A comparison between plasma charging-damage and inductive-damage: Damage response to Fowler-Nordheim stress

A. Salah, Osama O. Awadelkarim, J. Werking, G. Bersuker, Y. D. Chan

Research output: Contribution to journalArticle

Abstract

This paper reports on the results of a study performed to compare the effects of charging damage and inductive damage to 0.5 μm n-channel MOSFETs arising from plasma etching at the gate-definition etch and metal-1 etch levels, respectively. The MOSFETs were fabricated on 200 mm p/p+ silicon wafers using a full CMOS process. The gate-definition etch step was performed using a chlorine-based chemistry and the metal etch step was done using a BCl3/N2/Cl2 plasma. It is found that charging damage is electrically inactive after the full CMOS process flow; however, it is electrically activated by Fowler-Nordheim (F-N) stress when charging damage is clearly seen to correlate with the area of charging antenna in the device. Inductive damage, on the other hand, is seen to impact transistor parameters directly after the CMOS process and before the application of F-N stress. This is attributed to distinctly different mechanisms that are responsible for the creation of the two types of damage: charging damage arises from a dc current stress, whereas inductive damage is suggested to arise from ac current stress.

Original languageEnglish (US)
Pages (from-to)1701-1707
Number of pages7
JournalSolid-State Electronics
Volume39
Issue number12
DOIs
StatePublished - Dec 1 1996

Fingerprint

charging
damage
Plasmas
Metals
CMOS
Plasma etching
Chlorine
Silicon wafers
Transistors
field effect transistors
Antennas
plasma etching
metals
chlorine
transistors
antennas
wafers
chemistry
silicon

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this

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abstract = "This paper reports on the results of a study performed to compare the effects of charging damage and inductive damage to 0.5 μm n-channel MOSFETs arising from plasma etching at the gate-definition etch and metal-1 etch levels, respectively. The MOSFETs were fabricated on 200 mm p/p+ silicon wafers using a full CMOS process. The gate-definition etch step was performed using a chlorine-based chemistry and the metal etch step was done using a BCl3/N2/Cl2 plasma. It is found that charging damage is electrically inactive after the full CMOS process flow; however, it is electrically activated by Fowler-Nordheim (F-N) stress when charging damage is clearly seen to correlate with the area of charging antenna in the device. Inductive damage, on the other hand, is seen to impact transistor parameters directly after the CMOS process and before the application of F-N stress. This is attributed to distinctly different mechanisms that are responsible for the creation of the two types of damage: charging damage arises from a dc current stress, whereas inductive damage is suggested to arise from ac current stress.",
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A comparison between plasma charging-damage and inductive-damage : Damage response to Fowler-Nordheim stress. / Salah, A.; Awadelkarim, Osama O.; Werking, J.; Bersuker, G.; Chan, Y. D.

In: Solid-State Electronics, Vol. 39, No. 12, 01.12.1996, p. 1701-1707.

Research output: Contribution to journalArticle

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T1 - A comparison between plasma charging-damage and inductive-damage

T2 - Damage response to Fowler-Nordheim stress

AU - Salah, A.

AU - Awadelkarim, Osama O.

AU - Werking, J.

AU - Bersuker, G.

AU - Chan, Y. D.

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AB - This paper reports on the results of a study performed to compare the effects of charging damage and inductive damage to 0.5 μm n-channel MOSFETs arising from plasma etching at the gate-definition etch and metal-1 etch levels, respectively. The MOSFETs were fabricated on 200 mm p/p+ silicon wafers using a full CMOS process. The gate-definition etch step was performed using a chlorine-based chemistry and the metal etch step was done using a BCl3/N2/Cl2 plasma. It is found that charging damage is electrically inactive after the full CMOS process flow; however, it is electrically activated by Fowler-Nordheim (F-N) stress when charging damage is clearly seen to correlate with the area of charging antenna in the device. Inductive damage, on the other hand, is seen to impact transistor parameters directly after the CMOS process and before the application of F-N stress. This is attributed to distinctly different mechanisms that are responsible for the creation of the two types of damage: charging damage arises from a dc current stress, whereas inductive damage is suggested to arise from ac current stress.

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