A Comparison of Ionizing Radiation and Hot Electron Effects in MOS Structures

R. E. Mikawa, Patrick M. Lenahan

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

We use electron spin resonance to compare the effects of electron injection and gamma radiation on MOS devices. Electron injection is similar to ionizing radiation in that in both cases Pb centers are generated at the Si/SiO2 interface. However, the effects are not identical; although ionizing radiation creates E’ centers in the SiO2, we are unable to observe any E’ generation in oxides subjected to electron injection.

Original languageEnglish (US)
Pages (from-to)1573-1575
Number of pages3
JournalIEEE Transactions on Nuclear Science
Volume31
Issue number6
DOIs
StatePublished - Jan 1 1984

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Electron injection
Hot electrons
Ionizing radiation
hot electrons
ionizing radiation
injection
MOS devices
electrons
Gamma rays
Paramagnetic resonance
electron paramagnetic resonance
gamma rays
Oxides
oxides
radiation

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

Cite this

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A Comparison of Ionizing Radiation and Hot Electron Effects in MOS Structures. / Mikawa, R. E.; Lenahan, Patrick M.

In: IEEE Transactions on Nuclear Science, Vol. 31, No. 6, 01.01.1984, p. 1573-1575.

Research output: Contribution to journalArticle

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