaN HFETs. In 66th DRC Device Research Conference Digest, DRC 2008. 2008. p. 207-208. 4800805. (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2008.4800805