We use electron spin resonance to compare the effects of electron injection and gamma radiation on MOS devices. Electron injection is similar to ionizing radiation in that in both cases Pb centers are generated at the Si/SiO2 interface. However, the effects are not identical; although ionizing radiation creates E’ centers in the SiO2, we are unable to observe any E’ generation in oxides subjected to electron injection.
All Science Journal Classification (ASJC) codes
- Nuclear and High Energy Physics
- Nuclear Energy and Engineering
- Electrical and Electronic Engineering