TY - GEN
T1 - A defect-aware approach for mapping reconfigurable Single-Electron Transistor arrays
AU - Huang, Ching Yi
AU - Liu, Chian Wei
AU - Wang, Chun Yao
AU - Chen, Yung Chih
AU - Datta, Suman
AU - Narayanan, Vijaykrishnan
N1 - Publisher Copyright:
© 2015 IEEE.
PY - 2015/3/11
Y1 - 2015/3/11
N2 - Single-Electron Transistor (SET) at room temperature has been demonstrated as a promising device for extending Moore's law due to its ultra low power consumption. However, early realizations of SET array lacked variability and reliability due to their fixed architectures and high defect rates of nanowire segments. Therefore, a reconfigurable version of SET was proposed to deal with these issues. Recently, several automated mapping approaches were proposed for area minimization of reconfigurable SET arrays. However, to the best of our knowledge, no mapping approaches that consider the existence of defective nanowire segments were proposed. Thus, this paper presents the first defect-aware approach for mapping reconfigurable SET arrays. The experimental results show that our approach can successfully map the SET arrays with 20% width overhead on average in the presence of 5000 ppm defects.
AB - Single-Electron Transistor (SET) at room temperature has been demonstrated as a promising device for extending Moore's law due to its ultra low power consumption. However, early realizations of SET array lacked variability and reliability due to their fixed architectures and high defect rates of nanowire segments. Therefore, a reconfigurable version of SET was proposed to deal with these issues. Recently, several automated mapping approaches were proposed for area minimization of reconfigurable SET arrays. However, to the best of our knowledge, no mapping approaches that consider the existence of defective nanowire segments were proposed. Thus, this paper presents the first defect-aware approach for mapping reconfigurable SET arrays. The experimental results show that our approach can successfully map the SET arrays with 20% width overhead on average in the presence of 5000 ppm defects.
UR - http://www.scopus.com/inward/record.url?scp=84926486752&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84926486752&partnerID=8YFLogxK
U2 - 10.1109/ASPDAC.2015.7058991
DO - 10.1109/ASPDAC.2015.7058991
M3 - Conference contribution
AN - SCOPUS:84926486752
T3 - 20th Asia and South Pacific Design Automation Conference, ASP-DAC 2015
SP - 118
EP - 123
BT - 20th Asia and South Pacific Design Automation Conference, ASP-DAC 2015
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2015 20th Asia and South Pacific Design Automation Conference, ASP-DAC 2015
Y2 - 19 January 2015 through 22 January 2015
ER -